斑海豹胡须涡激振动及其尾流循迹机理直接数值模拟

在视力和听力受到限制的条件下,斑海豹可以通过具有特殊外形的胡须识别和追踪水中游鱼的尾迹.从仿生学的角度,对斑海豹胡须在尾迹流场中的振动特性和循迹机理进行研究,有助于开发研制新型水下探测器.本文采用嵌入式迭代浸入边界法,在雷诺数Re=300和折合流速Ur=6.0的条件下,对均匀流场和尾迹流场中斑海豹胡须模型的涡激振动进行...     

求解完全强非线性自治系统周期解及其稳定性的三变量迭代法

本文提出用广义位移x,基波幅值变化率da/dt=A(a)和系统频率ω(a)进行迭代的一种解析方法——三变量迭代法,求解一般的二阶完全强非线性自治系统的周期解及其稳定性。通过若干实例计算,表明了该方法行之有效。     

湍流研究最近半世纪的一些发展

<正> 一、绪言(Ⅰ)研究湍流的意义(Ⅱ)国外开展湍流研究的情况二、湍流理论的进展(Ⅰ)先把流体动力学方程组平均的理论(a)1950年以前发展情况简述(1)Reynolds方程和混合长度理论(2)各向同性湍流的统计理论(3)具有剪应力的普通湍流理论(b)最近的剪切湍流的半经验理论      

终边相同的角的表示形式及应用

<正>所有与角α终边相同的,连同角α在内(而且只有这样的角)可以用式子k·360°+α,k∈Z表示,或用2kπ+α,k∈Z表示,它们互称终边相同的角.与角α终边相同的角的集合可记作S={β|β=k·360°+α,k∈Z},或S={β|β=2kπ+α,k∈Z}.下面举例说明这一表示形式及应用.例1写出在-720°到720°之间与-1050°的角终边相同的角的度数.简析首先写出与-1050°的角终边相同     

问题变分不等式的一类各向异性Crouzeix-Raviart型有限元逼近

本文研究了Signorini变分不等式问题的一类各向异性Crouzeix-Raviart型非协调有限元逼近。通过一些新的技巧,得到了相应的最优误差估计。     

R600a喷雾冷却系统换热过程

以R600a压力式封闭系统喷雾冷却过程为研究对象,对其换热过程进行分析。对液滴撞击热面后的状态进行建模,分析了其运动状态。通过忽略液膜的对流换热,引入韦伯数来简化并修正雾滴与热源表面的对流换热系数关联式;借鉴二次成核理论,通过单位时间内,单位面积上覆盖的雾滴数量对核态沸腾换热系数关联式修正。通过上述分析,以对流换热和核态沸腾换热两种机理为中心,建立了新的换热系数关联式。通过与其他文献的关联式、实验测量值进行比较、不同工质进行比较、不同实验系统比较,发现该式预测值和实验测量值偏差在±20%以内,能够很好地预测压力式封闭系统喷雾冷却过程的换热系数。     

卟啉及其配合物在分析化学中应用进展

综述了卟啉及配合物在分析化学中的应用研究进展。重点介绍了其在光度分析、电化学、分子识别、探针等方面的应用。     

Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.