Measurement of the K α to L α and K β to L β intensity ratios of seven elements in the atomic number range 52≤ Z ≤62 using photoionization at 59.5 keV1

The Kα to Lα and Kβ to Lβ intensity ratios of seven elements have been measured following photoionization at 59.5 keV by using a Si (Li) detector (FWHM=155 eV at 5.96 keV). The intensity ratios were determined by measuring K and L x-rays emitted from a standard target of a given element. The theoretical values of the Kα to Lα and Kβ to Lβ intensity ratios were calculated using theoretically tabulated values of shell/subshell photoionization cross sections, fluorescence yields, Coster-Kronig transition probabilities, and radiative decay rates for ηKLi≠ and ηKLi=0. The measured values are in good agreement with theoretical results. From Optika i Spektroskopiya, Vol. 97, No. 2, 2004, pp. 186–189. Original English Text Copyright ? 2004 by A. Kü?ük?nder, S?ğüt, E. Kü?ük?nder, Büyükkasap. This article was submitted by the authors in English.     

Hysteresis and Eddy-current Relaxation in SiFe Materials

The rate-dependent effects in metallic ferromagnetic materials with magnetization processes attributed to domain-walls motion were studied. The experimental method for eddy-current relaxation time determination was proposed. Some discrepancies between the data and theoretical predictions were observed and discussed. The origin of these discrepancies is accounted for by the decrease of viscous-type relaxation process as the rate of change of averaged magnetization is approaching zero.     

WZW–Poisson manifolds

We observe that a term of the WZW-type can be added to the Lagrangian of the Poisson σ-model in such a way that the algebra of the first class constraints remains closed. This leads to a natural generalization of the concept of Poisson geometry. The resulting “WZW–Poisson” manifold M is characterized by a bivector Π and by a closed three-form H such that 1/2[Π,Π]_Schouten=H,ΠΠΠ.     

Recent Developments in Synchrotron Mössbauer Reflectometry

Hyperfine Interactions - Synchrotron Mössbauer Reflectometry (SMR), the grazing incidence nuclear resonant scattering of synchrotron radiation, can be applied to perform depth-selective phase...     

Projectivep-algebras

Presented by R. Freese.     

Multiple-scattering-theory analysis of XANES spectra of SO2 adsorbed on Cu(100)

The sulphur K-edge x-ray absorption spectra of SO₂ multilayer and of SO₂ submonolayer adsorbed on Cu(100) are analysed. It is found that the dominant spectral features are of a molecular origin. The results support earlier findings that the SO₂ molecule stands perpendicular to the surface. Use of non-selfconsistent potentials does not lead to a good quantitative agreement between theory and experiment.     

A Ramsey‐type result for the hypercube

We prove that for every fixed k and ? ≥ 5 and for sufficiently large n, every edge coloring of the hypercube Q_n with k colors contains a monochromatic cycle of length 2 ?. This answers an open question of Chung. Our techniques provide also a characterization of all subgraphs H of the hypercube which are Ramsey, that is, have the property that for every k, any k‐edge coloring of a sufficiently large Q_n contains a monochromatic copy of H. © 2006 Wiley Periodicals, Inc. J Graph Theory 53: 196–208, 2006     

Composition spread metal thin film fabrication technique based on ion beam sputter deposition

A composition spread metal thin film fabrication technique based on ion beam sputter deposition method was developed. The technique enables us to fabricate any desired part or a complete binary/ternary composition spread metal thin films onto a single substrate by sequentially sputtering different target materials. Composition spread metal thin films can be deposited directly on a dielectric film in patterned electrode shape for C-V and I-V measurements. The system could be especially useful in the search for new multi-component metal gate materials.     

Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

A binary alloy Schottky barrier diode on zinc oxide (ZnO) was developed using the combinatorial ion beam-assisted deposition system. The compositional fraction of the binary alloy was continuously varied using the composition-spread technique, to control the Schottky barrier height. After metal deposition, patterned Schottky diodes were fabricated on a ZnO single-crystal substrate. Pt-Ru alloy was selected from the work function viewpoint. Our experiments showed that the compositional fraction of the Schottky binary alloys changed continuously as designed and the Schottky barrier heights measured by current-voltage (I-V) measurements increased with increasing Pt content. Maximum barrier height difference for ZnO was 137 meV. Using ion beam deposition in parallel with the combinatorial system showed that the Schottky barrier heights for ZnO can be controlled by binary metal alloying.