保护介质对爆轰固相产物生成的影响

 通过爆轰合成超细金刚石实验，对装药在不同环境下引爆后得到的固相碳产物进行比较分析，研究不同介质如氮气、水、冰、遇热分解的盐等对爆轰产物中固相碳形成的影响，同时提出用石墨化程度来比较这种影响。结果显示，介质对爆轰产物中固相碳的石墨化和超细金刚石的保护有着重要的作用。几种介质中水的保护效果较好。     

2D NMR研究呋喃糖Grignard加成产物的绝对构型

通过对相应呋喃糖进行Grignard亲和加成合成了苯基及苄基取代呋喃糖.所得主要产物的结构和绝对构型通过二维核磁共振进行了研究.其结果通过计算机分子模拟优化,并进行了比较和确认.     

波长40—60nm的高电离态硫离子某些能级跃迁谱线的实验研究

波长４０－６０ｎｍ的元素高电离态离子光谱实验中,观测到１０多条光谱线,这些谱线是ＳＸＩ到ＳＸⅣ离子的一些激发能级发射的,其中９条谱线还没有人报道实验结果,实验分析结果与理论符合得较好。     

捷联惯性导航系统误差工程化分析方法

针对设计捷联惯性导航系统时系统指标要求合理选择惯性传感器的问题,提出一种捷联惯性导航系统误差分析方法,建立了系统在不同工作条件下的误差模型,给出了在设计捷联惯性导航系统时,纯惯性导航时间小于2 min、位置误差小于100 m时选择陀螺和加速度计的方法。     

低曝光条件下遥感相机微振动量检测

针对搭载平台颤振对遥感相机成像的影响,利用辅助高速面阵CCD相机拍摄高帧频图像序列,通过像元合并来补偿曝光时间不足,增加图像的亮度、对比度和信噪比,同时结合一种区域选择算法来选择用于计算的图像区域,最后使用灰度投影算法对振动位移量进行估计.实验数据表明,提出的改进算法误差为一个像元,在准确性和稳定性方面均明显优于原始算法.     

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging.     

Atomic structure and collision dynamics with highly charged ions

The research progresses on the investigations of atomic structure and collision dynamics with highly charged ions based on the heavy ion storage rings and electron ion beam traps in recent 20 years are reviewed. The structure part covers test of quantum electrodynamics and electron correlation in strong Coulomb field studied through dielectronic recombination spectroscopy and VUV/x-ray spectroscopy. The collision dynamics part includes charge exchange dynamics in ion-atom collisions mainly in Bohr velocity region, ion-induced fragmentation mechanisms of molecules, hydrogen-bound and van de Waals bound clusters, interference, and phase information observed in ion-atom/molecule collisions. With this achievements, two aspects of theoretical studies related to low energy and relativistic energy collisions are presented. The applications of data relevant to key atomic processes like dielectronic recombination and charge exchanges involving highly charged ions are discussed. At the end of this review, some future prospects of research related to highly charged ions are proposed.     

GaN FP-HEMTs中击穿电压与电流崩塌的关系

研究了钝化在抑制电流崩塌的同时，会引起HEMT器件击穿电压的下降.而采用场板结构的AlGaN/GaN场板HEMT器件(FP-HEMT)的击穿电压从46V提高到了148V，表明了场板对提高击穿电压有显著作用(3倍以上).接着，比较了FP-HEMT器件与常规HEMT器件，钝化后HEMT器件在应力前后的电流崩塌程度，得出了采用场板结构比之钝化对器件抑制电流崩塌有更明显作用的结论.从理论上和实验上都表明，采用场板结构能够很好解决提高击穿电压与抑制电流崩塌之间的矛盾. 关键词： GaN 场板 击穿电压 电流崩塌     

Ni54Fe19Ga27单晶的形状记忆和超弹性

本文研究了单晶Ni₅₄Fe₁₉Ga₂₇不同方向的形状记忆效应、超弹性和磁性. 研究发现,单晶样品具有良好的双向形状记忆效应.不同晶体学方向的相变应变随着热循环次数的变化而改变. 在外应力作用下,通过应力诱发马氏体相变,样品在[001],[110],[111]方向分别产生了3.3%, 2% 和3%的可回复应变平台.磁性测量结果表明马氏体的磁晶各向异性能约为4.8× 10⁵ erg/cm³,远远小于变体孪生所需机械应力能,因此磁场的作用是使磁矩发生转动而不是使孪晶界移动, 成功揭示了不能在NiFeGa中获得大磁感生应变的物理根源.     

自对偶引力的局部对称性与约束

在Ashtekar形式下，广义相对论的相空间被嵌入到复SU（2）Yang-Mils理论的相空间里．将一般场论中分析局部对称性与约束的方法推广到复的场论，从自对偶Palatini形式的位形空间构造出Ashtekar形式的相空间，进而讨论了位形空间上的局部对称性与相空间上的约束的关系． 关键词：