激光二极管抽运的高输出单频稳频Nd：YVO4激光器

研制了光纤耦合的激光二极管抽运的单频稳频Nd:YVO4激光器。在输入抽运动率为6W的情况下,获得2W稳定单频红外输出,光－光转换效率为33．3％,电－光转换效率为10％。通过边带稳频系统将输出激光锁定在法布里－珀罗共焦参考腔的中心频率上,频率稳定性优于400kHz。     

激光二极管抽运Nd：YVO4／LBO腔内倍频5．3W连续波激光器

报道了激光二极管双向抽运Nd:YVO4晶体,LBO腔内倍频,最大输出功率为5．3W的连续波绿光激光器,采用LBO晶体Ⅰ类非临界相位匹配（NCPM）,温度调谐,当抽运光功率为20W时,获得了5．3W TEM00模532nm绿光输出,光－光转换效率达26．5％,并对绿光模式及输出功率随LBO晶体温度的变化关系进行了测量,与理论结果符合较好。     

Estimating Magic Numbers Larger Than 126 by Fermi—Yang Liming Method

The Fermi-Yang Liming method is followed and developed to estimate new magic numbers in nuclei with a Woods-Saxon density function.The calculated results predict that the magic number next to 126 should be around 184 and 258.     

冲击波作用下CHBr／NaCl界面热弛豫特性研究

非透明材料冲击温度测量是通过对界面光辐射历史的观察实现的,因此对界面光辐射历史的研究是非透明材料冲击温度测量的基础。但由于冲击阻抗的失配导致界面上出现波的反射而引起温度的变化与界面热流动产生的温度变化交杂在一起,以及过程的瞬时性,使得对这一过程的实验研究显得非常困难,设计了一种界面波阻抗近似相同的特殊实验装置,用光辐射测量技术研究了在冲击压缩下CHBr3/NaCl界面的热弛豫过程,实验结果和理论分析表明CHBr3/NaCl界面的热弛豫时间在纳秒量级,与Grover等人的理论预估一致。     

喹诺酮类药物的质子化作用及互变异构现象与荧光特性的相关性研究

研究了不同酸碱条件下8种喹诺酮类药物的荧光特性,发现了在不同PH介质中喹诺酮类药物的荧光波长和荧光强度的变化规律,并对喹诺酮类药物质子化作用及互变异构现象与荧光性质的相关性进行了考察,确定了不同酸碱条件下的两种发光形体,进而对相应的变化机理进行了探讨。     

X射线衍射法在泌尿系结石研究中的应用

泌尿系结石是一种世界范围的常见病、多发病。准确分析尿石的化学成分和物相,有助于了解泌尿系结石的形成机制。X射线衍射法(XRD)是进行泌尿系结石研究的最重要方法之一,用作定性分析时具有可靠性,用作定量分析时具有准确性,且检测简便迅速、灵敏度高、多组分和多晶态可一次性检测。文章综述了XRD在泌尿系结石定性和定量分析中的应用以及XRD与质子激发X射线发射光谱(PIXE)、X射线光电子能谱(XPS)和原子力显微镜(AFM)等联合分析尿石的研究进展。     

Numerical Study on Left-Handed Materials Made of Ferrite and Metallic Wires

Due to coupling effect, we show that it is difficult to realize the left-handed material by placing metallic wires directly into a ferrite matrix. However by introducing an insulating material round the metallic wires to decouple the direct interaction between the metallic wire and ferrite matrix, we have proposed two microstructures, which are shown by numerical simulation to have negative refractive indexes. The influence of microstructure on the transmission property is also examined.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.