ULTRAHIGH DATA DENSITY STORAGE WITH SCANNING TUNNELING MICROSCOPY

Ultrahigh density data storage devices made by scanning probe techniques based on various recording media and their corresponding recording mechanisms, have attracted much attention recently, since they ensure a high data density in a non-volatile, erasable form in some kinds of ways. It is of particular interest to employ organic polymers with novel functional properties within a single molecule (or a single molecular complex) for fabricating electronic devices on a single molecular scale. Here, it is reported that a new process for ultrahigh density and erasable data storage, namely, molecular bistability on an organic charge transfer complex of 3-nitrobenzal malononitrile and 1,4-phenylenediamine (NBMN-pDA) switched by a scanning tunneling microscope (STM). Data density exceeds 10¹³ bits/cm² with a writing time per bit of ～1μs. Current-voltage (I/V) measurements before and after the voltage pulse from the STM tip, together with optical absorption spectroscopy and macroscopic four-probe I/V measurements demonstrate that the writing mechanism is conductance transition in the organic complex. This mechanism offers an attractive combination of ultrahigh data density coupled with high speed. The ultimate bit density achievable appears to be limited only by the size of the organic complex, which is less than 1nm in our case, corresponding to 10¹⁴ bits/cm². We believe that provided the lifetime can be improved, molecular bistability may represent a practical route for ultrahigh density data storage devices.     

Synthesis and properties of Au-Fe3O4 and Ag-Fe3O4 heterodimeric nanoparticles

Monodisperse Au-Fe 3 O 4 heterodimeric nanoparticles (NPs) were prepared by injecting precursors into a hot reaction solution.The size of Au and Fe 3 O 4 particles can be controlled by changing the injection temperature.UV-Vis spectra show that the surface plasma resonance band of Au-Fe 3 O 4 heterodimeric NPs was evidently red-shifted compared with the resonance band of Au NPs of similar size.The as-prepared heterodimeric Au-Fe 3 O 4 NPs exhibited superparamagnetic properties at room temperature.The Ag-Fe 3 O 4 heterodimeric NPs were also prepared by this synthetic method simply using AgNO 3 as precursor instead of HAuCl 4.It is indicated that the reported method can be readily extended to the synthesis of other noble metal conjugated heterodimeric NPs.     

有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储

采用扫描隧道显微镜(STM)在3-phenyl-1-ureidonitrile(PUN)有机单体薄膜上进行了超高密度信息存储的研究.通过在STM针尖和高定向裂解石墨(HOPG)衬底之间施加一系列的电压脉冲,在薄膜上写入了一个稳定的5×6信息点阵,信息点的大小是0.8nm.电流电压(I-V)曲线表明,施加电压脉冲前后薄膜的导电性质发生了变化.信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合,从而导致薄膜由高电阻态向低电阻态转变. 关键词： 超高密度信息存储 有机薄膜 扫描隧道显微镜(STM)     

“原子制造:基础研究与前沿探索”专题编者按

制造技术的不断迭代发展带来了器件性能的飞跃,也推动着人类技术的进步.伴随着器件特征尺寸的不断缩小,制造技术先后经历了宏观制造、介观制造、微观制造和纳米制造等多个阶段,当前最具代表性的半导体工艺,已经从微米尺度走到最前沿的3 nm左右,并进一步向更小的尺度迈进.因此,制造技术进入到原子尺度已不再是遥不可及的梦想,而成为现在科技界研究前沿的现实对象.     

钴纳米粒子自组装有序阵列与磁性

采用高温液相分解法制备出平均粒径不同的单分散的钴纳米粒子.用自组装的方法得到二维和三维的钴纳米粒子有序阵列，用透射电子显微镜研究了粒径、温度、有机溶剂以及浓度对钴纳米粒子的自组装的影响.用超导量子干涉仪研究了钴纳米粒子的超顺磁性.这些研究结果为深入研究磁性纳米粒子的物性和在纳米器件中的应用奠定了良好的基础. 关键词： 钴纳米粒子 自组装 超顺磁性     

纳米电子学的最新进展

文章介绍了纳米电子学在自组织生长、器件构造和电学／光学器件应用等方面的最新进展，其中包括：利用流体或极性分子实现了纳米线／管的定向排列；用此方法制成了纳米线逻辑电路和新型纳米线／带薄膜晶体管；研制成功可进行高密度信息存储的单分子层面纳米线交叉电路；进行了半导体CdS纳米线电泵激光和碳纳米管电致发光研究．此外，还对自旋电子学的研究进展进行了简要介绍，对纳米电子学的研究与发展方向提出了建议。     

Charge density wave states in phase-engineered monolayer VTe2

Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe$_{2}$ was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe$_{2}$ has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe$_{2}$, induced by phase-engineering from T-phase VTe$_{2}$. The phase transition between T- and H-VTe$_{2}$ is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe$_{2}$, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust $2\sqrt 3 \times 2\sqrt 3 $ CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.     

用AFM研究DL-缬氨酸晶体的结构及其表面分子的排列

利用原子力显微镜(AFM)成像技术来观察DL-缬氨酸晶体表面分子的规则排列, 研究表明对映体分子在DL-缬氨酸晶体中相互配对排列, 每个晶胞单元中包含两个对映体分子, 属于具有中心对称结构 群, 整个晶体是消旋的. 通过原子力显微镜对DL-缬氨酸晶体表面重复单元的测量结果与X衍射数据对比, 发现用AFM观察到的DL-缬氨酸晶体中分子表面形貌的规整排列的距离, 同X衍射得出的三斜晶系晶胞参数数据基本一致, 由此判定该晶体属于三斜晶系而不是单斜晶系. 探讨了利用纳米技术的研究手段在分子水平研究生命起源中的手性问题, 在确定的晶面上通过分子周期性结构排列规律, 对DL-缬氨酸晶体表面分子进行手性识别.     

Visualizing the Local Twist Angle Variation within and between Domains of Twisted Bilayer Graphene

<正>Moiré superlattices in twisted two-dimensional materials have emerged as ideal platforms for engineering quantum phenomena, which are highly sensitive to twist angles, including both the global value and the spatial inhomogeneity. However, only a few methods provide spatial-resolved information for characterizing local twist angle distribution.     

Electronic states of domain walls in commensurate charge density wave ground state and mosaic phase in 1T-TaS2

Domain walls(DWs) in the charge-density-wave(CDW) Mott insulator 1T-TaS₂ have unique localized states, which play an important role in exploring the electronic properties of the material. However, the electronic states in DWs in 1T-TaS₂have not been clearly understood, mostly due to the complex structures, phases, and interlayer stacking orders in the DW areas. Here, we explored the electronic states of DWs in the large-area CDW phase and mosaic phase of 1T-TaS₂b...