Monotone additive matrix transformations

We investigate additive transformations on the space of real or complex matrices that are monotone with respect to any admissible partial order relation. A complete characterization of these transformations is obtained. In the real case, we show that such transformations are linear and that all nonzero monotone transformations are bijective. As a corollary, we characterize all additive transformations that are monotone with respect to certain classical matrix order relations, in particular, with respect to the Drazin order, left and right *-orders, and the diamond order.     

Decompositions of continuity and complete continuity

We introduce the notions of δ-t-sets, δ_β-t-sets, δ-B-continuity and δ_β -B-continuity and obtain decompositions of continuity and complete continuity.     

Critical dynamics of the Potts model in several dimensionalities

We study critical dynamics of general q-state Potts models on d-dimensional hypercubic lattices. The master equation is formulated according to a theory recently presented by the author. A simple bond moving technique, followed by decimation, is used to obtain the dynamical exponents. Although this approximation yields poor results for the static exponents, the dynamic behaviour is closer to Monte Carlo simulations. We compare our results with those obtained with a different formulation of dynamics. A final discussion is included.     

Characteristics of thermoradiative destruction of BaS2O6·2H2O

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 613–618, October, 1991.     

Excess noise peaks in porous silicon-based diode structures

Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer formed on heavily boron-doped silicon single crystals are studied. Peaks of excessive noise are observed at frequencies of ～1 MHz, at which single-electron oscillations should be expected. The peak noise power is found to increase with current according to the ～2.5 power law and, at a current density of 0.15 A/cm², to exceed the noise power of the receiver by three to four orders of magnitude. The complex shape of the noise spectrum and its extension to the higher frequency region with increasing current are explained by the three-dimensionality of the system of nanometer-sized silicon grains embedded in insulating silicon dioxide of porous silicon.