Reynolds数22 000的孤立方柱绕流的大涡模拟

方柱绕流是典型的钝体绕流问题,蕴含了丰富的流体力学现象,对这类流动的准确预测面临着诸多挑战.采用自主发展的大涡模拟程序,对来流Mach数M=0.3,Reynolds数Re_D=22 000的绕孤立方柱流动进行了细致模拟,亚格子模型使用动力涡黏模型.对计算结果的分析表明,大涡模拟所得的平均流场及Reynolds应力分布与已有实验数据和直接数值模拟结果均吻合较好,验证了预测结果的可靠性;在此基础上对瞬态流场进行了研究,展示了计算条件下方柱绕流分离转捩及尾迹区旋涡交替脱落形成Karman涡街的全过程,为更细致的流动机理探索奠定了基础.      

面向用户感性需求的人机交互设计方案评价方法

针对人机交互产品设计方案感性评价问题,提出一种面向用户感性需求的犹豫模糊CRITIC-Taguchi评价方法.该方法首先在感性工学框架下,用犹豫模糊集(HFS)表征感性评价信息,以充分保留差异的用户感性认知与偏好;其次,鉴于感性评价行为受目标、底线、现状等多参照点影响的特点,在犹豫模糊背景下提出了一种依据三参照点的犹豫模糊Taguchi分段质量损失函数.同时,考虑到感性指标间的相关性,将体现指标间相互联系的CRITIC客观权重确定法推广至犹豫模糊背景,并继而建立一套犹豫模糊CRITIC-Taguchi评价模型.最后,以智能汽车中控界面设计方案优选为例,对该评价模型进行了实施、验证及对比分析,结果表明该模型具有较好的有效性和适用性.     

光助Fenton试剂氧化降解染料直接耐晒黑G的研究

文章研究了影响Fenton试剂氧化降解持久性有机污染物直接耐晒黑G的因素,如光源的选择、初始pH值、H₂O₂的用量、Fe2+的用量、阳离子交换树脂载体的引入等,通过研究确定了各因素的优化条件。研究结果表明：太阳光照能有效的促进直接耐晒黑G染料的降解脱色,大大缩短反应时间;引入阳离子交换树脂后,可增强Fenton氧化反应的活性,降解效果更好。     

GaN基紫外探测器的研究与制备

报道了用MOCVD方法在GaAs衬底上制作p-GaN/InGaN/n-GaN结构紫外探测器.我们对器件进行了测试分析.根据器件光伏信号强度和相位的测量结果,我们得到了该器件的能带结构图.我们还发现Ni/Au电极与p-GaN之间的接触表现出肖特基接触的特性.该探测器在入射光波长为375nm处的响应度大约为7.4×10-3A/W.     

X射线衍射法在泌尿系结石研究中的应用

泌尿系结石是一种世界范围的常见病、多发病。准确分析尿石的化学成分和物相,有助于了解泌尿系结石的形成机制。X射线衍射法(XRD)是进行泌尿系结石研究的最重要方法之一,用作定性分析时具有可靠性,用作定量分析时具有准确性,且检测简便迅速、灵敏度高、多组分和多晶态可一次性检测。文章综述了XRD在泌尿系结石定性和定量分析中的应用以及XRD与质子激发X射线发射光谱(PIXE)、X射线光电子能谱(XPS)和原子力显微镜(AFM)等联合分析尿石的研究进展。     

Numerical Study on Left-Handed Materials Made of Ferrite and Metallic Wires

Due to coupling effect, we show that it is difficult to realize the left-handed material by placing metallic wires directly into a ferrite matrix. However by introducing an insulating material round the metallic wires to decouple the direct interaction between the metallic wire and ferrite matrix, we have proposed two microstructures, which are shown by numerical simulation to have negative refractive indexes. The influence of microstructure on the transmission property is also examined.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

基于测试线法的风轮近尾迹辐射噪声研究

在风洞开口实验段,针对不同尖速比应用BSWA VS302USB振动噪声采集分析系统对水平轴风力机叶尖下游4个角度的测试线进行噪声测试.叶尖辐射声中的主要成分是叶片的旋转谐波声,其向风轮下游传播的过程中迅速衰减.在各测试线上,随着测点向风轮下游移动,叶轮辐射声迅速衰减,并在一定距离之后低于背景声,尖速比越高,风轮下游辐射...