Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs／GaAs Quantum Dots Capped by InAIAs／InGaAs Layers

Effects of rapid thermal annealing on the optical and structural properties of self-assembled InAs/GaAs quantum dots capped by the InAlAs/InGaAs combination layers are studied by photoluminescence and transmission electron microscopy. The photoluminescence measurement shows that the photoluminescence peak of the sample after 850℃ rapid thermal annealing is blue shifted with 370meV and the excitation peak intensity increases by a factor of about 2.7 after the rapid thermal annealing, which indicates that the InAs quantum dots have experienced an abnormal transformation during the annealing. The transmission electron microscopy shows that the quantum dots disappear and a new InAlGaAs single quantum well structure forms after the rapid thermal annealing treatment. The transformation mechanism is discussed. These abnormal optical properties are attributed to the structural transformation of these quantum dots into a single quantum well.     

用作人体植入物的含铈钛合金的生物安全性评价

采用体内急性全身性毒性实验、溶血实验、 MTT实验 (Tetrazolium-based colorimetric assay) 和材料浸渍液培养细胞的形态学观察法实验对含铈钛合金的生物安全性进行了初步的评价。用X射线光电子能谱仪XPS分析了合金表面氧化膜成分，并用原子发射光谱仪ICP检测了浸渍液中合金元素的种类和浓度。结果显示：含铈和不含铈的Ti-Fe-Mo-Mn-Nb-Zr系合金表面均形成了以TiO2为主的致密氧化膜，浸渍液中均存在浓度为0.2～0.27 mg·L-1的Fe和0.16～0.87mg·L-1的Mn，这种义齿材料有利于补充人体所需的Fe和Mn；两者均未见任何急性毒性反应；溶血程度为0.558%～0.67%，有良好的血液相容性；细胞毒性实验评价级别为0和1级，无明显的细胞毒性作用；倒置相差显微镜观察细胞形态，未发现异常。由以上结果可以初步认为在实验浓度范围内的铈生物安全性是能够保证的。     

Lω1ω语言格值模型论的Malitz插值定理

本文利用和谐性质的方法，证明了Ｌω１ω语言格值模理论的Ｍａｌｉｔｚ插值定理，并给出了有意义的应用。     

微热与微功不是全微分的独立自变量选择

从数学和物理两个方面说明“微热与微功不是全微分”这一结论的确切意义     

关于复变函数的若干问题

<正> 一、简史复数是在16世纪由G.Cardano在解二次及三次代数方程时引进的。18世纪J.le Rond d’Alem-bert研究流体运动,与L.Euler引进了现在所谓Cauchy-Rimann条件。L.Euleir还研究了复变数     

遥爪型液体聚合物及其多相共聚物的合成与表征——Ⅲ.遥爪型三组份四臂星形共聚物的合成及其动态力学性能

本文在前报所合成的端羧基乙烯基四氢呋喃-环氧丙烷液体共聚醚的基础上,利用其端羧基同双官能团环氧反应,生成端环氧基三嵌段共聚物。然后再利用端乙烯基与烯类单体反应,制备了遥爪型三组份四臂星形共聚物。通过动态力学性能的测试,观察了一些因素对阻尼性能的影响。     

EFFECT OF THE SUBSTITUTION OF Ga ON THE STRUCTURE AND MAGNETIC PROPERTIES OF Dy2Fe17 COMPOUND

Dy₂Fe_17-xGa_x (x = 0,1,2,3,4, 5 and 6) compounds were prepared by arc melting. These compounds are of single phase, having a hexagonal Th₂Ni₁₇-type structure fox x=0 and rhombohedral Th₂Zn₁₇-type structure for x≥1. The substitution of Ga for Fe in the Dy₂Fe₁₇ leads to a linear increase of unit-cell volumes. The saturation magnetization M_s at 1.5K is found to decrease linearly with increasing Ga concentration, from 65emu/g for x= 0 to 5emu/g for x = 6; and the Fe magnetic moment μ_Fe is almost independent of Ga concentration. The Curie temperature T_C is found first to increase with increasing Ga content x, and goes through a maximum value of 559 K at about x = 3, then decreases. The sharp increase of T_C at lower Ga content may result from the increase of unit cell volumes. Dy₂Fe_17-xGa_x compounds with x≤5 exhibit easy plane anisotropy at room temperature, and those with x = 6 possess easy-axis.     

CHARGE STATES OF SPUTTERED ATOMS/IONS

The charge states of sputtered cesium and oxygen ions/atoms from metal surfaces have been discussed with the time-dependent Newns-Anderson model. The final charge state distribution has been calculated as a function of work function of the surfaces. The calculated results fit the experimental data well. Besides, the dependence of the final charge states of the sputtered oxygen particles on the surface temperature is also predicted.     

用14MeV中子轰击铌伴生γ射线研究

利用脉冲化的T(d,n)⁴He中子源、伴随粒子方法、Ge(Li)探测器和飞行时间技术测量了14.9MeV中子和铌反应在30°—140°之间七个角度上的分立γ射线谱;由高分辨γ谱分析程序识别了79条谱线;初步确定了62条谱线所由产生的反应类型和跃迁能级,其中有40条谱线是在由中子诱发的核反应中首次发现的.定出了每条谱线在七个角度上的微分产生截面,结果表明该反应中的伴生γ发射基本上是各向同性的.