可数sober化

对于给定的拓扑空间X,借助于X中的可数既约闭集给出了拓扑空间X的一种可数sober化。证明了拓扑空间X的可数既约集可以诱导出集合X上的一个拓扑,讨论了在该拓扑下的一些性质,特别地证明了可数sober空间上由可数既约集诱导的拓扑与原拓扑一致。     

磁敏智能软材料及磁流变机理

磁敏智能软材料是一类将微米或纳米尺度的磁性颗粒分散在不同基体中制备而成的多功能复合材料.由于其流变性能在外磁场的调控下可以实现连续、快速、可逆的改变,因此在建筑、振动控制和汽车工业等领域得到了广泛地应用.本文首先介绍了磁敏智能软材料发展历史及分类,分析了不同种类的磁敏智能软材料的特点和存在的科学问题;然后从实验和理论两个方面讨论了磁流变机理的研究现状;最后从实际应用的角度对这类材料未来的发展方向进行了展望.      

溶胶-凝胶法制备MoP/SiO2催化剂加氢脱硫催化活性的研究

以正硅酸乙酯为硅源,以钼酸铵和磷酸二氢铵为钼源和磷源,采用溶胶-凝胶法,经干燥、焙烧,程序升温还原制备得到二氧化硅负载磷化钼(MoP)催化剂。以噻吩、二苯并噻吩为模型化合物,对负载催化剂的加氢脱硫活性进行评价,考察了负载量、反应压力、反应温度等因素对催化活性的影响。实验结果表明,MoP/SiO₂催化剂Mo的最佳负载量为20%,升高反应压力和温度均有利于提高二苯并噻吩的转化率,但降低了产物中联苯的含量。     

多通道光纤法-珀解调系统分析与实验EI北大核心CSCD

利用白光干涉型光纤法一珀传感器和非扫描式相关解调原理,设计了一种基于非扫描式相关解调的多通道光纤法珀解调系统并进行了实验研究．利用柱面镜成线性光斑的特性以及2倍焦距成等大倒立像的原理,建立光纤法一珀非扫描式相关解调的光学模型,进行了光学特性分析和参量优化;设计了光学系统和硬件解调系统,制作了基于非扫描式相关解调的多通道光纤一法珀解调仪样机．同时采用巴特沃斯滤波器有效滤除了噪音,提高了仪器的解调准确度．测试实验表明：当测量范围为10～40μm,分辨率为8nm时,稳定性可达到7nm,能实现对传感器腔长的实时测量,且测量准确度高、稳定性和一致性好,能够进行多点探测,提高了复用能力．     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

In this paper, the effect of floating body effect(FBE) on a single event transient generation mechanism in fully depleted(FD) silicon-on-insulator(SOI) technology is investigated using three-dimensional technology computer-aided design(3DTCAD) numerical simulation. The results indicate that the main SET generation mechanism is not carrier drift/diffusion but floating body effect(FBE) whether for positive or negative channel metal oxide semiconductor(PMOS or NMOS). Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking(IS) layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.     

Topological superconductivity in Janus monolayer transition metal dichalcogenides

The Janus monolayer transition metal dichalcogenides (TMDs) $MXY$ ($M={\rm Mo}$, W, $etc$. and $X, Y={\rm S}$, Se, $etc$.) have been successfully synthesized in recent years. The Rashba spin splitting in these compounds arises due to the breaking of out-of-plane mirror symmetry. Here we study the pairing symmetry of superconducting Janus monolayer TMDs within the weak-coupling framework near critical temperature $T_{\rm c}$, of which the Fermi surface (FS) sheets centered around both $ărGamma$ and $K (K')$ points. We find that the strong Rashba splitting produces two kinds of topological superconducting states which differ from that in its parent compounds. More specifically, at relatively high chemical potentials, we obtain a time-reversal invariant $s + f + p$-wave mixed superconducting state, which is fully gapped and topologically nontrivial, $i.e.$, a $\mathbb{Z}_2$ topological state. On the other hand, a time-reversal symmetry breaking $d + p + f$-wave superconducting state appears at lower chemical potentials. This state possess a large Chern number $|C|=6$ at appropriate pairing strength, demonstrating its nontrivial band topology. Our results suggest the Janus monolayer TMDs to be a promising candidate for the intrinsic helical and chiral topological superconductors.     

周期函数的运算与变式

今年5月初我开设了一堂《和函数f(x)=x+sinx的性质探究》公开课,组内一名听过我课的老教师参加了今年上海的高考命题.笔者发现2011年上海高考卷中的第13题与我的公开课主题不谋而合!2011年山东高考卷中也考查了类似和函数的图像,2009年四川高考卷