偏振无关多模干涉型1×3光功分器的设计

设计具有宽带性能的偏振无关1×3光功分器,采用离子辅助沉积方法调节三明治结构芯层SiNx的折射率,使得正交偏振模的拍长相等而实现偏振无关;梯形多模干涉波导与锥形波导的组合可实现器件宽带宽、低损耗及良好的分光均匀性.运用有限时域差分法进行建模仿真及参数优化,结果表明:器件的多模干涉波导长度仅为13.2 μm,附加损耗低于...     

碳化硅基上3UCVD淀积二氧化硅及其C-V性能测试

利用3UCVD技术在p型4H-SiC上制备了栅氧化层，其正的氧化物电荷密度仅有1.6×10¹¹cm^-2,这一结果优于传统的热氧化工艺.为检验氧化层质量所做的高频C-V测试采用了正面接地的新的测试结构，克服了常规测试结构的缺点. 关键词： 淀积 高频C-V测试 二氧化硅 碳化硅     

托卡马克离子温度梯度湍流输运同位素定标修正中杂质的影响

托卡马克实验发现,在不同参数条件下,等离子体能量约束经验定标律会有或大或小的修正.为解释这种修正现象发生的原因,应用回旋动理学方法,对含重(钨)杂质等离子体离子温度梯度(ITG)(包括杂质模)湍流输运的同位素效应进行了数值研究.结果表明钨杂质效应极大地修改了同位素定标律和有效电荷效应.随着杂质离子电荷数Z和电荷集中度f_z的变化,同位素定标律在较大范围内变化. ITG模最大增长率定标大约为M_i~(-0.48→-0.12),杂质模的定标为M_i~(-0.46→-0.3),其中, M_i表示主离子质量数.在ITG模湍流中,有效电荷数越大,关于M_i的拟合指数偏离-0.5越远,表现为同位素质量依赖减弱.在两种模中,杂质电荷集中度越大,同位素质量依赖越弱.研究了杂质效应使定标关系发生偏离的原因,证实杂质种类、杂质电荷数和杂质浓度的不同,是引起同位素质量依赖发生改变的重要原因.结果证实并解释了不同参数条件下托卡马克同位素定标的差异性.研究成果可以为ITER实验安排及杂质相关输运实验中选择装置材料、工作气体和设置其他参数提供理论参考.     

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_(1-x)Sn_x films on Si(100) and Si(111)

Germanium-tin films with rather high Sn content(28.04% and 29.61%) are deposited directly on Si(100) and Si(111)substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge_(1-x)Sn_x films is investigated by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM). The x-ray diffraction(XRD) is also performed to determine the crystallinities of the Ge_(1-x)Sn_x films. The experimental results indicate that root mean square(RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional(3 D) island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge_(1-x)Sn_x/Si(111) has no obvious advantage over that of Ge_(1-x)Sn_x/Si(100) and the selection of Si(111) substrate is an effective method to improve the surface morphologies of Ge_(1-x)Sn_x films. We also find that more severe Sn surface segregation occurs in the Ge_(1-x)Sn_x/Si(111) sample during annealing than in the Ge_(1-x)Sn_x/Si(100) sample.     

Effects of Annealing on Microstructure and Optical Properties of TiO2 Sculptured Thin Films

The evolution of microstructure and optical properties of TiO2 sculptured thin films under thermal annealing is reported. XRD, field emission SEM, UV-Vis-NIR spectra are employed to characterize the microstructural and optical properties. It is found that the optimum annealing temperature for linear birefringence is 500℃. The maximum of transmission difference for linear birefringence is up to 18%, which is more than twice of that in as-deposited thin films. In addition, the sample annealed at 500℃ has a minimum of column angle about 12℃. The competitive process between the microstructural and optical properties is discussed in detail. Post-annealing is a useful method to improve the linear birefringence in sculptured thin films for practical applications.     

原子核反应系统的最优控制问题

本文讨论基于单能静态稆向同性迁移方程的原子核反应堆系统的最优控制问题。本文把散射裂变截面函数当作控制变量，在一定条件下，证得最优控制的存在唯一性。本文最后给出最优散射裂变截控制存在的一个必要条件。     

单轴应变硅nMOSFET栅隧穿电流模型

本文基于量子机制建立了单轴应变硅nMOSFET栅隧穿电流模型,分析了隧穿电流与器件结构参数、偏置电压及应力的关系.仿真分析结果与单轴应变硅nMOSFET的实验结果符合较好,表明该模型可行.同时与具有相同条件的双轴应变硅nMOSFET的实验结果相比,隧穿电流更小,从而表明单轴应变硅器件更具有优势.该模型物理机理明确,不仅适用于单轴应变硅nMOSFET,只要将相关的参数置换,该模型也同样适用于单轴应变硅pMOSFETs. 关键词： 单轴应变 nMOSFET 栅隧穿电流 模型     

四唑互变异构反应的密度泛函理论(DFT)研究

运用11种密度泛函理论方法对四唑互变异构反应进行了计算研究。结果表明,B3LYP-DFT法与从头算的优化几何和能量最为吻合;在6-31^*基组下B3LYP计算的IR频率与MP2/6-311G^*^*计算结果相差很小;用未经校正的B3LYP计算频率求得的产物(2H-四唑)的热力学性质与实测结果也完全一致;由此推荐B3LYP-DFT法适合于对四唑化合物作系统研究。     

高能体系分子间相互作用研究: 含NNO~2和NH~2混合物

以abinitioHF/6-31G^*计算求得NH~3+NH~2NO~2的两种优化构型,经MP4电子相关能校正和Boys-Bernardi方案校正基组叠加误差求得精确的分子间相互作用能。还用PM3方法计算研究TATB(均三氨基三硝基苯)分别与HMX(奥克托金)和RDX(黑索金)的混合体系,经色散能校正电子相关近似地求得分子间相互作用能。结果表明,NH~3与NH~2NO~2之间的最大结合能为-38.32kJ/mol;分子间相互作用增强了N-NO~2键强度;TATB与HMX,RDX的结合能远大于石墨与HMX或RDX的结合能,表明TATB对HMX和RDX的润湿和钝感作用较石墨更强。     

季戊四醇四硝酸酯的分子结构和热解机理

运用SCF-AM1-MO方法，在RHF和UHF水平上分别全优化计算了季戊四醇四硝酸酯(太安)的分子结构和热解机理。计算所得三种构象的能量相差很小、且相互转化的能垒也较小。其均裂O-NO~2键(生成双自由基)的热解引发反应活化能较小，而通过α-H转移产生RCHO和HONO的环消除反应需要较高活化能。