催化剂的孔道限域效应

限域孔道可以调控催化剂的表面电子分布和几何结构,进而影响催化剂的活性、选择性和稳定性.本文结合理论计算和实验方法,从热力学、动力学、几何效应以及电子转移等角度出发,阐明了不同限域体系中催化剂活性组分和反应分子特性的差异,揭示了限域孔道对反应物种扩散、吸附和反应等过程的影响规律,以期为催化剂的微观结构设计和反应性能调控提供借鉴.     

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV).     

可聚合型溶致液晶单体3,4,5-三(11-十一烷氧丙烯酰氧基)苯甲酸钠的自组装及紫外光固化性能

以3,4,5-三羟基苯甲酸为原料,依次经过酯化、醚化、酰氯化和钠盐化四步反应合成一种可聚合型溶致液晶单体3,4,5-三(11-十一烷氧丙烯酰氧基)苯甲酸钠,并对其结构进行了傅里叶变换红外与1H核磁表征. 在室温下研究了该单体在水中的自组装行为,组装体结构通过偏光显微镜与X射线衍射仪进行表征. 研究表明,单体与水比例为80:20时可自组装为层状(La)相,92:8时组装为反六方(H_II)相,这与临界堆积参数的理论计算相吻合,表明单体浓度是影响组装体结构的重要因素. 在组装的基础上研究了含不同光引发剂的溶致液晶体系的双键转化率及固化后组装体结构的保留. 经实时红外表征及溶胶-凝胶法的验证发现在光强为30 mW/cm²的365 nm下曝光30 min,含引发剂Darocur2959的溶致液晶体系双键转化率可达78%. 聚合之后La相与H_II相的纳米结构都得到了保留.     

右(左)拟α-可逆环

给出了右(左)拟α-可逆环的定义,讨论了右(左)拟α-可逆环与线性McCoy环、可逆环、α-刚性环、约化环、阿贝尔环以及弱α-Skew Armendariz环之间的关系.研究了右(左)拟α-可逆环的相关性质和基本扩张.推广了α-可逆环和α-刚性环的相关结论.     

A novel LDMOS with a junction field plate and a partial N-buried layer

A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (R_on.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in R_on.sp by 45.7% simultaneously.     

激光质谱法探测不同状态下机动车尾气中芳香烃物质相对含量的变化

利用高灵敏度、高选择性、多组分和快速实时分析探测的方法——激光质方法研究机动车尾气。发现在266nm激光作用下,低速状态下机动车尾气中的芳香族含量远高于加速状态下的含量。     

丁酮分子的共振增强多光子电离解离研究

利用可调谐染料激光研究了丁酮分子的共振增强多光子电离解离过程,发现在428～448nm激光波段丁酮分子发生的是经4p和4dRydberg态的(3+1)多光子过程。此外,我们还用“梯开关”模型对丁酮母体离子的解离机理和各碎片来源作了详细的分析,分析认为在丁酮母体离子的解离过程中存在H原子重排与电荷的重新分布现象。     

关于微分熵的一类强偏差定理

利用关于乘积分布密度的相对熵和相对熵率的概念,建立了相依连续型随机变量序列关于参考微分熵的一类强偏差定理,证明中给出了将Laplace变换应用于微分熵强偏差定理的研究的一种途径．     

关于可列非齐次马氏泛函的一类强偏差定理

本文利用关于{σn(ω),n≥0)的样本相对熵率的概念,研究相依离散型随机变量序列函数的极限性质,从而建立了一类关于可列非齐次马氏泛函的强偏差定理.