棒状Sb2S3-nafion纳米复合膜修饰玻碳电极的大肠杆菌DNA传感器

将棒状Sb2S3纳米粒子与Nafion聚合物在乙醇溶液中超声混合得到均匀的Sb2S3-Nafion纳米复合材料分散液。将该复合材料滴涂至玻碳电极(GCE)表面,得到稳定的Sb2S3-Nafion修饰电极。循环伏安和阻抗表征实验表明,由于Sb2S3的纳米尺寸效应及半导体效应,电极的电化学性能得到了极大的提高。采用PCl5为活化剂,将Nafion表面的磺酸基团酰氯化,再利用共价键合法将末端修饰氨基的大肠杆菌DNA特征序列固定到修饰电极表面,制备了一种新型的DNA电化学传感器。以亚甲基蓝(MB)为杂交指示剂,将制备的DNA电化学传感器应用于大肠杆菌基因目标序列检测,结果表明,该传感器对目标DNA具有较宽的动力学线性范围(1.0×10-12～1.0×10-7mol/L),检出限达到2.4×10-13mol/L。此外,选择性实验表明该传感器对互补序列、单碱基错配序列、三碱基错配序列和完全错配序列具有良好的识别能力。     

组合注入质子导致不对称耦合双量子阱截面混合效应研究

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Zn0.04Cd0.96Te中深能级的红外光电导谱研究

应用红外光电导谱研究半绝缘p型Zn_0.04Cd_0.96Te中的深能级,在温度从4.2到165K范围内,观察到了位于0.24,0.34,0.38,0.47,0.55和0.80eV处6个光电导响应峰.结合4.2K下光致发光谱的测量结果以及对Zn_xCd_1-xTe中深能级发光光谱、深能级瞬态谱等已有的研究结果,对这些响应峰对应的深能级特性进行了讨论 关键词： xCd_1-xTe')" href="#">Zn_xCd_1-xTe 光电导 杂质 深能级     

Micro-LED全彩显示中量子点膜层制备及光转换效率优化

将表面配体改性的CdSe/ZnS量子点(Quantum dots)和光刻胶混合,进而采用光刻工艺在InGaN/GaN蓝光Micro-LED上实现了最小尺寸为3μm的高分辨率、高光效的量子点颜色转换膜层.同时系统研究了不同厚度和混合比例的量子点膜层的吸收/发射光谱及光致发光量子产率(PLQY).为优化光转换效率,量子点膜...     

一种测定S2–的金纳米棒非聚集比色探针

基于S2-对金纳米棒(AuNRs)纵横轴溶出速度的差异性所引起的红移量(△λ)和颜色变化,开发了AuNRs溶出比色探针.探针线性范围(10～ 10000.0 μmol/L)宽、灵敏度高(检出限为7.9 μmol/L)、选择性好,用于实际样品中S2-含量的测定和人体疾病诊断,其结果与亚甲基蓝法相吻合.此外,探讨了探针测定S2-的反应机理.     

线性抛物Volterra差分方程的全局吸引性

In this paper，by constructing Liapunov Sequences，we study the golbal attractivity of linear Parabolic volterra difference equations of neutral type and obtain some sufficient conditions for the global attractivity of the zero solution of above equations．     

Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercala- tion, seven different metals have been successfully intercalated at the interface of graphene/Ru（O001） and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru（O001） and on Ir（l I 1）, have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications.     

Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling

We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase(or decrease) with the decrease(or increase) of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.     

不锈钢材料中微量铌的分离技术研究

本文开展了复杂样品中微量Nb的分离技术研究,并用所建立的方法对辐照后不锈钢材料中的Nb进行了分离。试验结果表明,自制的水合五氧化二锑(HAP)在5mol·L-1的硝酸溶液中对Nb具有较强的分离性能,模拟试验条件下Nb的最大回收率可达到84.1%;对不锈钢样品中Nb的分离结果显示,所建立的方法对Nb的分离是有效的。