低能电子穿越玻璃直管时倾角依赖的输运动力学

采用900 e V能量的电子对直玻璃管进行了穿透实验,测量了玻璃管在倾角为–0.15°,–0.4°和–1.15°时充电过程角分布的时间演化,以及平衡态下出射电子能谱.发现穿透率随时间先下降后上升最后趋于平稳,下降的时间随倾角的增大而减小.当倾角为–0.4°和–1.15°时,电子穿透率下降到最低点时几乎看不到穿透电子(穿透率小于3‰),这种穿透率最低点状态保持时间随倾角增大而增大.穿透电子的角分布中心随着时间变化.在平稳状态时,发现穿透电子的能量损失随倾角增大而增大.采用蒙特卡罗方法模拟了电子经过管壁不同次数反射后的能谱,与测量能谱进行对比,发现–0.15°,–0.4°和–1.15°倾角下,穿透电子分别经历了管壁的一次、两次和三次与表面的反射过程.基于此,本文对电子穿越玻璃管的充电过程动力学给出了物理解释.实验结果和理论分析表明,在小倾角下玻璃管内能形成宏观负电荷累积,排斥后续电子形成反射,增加电子出射概率,这对应用绝缘体微结构,例如玻璃锥管产生稳定的电子微束具有重要的参考意义.     

Development of a 170-mm hollow corner cube retroreflector for the future lunar laser ranging

Over the past 50 years, lunar laser ranging has made great contributions to the understanding of the Earth–Moon system and the tests of general relativity. However, because of the lunar libration, the Apollo and Lunokhod corner-cube retroreflector(CCR) arrays placed on the Moon currently limit the ranging precision to a few centimeters for a single photon received. Therefore, it is necessary to deploy a new retroreflector with a single and large aperture to improve the ranging precision by at least one order of magnitude. Here we present a hollow retroreflector with a 170-mm aperture fabricated using hydroxide-catalysis bonding technology. The precisions of the two dihedral angles are achieved by the mirror processing with a sub-arc-second precision perpendicularity, and the remaining one is adjusted utilizing an auxiliary optical configuration including two autocollimators. The achieved precisions of the three dihedral angles are 0.10 arcsecond,0.30 arc-second, and 0.24 arc-second, indicating the 68.5% return signal intensity of ideal Apollo 11/14 based on the far field diffraction pattern simulation. We anticipate that this hollow CCR can be applied in the new generation of lunar laser ranging.     

InAs/InP柱型量子线中隧穿时间和逃逸问题的研究

在有效质量近似和绝热近似下,利用转移矩阵法研究了电子通过In As/In P/In As/In P/In As柱形量子线共振隧穿二极管的输运问题,分析和讨论了电子居留时间以及电子的逃逸过程.详细研究了外加电场、结构尺寸效应对居留时间和电子逃逸的影响.居留时间随电子纵向能量的演化呈现出共振现象;同时,结构的非对称性对电子居留时间有很大的影响,随着结构非对称性的增加,居留时间表现出不同的变化.利用有限差分方法研究了非对称耦合量子盘中电子的相干隧穿逃逸过程.     

Hybrid phase-locked loop with fast locking time and low spur in a 0.18-μm CMOS process

We propose a novel hybrid phase-locked loop(PLL) architecture for overcoming the trade-off between fast locking time and low spur. To reduce the settling time and meanwhile suppress the reference spurs, we employ a wide-band single-path PLL and a narrow-band dual-path PLL in a transient state and a steady state, respectively, by changing the loop bandwidth according to the gain of voltage controlled oscillator(VCO) and the resister of the loop filter. The hybrid PLL is implemented in a 0.18-μm complementary metal oxide semiconductor(CMOS) process with a total die area of1.4×0.46 mm2. The measured results exhibit a reference spur level of lower than-73 dB with a reference frequency of10 MHz and a settling time of 20 μs with 40 MHz frequency jump at 2 GHz. The total power consumption of the hybrid PLL is less than 27 mW with a supply voltage of 1.8 V.     

L_g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n~+-GaN layer by MOCVD

High-performance Al Ga N/Ga N high electron mobility transistors（HEMTs） grown on silicon substrates by metal–organic chemical-vapor deposition（MOCVD） with a selective non-planar n-type Ga N source/drain（S/D） regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance（gm） of 247 m S/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard Ga N HEMT on silicon substrate, the fTand fMAXis 50% and 52% higher, respectively.     

Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes

In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance.     

低能电子在玻璃管中的稳定传输

分别对裸的直玻璃管和外壁与出入口两端面涂导电银胶的直玻璃管进行了低能电子穿透实验.穿透电子的倾角分布显示,穿透电子强度随倾角增大而减少,并且穿透倾角不会超过玻璃管的几何张角.还测量了玻璃管在倾角为-0.2°时的充电过程.对于裸玻璃管,在充电过程中,穿透率和角分布有显著的振荡现象.整体来看,穿透率随时间先下降后上升,最后在某个平均值附近振荡;角分布随穿透率变化同步变化,先向正角度移动再向负角度移动,最后在玻璃管的倾角附近振荡.对于涂导电胶的玻璃管,在充电过程中,穿透率和角分布稳定变化.穿透率随时间先下降后上升最后平稳,角分布随时间先向负角度移动再向正角度移动,最后在玻璃管倾角附近稳定.通过模拟电子与SiO₂材料的碰撞过程,提出了电子在裸玻璃管和涂导电胶玻璃管中的充电过程的物理图像.该物理图像能很好地解释电子在裸玻璃管和涂导电胶的玻璃管中充电过程的实验结果.最后,依据实验结果和物理图像给出了低能电子在玻璃毛细管中稳定输运的条件.     

光阴极注入器型能量回收射频加速器

 光阴极注入器型能量回收射频加速器（PERL）是新一代加速器，在高平均功率自由电子激光和下一代高亮度光源等研究中有很好的应用前景。分析了PERL的强流与高平均功率特性，对注入器输出束流品质的要求及光阴极注入器、超导加速腔等关键技术进行了研究，设计分析了一种特殊结构的高压DC Gun光阴极注入器，能有效地提高DC加速腔中的加速场强，当高压为1MV和加速场达到10MV/m时，产生的电子束流能够基本满足PERL应用要求。同一超导加速段中的束流加速和能量回收的数值模拟计算结果表明，能获得高效率电子束流能量回收效果。     

自扩散系数的脉冲梯度-自旋回波的测量及其应用

通过对受激回波,纵向涡流延迟(LED),偶极梯度-纵向涡流延迟(LED-BPP)三个脉冲序列的比较,挑选出最适合于测量有耦合体系的分子的自扩散系数的脉冲序列,并用它测量了一系列不同浓度的C₁₂AS-D₂O溶液和C₁₂AS-D₂O-0.1mol/L NaCl溶液的自扩散系数,得到了C₁₂AS在水溶液中聚集过程的信息.     

CFEL光阴极注入器驱动激光器的实验

在高功率自由电子激光初级实验装置（CFEL）研究中，驱动激光直接照射光阴极而发射电子，其性能将在很大程度上决定注入器乃至整个自由电子激光实验系统的性能：如电子束微脉冲宽度、电子束微脉冲流强、电子束微脉冲峰值抖动等。文中针对CFEL初期研究目标（3～8μm）对光阴极注入器的要求，对光阴极RF腔注入器的驱动激光器进行了方案设计，提出了驱动激光器的参数要求。根据方案进行了工程实施，购置了锁模激光器和时间同步器，放大与倍频系统正在研制当中。