Unconventional antiferromagnetic correlations of the doped Haldane gapsystem Y 2 BaNi 1 - x Zn x O 5

We make a new proposal to describe the very low temperature susceptibility of the doped Haldane gap compound Y₂BaNi_1-xZn_xO₅. We propose a new mean field model relevant for this compound. The ground state of this mean field model is unconventional because antiferromagnetism coexists with random dimers. We present new susceptibility experiments at very low temperature. We obtain a Curie-Weiss susceptibility χ( T ) ∼ C /(Θ + T ) as expected for antiferromagnetic correlations but we do not obtain a direct signature of antiferromagnetic long range order. We explain how to obtain the “impurity” susceptibility ( T ) by subtracting the Haldane gap contribution to the total susceptibility. In the temperature range [1 K, 300 K] the experimental data are well fitted by T ( T ) = C _imp 1 + T _imp / T . In the temperature range [100 mK, 1 K] the experimental data are well fitted by T ( T ) = A ln( T / T _c ), where T _c increases with x. This fit suggests the existence of a finite Néel temperature which is however too small to be probed directly in our experiments. We also obtain a maximum in the temperature dependence of the ac-susceptibility ( T ) which suggests the existence of antiferromagnetic correlations at very low temperature. Received 17 July 2001     

Application of the stabilization method to interacting resonances

The stabilization method is applied to the case of interacting resonances in the photo-dissociation of van der Waals clusters composed by a rare gas atom bound to a dihalogen molecule. The study of an illustrative two-dimensional model consisting in a T-shaped NeI₂ molecule shows the adequacy of the method whenever the projection of the stabilization wave functions on the assumed prepared initial state is accounted for. The agreement of the fragmentation cross-sections with some previous results using the effective resolvent method and accurate close-coupling calculations is excellent. The method reveals its utility as a complementary tool since allows, through the analysis of the stabilization wave function in terms of zero-order levels, a precise characterization of the resonant states involved. Received 5 April 2002 / Received in final form 24 May 2002 Published online 19 July 2002     

Geometric Algebra in Linear Algebra and Geometry

This article explores the use of geometric algebra in linear and multilinear algebra, and in affine, projective and conformal geometries. Our principal objective is to show how the rich algebraic tools of geometric algebra are fully compatible with and augment the more traditional tools of matrix algebra. The novel concept of an h-twistor makes possible a simple new proof of the striking relationship between conformal transformations in a pseudo-Euclidean space to isometries in a pseudo-Euclidean space of two higher dimensions. The utility of the h-twistor concept, which is a generalization of the idea of a Penrose twistor to a pseudo-Euclidean space of arbitrary signature, is amply demonstrated in a new treatment of the Schwarzian derivative.     

Evolution equations for shapes and geometries

The first object of this paper is to introduce a new evolution equation for the characteristic function of the boundary Γ of a Lipschitzian domain Ω in the N-dimensional Euclidean space under the influence of a smooth time-dependent velocity field. The originality of this equation is that the evolution takes place in an L^p-space with respect to the (N − 1)-Hausdorff measure. A second more speculative objective is to discuss how that equation can be relaxed to rougher velocity fields via some weak formulation. A candidate is presented and some of the technical difficulties and open issues are discussed. Continuity results in several metric topologies are also presented. The paper also specializes the results on the evolution of the oriented distance function to initial sets with zero N-dimensional Lebesgue measure.     

Validating DEA as a ranking tool: An application of DEA to assess performance in higher education

There is a general interest in ranking schemes applied to complex entities described by multiple attributes. Published rankings for universities are in great demand but are also highly controversial. We compare two classification and ranking schemes involving universities; one from a published report, ‘Top American Research Universities’ by the University of Florida's TheCenter and the other using DEA. Both approaches use the same data and model. We compare the two methods and discover important equivalences. We conclude that the critical aspect in classification and ranking is the model. This suggests that DEA is a suitable tool for these types of studies.     

Performance analysis of 1300 nm SLEDs – impact of temperature and length scaling

The impact of self-heating and cavity length on the spectral emission properties of SLEDs is investigated using a state-of-the-art simulation tool. Simulated data are compared to measurements for two InP-based benchmark devices operating around 1300 nm, and excellent agreement is achieved in either case.     

Technical efficiency,managerial efficiency and objective-setting in the educational system: an international comparison

This study uses data envelopment analysis to analyse the efficiency of educational systems in 31 countries. This type of evaluation is of interest both when formulating a model for analysis and when applying such a model empirically. The efficiency of an educational system must take into account the students' economic and social background, as this is an environmental factor that decisively influences their performance. This is a highly important aspect and so we propose a specific evaluative process for it. Secondly, we evaluate the efficiency of educational systems in different countries, an analysis that has few forerunners since the majority of previous research has focused on analysing a single country. The results suggest that, in general, the most efficient management of educational systems can be found in those countries with a Communist past. They also suggest that there is a series of developed countries, which, judging by the results obtained, could increase their students' performance with even fewer resources than those currently allocated to their educational systems.     

Thickness dependence of the magnetic anisotropy of Fe layers separated by Al

Magnetic multilayers of ⁵⁷Fe with nominal thickness, T _nom, between 0.4 and 1.0 nm separated by 3.0 nm Al spacer layers were prepared by alternate deposition of the constituents in high vacuum. The samples were investigated at 4.2 K in external magnetic field. A fraction of Fe atoms corresponding to about 0.3 nm equivalent Fe-thickness was found to mix into the Al spacer. The extremely strong magnetic anisotropy observed for T _nom < 0.8 nm is attributed to Fe layers of approximately two atomic planes thick. The anisotropy decreases considerably after the building up of the third Fe atomic layer starts at T _nom = 0.8 nm, but full saturation was not achieved even for T _nom = 1 nm and 3 T magnetic field applied perpendicularly to the sample plane.