晶格气体模型在重离子物理中的应用

介绍了用于描述中高能重离子碰撞后期形成的热发射源系统行为的晶格气体模型的原理,并同渗透模型作了比较．综述了该模型在描写核态方程、相变和临界现象的新进展及不足之处． The Lattice Gas Model is introduced to describe the features of phase transition and critical phenomena that take place after the collision between heavy ions at intermediate or high incident energy. New progresses in application into equation of state, phase transition and critical pheonomena, and shortcomings of this model in itself are also presented.     

反质子与离子研究装置FAIR 介绍

未来几年, 在德国将会建成一个新的国际科学装置FAIR。FAIR 是一个综合性的粒子加速器系统, 它是反质子与离子研究装置(Facility for Antiproton and IonResearch)的简称。FAIR 建成后, 将能提供任意一种稳定或非稳定化学元素(从氢到铀)离子的高能量和高强度的束流, 且束流具有前所未有的高品质。FAIR 还将提供短寿命原子的次级束流和反质子束流。FAIR 涵盖了很广的与离子相关的科学目标, 建成后它将为全欧洲乃至全世界的科学家开展前沿研究提供优良条件。     

Effects of a carbon convection field on large diamond growth under high-pressure high-temperature conditions

Large diamond crystals were successfully synthesized by a FeNi-C system using the temperature gradient method under high-pressure high-temperature conditions. The assembly of the growth cell was improved and the growth process of diamond was investigated. Effects of the symmetry of the carbon convection field around the growing diamond crystal were investigated systematically by adjusting the position of the seed crystal in the melted catalyst/solvent. The results indicate that the morphologies and metal inclusion distributions of the synthetic diamond crystals vary obviously in both symmetric and non-symmetric carbon convection fields with temperature. Moreover, the finite element method was applied to analyze the carbon convection mode of the melted catalyst/solvent around the diamond crystal. This work is helpful for understanding the growth mechanism of diamond.     

切换电路系统的复杂行为及其机理

建立了不同类型Jerk电路之间存在开关的切换电路系统．基于平衡态分析,指出随参数的变化,两子系统分别存在着稳定的焦点以及由Hopf分岔导致其失稳而产生的周期振荡．考察了开关周期切换引起的各种复杂行为,分别给出了点／环和环／环切换周期振荡现象及其相应的产生机理．在不同的切换振荡过程中,切换点的数目随参数的变化会产生倍化序列,导致系统由倍周期分岔进入混沌,同时,由于参数的变化影响着子系统周期振荡的幅值,进而引起整个切换系统吸引子结构的变化．     

Majid double双积的一种广义型（英文）

设H为双代数.σ:HH→A为线性映射,其中A为左H余模余代数,且是带有左H-弱作用的代数.τ:HB→B为线性映射,其中B为右H余模余代数,且是带有右H-弱作用的代数.本文给出双边交叉积A#_σH_τ#B和双边smash余积构成双代数的充要条件.这一结构包括了著名的Radford双积(见[J.Algebra,1985,92(2):322-347]),Majid double双积(见[Math.Proc.Cambridge Philos.Soc.,1999,125(1):151-192]),以及王栓宏、焦争鸣和赵文正定义的交叉积(见[Comm.Algebra,1998,26(4):1293-1303]).     

Difference-frequency ultrasound generation from microbubbles under dual-frequency excitation

The difference-frequency (DF) ultrasound generated by using parametric effect promises to improve detection depth owing to its low attenuation, which is beneficial for deep tissue imaging. With ultrasound contrast agents infusion, the harmonic components scattered from the microbubbles, including DF, can be generated due to the nonlinear vibration. A theoretical study on the DF generation from microbubbles under the dual-frequency excitation is proposed in formula based on the solution of the RPNNP equation. The optimisation of the DF generation is discussed associated with the applied acoustic pressure, frequency, and the microbubble size. Experiments are performed to validate the theoretical predictions by using a dual-frequency signal to excite microbubbles. Both the numerical and experimental results demonstrate that the optimised DF ultrasound can be achieved as the difference frequency is close to the resonance frequency of the microbubble and improve the contrast-to-tissue ratio in imaging.     

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.     

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy(XPS) spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×10~5 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.     

Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

In this study, the unipolar resistive switching(URS) and bipolar resistive switching(BRS) are demonstrated to be coexistent in the Ag/Zn O/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies(VO) and metal-Ag conducting filaments(CFs) respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching(RS)characteristics(e.g., forming and switching voltages, reset current and resistance states) between these two modes based on VO- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.     

ICP-AES测定高纯碲中11种杂质元素

电感耦合等离子体原子发射光谱法 (ICP- AES)同时测定高纯碲中 11种杂质元素。用离峰扣背景法消除背景干扰 ,检出限能满足高纯碲中杂质元素的测定要求 ,加标回收率在 94 .0 %— 10 8%之间。