3-取代酚酮5位偶联产物的溴氧化成环反应

报道了采用溴氧化3-异丙烯基(艹卓)酚酮和3-肉桂酰基(艹卓)酚酮合成杂环并(艹卓)酮化合物的新方法。3-异丙烯基(艹卓)酚酮5位偶联产物1a～1f和3-肉桂酰基(艹卓)酚酮5位偶联产物3a～3d分别在吡啶介质中与过量溴作用生成5-取代苯偶氮基-7-溴-3-甲基-8-氢环庚并呋喃-8-酮2a～2f和6-取代苯偶氮基-2-苯基-8-溴-4,9-二氢环庚并吡喃-4,9-二酮4a～4d。     

Photoluminescence characteristics of GaN：Si

Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.     

化妆品前处理的研究

本文研究了压力罐一次性消解化妆品试样，并探讨了不同消化剂及其用量，消化时间及温度对其汞、砷、铅测定的影响。采用本文的前处理方法，再按国际规定方法测定汞、砷、铅的含量，其加标回收率分别为Hg95.0%-103.8%;As98.0%-109.0%;Pb98.0%-102.6%，6次测定标准物质中汞、砷、铅的结果均与其标准值吻合，相对标准偏差均小于5.0%。结果表明，该法为一种高效、经济、实用且较为理想的前处理方法。     

Doping in the Mixed Layer to Achieve High Brightness and Efficiency Organic Light Emitting Devices

Doping in the mixed layer was introduced to fabricate high brightness and high efficiency organic light emitting devices.In these devices,a copper phthalocyanine(CuPc) film acts as the buffer layer,a naphthylphenybiphenyl amine (NPB) film as the hole transport layer and a tris(8-hydroxyquinolinolate) aluminium (Alq3) film as the electron transport layer.The luminescent layer consists of the mixture of NPB,Alq3( to be called the mixed layer),and an emitting dopant 5,6,11,12-petraphenylnaphthacene (rubrene),where the concentration of NPB declined and the concentration of Alq3 was increased gradually in the deposition process.Adopting this doping mixed layer,the device exhibits the maximum emission of 49300cd/m^2 at 35V and the maximum efficiency of 7.96cd/A at 10.5V,which have been improved by two times in comparison with conventional doped devices.We attribute this improvement to the effective confinement of carriers in the mixed layer,which leads to the increase of the recombination efficiency of carriers.     

关于圆锥曲线与等比数列的一个性质

文[1]给出了圆锥曲线与等差数列的一个性质，本文给出圆锥曲线与等比数列的一个性质。     

有机-无机复合质子交换膜的制备与界面特性

有机-无机复合质子交换膜的开发是燃料电池用质子交换膜的一个重要研究方向,本文综述了有机-无机复合质子交换膜的制备方法,分析了两相之间的界面特性,并对这种复合膜的研究前景进行了展望.     

轨迹成型法加工球面光学零件面形精度分析

分析了轨迹成型法加工球面时影响零面形精度的多种因素，其中包括：工件回转轴与摆动轴不共面误差，工件回转轴与砂轮轴不共面误差，工件回转轴径向跳动、摆动误差，轴向窜动工件摆动轴的径向跳动以及砂轮的振动等因素对工件面形精度的影响。为了提高工件面形精度，首先应提高各回转轴和移动件的制造精度和减少配合误差，使其静刚度和动刚度提高，这是保证面形精度的最重要和基本的条件。     

从经典摩擦到纳米摩擦

８０年代末期纳米科学技术的诞生与发展使人们有可能研究纳米尺度上的摩擦．本文着重介绍９０年代纳米摩擦的新进展和新成果．     

GaAs/GaAlAs多量子阱反射型光调制器及自电光效应器件

采用分子束外延技术生长含有大周期数的GaAs/GaAlAs多量子阶(MQW)及分布布喇格反射器(DBR)的PIN结构器件。研究了量子限制斯塔克效应(QCSE),分布布喇格反射及非对称腔模(ASFP)效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响。给出我们研制的反射型光调制器及自电光效应器件的实验结果。对于常通型及常闭型调制器,其两态衬比度可达10dB.所研制的SEED器件,其导通光能耗低于10fJ/(μm)²,实现其光学双稳态及R-S光触发器工作。