庆大霉素与水溶性CdTe量子点的荧光共振能量转移作用

以巯基丙酸(mercaptopropionic acid,MPA)为稳定剂合成水溶性CdTe最子点(quantum dots,QDs),以CdTe QDs作为能量供体.庆大霉素(Gentamycin,GT)作为能垦受体,建立了荧光共振能量转移(fluorescence resonance energy transfer,FRET)体系.在690 nm处可见发射峰,半峰宽约10 nm,在一定范围内荧光强度与GT的含量旱线性关系,线性范围为2～20 mg·L-1,相关系数r=0.986 7.优化了不同的激发波长、pH、离子强度、时间和温度等凼素对反应的影响,并应用傅里叶变换红外光谱(Fourier transform infrared spectroscopy,FTIR)和高效液相色谱(high-performance liquid chromatography,HPLC)分别表征了化学结构和相对专一性.结果表明巯基丙酸的巯基中S原子和羧基中氧原子与纳米微粒表面的富Cd离子发生了配位作用,CdTe QDs与GT的耦合主要是通过量子点周围巯基丙酸羧基(-COOH)中的氧原子与GT的胺基(-NH2)形成分子问氧键实现的;GT与CdTe QDs的结合率为0.35:1.研究表明GT可以作为检测CdTe QDs标记牛血清白蛋白(bovine serum albumin,BSA)的荧光增敏剂,荧光强度值增强6倍,应用前景广阔.     

ICP等离子体鞘层附近区域发光光谱特性分析

为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.     

超导材料的各向异性特征与超导转变温度T_c

在本文中,以电声子机制超导电性理论为基础,用电负性均衡原理研究了由于超导材料的各向异性引起的电子态密度分布的不均匀性,晶格稳定性的差异性及超导材料中元素成键特征对超导转变温度影响的特征,提出了在各向异性的超导材料中电声子机制可以产生高的超导转变温度Tc.     

Precision position measurement of single atom

Atom localization in a five-level atomic system under the effect of three driving fields and one standing wave field is suggested. A spontaneously emitted photon from the proposed system is measured in a detector. Precision position measurement of an atom is controlled via phase and vacuum field detuning without considering the parity violation.     

Primary result of ~(236)U measurement with accelerator mass spectrometry at CIAE

The rare isotope 236U has a half-life of 2.342(3)×107 years,and is produced principally by thermal neutron capture on 235U.The isotopic atom ratio of 236U/238U depends on the integral thermal neutron flux received by the material of interest.236U is potentially useful as a fingerprint for indicating the presence of neutron-irradiated uranium usually originating from nuclear activity.By extracting negative molecular ion UO- from the uranium oxide target,simulating the 236U16O- beam transport with 238U16O- an...     

First experimental research of the bunch compressor at CAEP

Magnetic bunch compressor is one of the key technologies on the path to next generation accelerator driven facilities. In this paper we report the design principles and the first experimental research of the bunch compressor developed at Chinese Academy of Engineering Physics （CAEP）. The length of the bunch after compressor is found to be about 0.7 ps （rms） and the peak current exceeds 500 A when operated in the optimized condition. The sensitivity of the bunch length on the phase of the acceleration field and magnetic field of the bunch compressor was also measured and analyzed.     

Instrumentation of coherent X-ray imaging and the primary experimental results

Coherent X-ray microscopy has advanced towards higher-energy, more brilliant sources over the past decade since its demonstrations, and many advancements have been made towards optimizing this imaging technique. Here we present both the experimental instrument for obtaining diffraction patterns and the primary reconstruction of yeast cell 2D projection. In addition, the characteristics of the existing optics at BL29XUL of SPring-8 Facility and the method of image reconstruction are discussed.     

Induced electric fields and plasmonic interactions between a metallic nanotube and a thin metallic film

We have numerically simulated the induced electric fields and the plasmonic interactions of a metallic nanotube near a thin metallic film. Our study shows that the energies and intensities of the plasmon resonances depend strongly on the aspect ratio (the ratio of the inner to outer radius) of the nanotube as well as the separation between the center of the nanotube and the upper surface of the metallic film and the thickness of the film. The enhancement of the induced electric field of this system reaches ...     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.