Macroscale and microscale evolutions of mechanically alloyed FeZn systems

The present work aims to correlate, in time, macroscale and microscale phenomenological evolutions of the microstructure of Fe and FeZn alloys processed by mechanical milling (MM) and alloying (MA), respectively. Powders were characterized for particle size distribution (PSD), particle morphology (optical microscopy, OM, scanning electron microscopy, SEM), microhardness, crystallite size, differential scanning calometry (DSC) and transmission electron microscopy (TEM). Two macroscopic regimes of PSD behavior were distinguished: the first one dominated by the cold welding process; and, the other where both fracture and agglomeration play a significant role. Solid solubilization of Zn on bcc Fe was found to reduce the final microhardness as well as increase the lattice parameter and is very well predicted by Miedema's thermodynamical approach. Microhardness and solid solution formation kinetics were correlated in time and both could be precisely described by a logistic function. After 5 h of planetary milling, microhardness and the lattice parameter become stable as well as the PSD and particle morphology, indicating that the system has already reached steady state. Indeed, this condition can be monitored by both macroscopic and microscopic parameters. Prior to an homogeneous powder, DSC results suggest an endothermic solid-state amorphization reaction for samples processed for up to 1 h as a result of the formation of clean Fe/Zn interfaces during MA.     

Structural characterization of SiGe nanoclusters formed by rapid thermal annealing

This work presents the structural characterization of nanoclusters formed from a-Si:H/Ge heterostructures processed by rapid thermal annealing (RTA) at 1000 °C for annealing times varying between 30 s and 70 s. The a-Si:H layers were grown on electron cyclotron resonance (ECR) using SiH₄ and Ar precursor gases. The Ge layer was grown in an e-beam evaporation system. The structural characterizations were performed by high-resolution X-ray diffractometer (HRXRD) on grazing incidence X-ray reflection mode (GIXRR) and micro-Raman measurements. The average grain size, Ge concentration (x_Ge) and strain were estimated from Lorentzian GIXRR peak fit. The average grain size varied from 3 nm to 7.5 nm and decreased with annealing time. The x_Ge increase with annealing time and varied from 8% to 19%, approximately. The strain calculated for (1 1 1), (2 2 0) and (3 1 1) peaks at 40 s, 50 s, 60 s and 70 s annealing time suggest the geometrical changes in nanoclusters according to process time.     

Using environmental scanning electron microscopy (ESEM) as a quantitative method to analyse the attachment of Giardia duodenalis to epithelial cells

Giardia duodenalis is a human parasite that colonises the small intestine. In some studies, it may be necessary to estimate the parasite-host adhesion index. When working in vitro, it is very difficult to determine the relative number of parasites adhered to intestinal cells because parasites might be removed from enterocytes during specimen preparation. We have encountered such difficulties with sample analyses when using light and conventional scanning electron microscopy, including the loss of adherent cells during the processing steps. In this study, we showed that environmental scanning electron microscopy (ESEM), which allows the examination of specimens at normal atmospheric pressure or in very low vacuum without any previous treatment, can be used effectively in quantitative studies of the parasite-host relationship.     

High precision analysis of finlines on semiconductor substrate

In this study, the effect of the metallization thickness in finlines on semiconcuctor substrate is researched. The propagation parameters are computed to measure the inluence of the metallization. The theory and numerical results are presented to the propagation constant and characteristic impedance of the bilateral and unilateral finlines. The full wave analysis of the transverse transmission line — TTL method is used to determine the electromagnetic fields of the structure in Fourier transform domain — FTD. Applying the suitable boundary conditions, the moment method and expanding the fields in a set of suitable bases functions, a homogeneous matrix system is obtained and the propagation constant is computed. The characteristic impedance is obtained using the relation of the voltage in the slot and the transmitted power by the structure.Computational programs are developed to obtain numerical results to the propagation parameters composed by the propagation constant and characteristic impedance.This work received financial support by CAPES and CNPq.