甲醇在不同形态ZrO2上吸附行为的FTIR研究

用FTIR技术考察了甲醇在不同形态氧化锆上的吸附和活化转化行为.甲醇吸附在无定型和四方氧化锆上生成线式和桥式甲氧基物种,而在单斜氧化锆上还出现锥桥式甲氧基物种.在单斜和无定性氧化锆上的桥式羟基活泼而四方氧化锆上的线式羟基活泼.氧化锆表面吸附的甲氧基物种在晶格氧的作用下进一步转化,在单斜和无定性氧化锆上生成甲酸盐,并且可以进一步氧化为碳酸盐物种;而在四方氧化锆表面,甲氧基物种可以直接氧化为碳酸盐物种,这表明四方氧化锆的晶格氧比其他两种氧化锆上的更为活泼.     

光谱法研究普利沙星与小牛胸腺DNA的结合作用

利用紫外光谱,荧光光谱及流体动力学方法,研究了普利沙星与小牛胸腺DNA的作用机理。讨论了不同浓度普利沙星与DNA作用的紫外光谱,荧光光谱,磷酸盐效应以及离子强度对两者相互作用的影响,测量了DNA的热变性温度和粘度。从紫外光谱图上看出DNA发生了明显的减色效应, 说明普利沙星可能与DNA发生作用。普利沙星的荧光光谱发生了有规律的猝灭,最大发射峰发生红移, 猝灭常数为3.1×104 L·mol-1, 为静态猝灭,表明普利沙星与DNA结合生成了二元复合物。磷酸盐效应表明普利沙星与DNA的磷酸基团不发生静电作用。普利沙星引起了DNA的热变性温度略微升高(≤7℃)和DNA粘度略微下降, 表明普利沙星与DNA之间不存在插入作用, 只是在DNA的外部发生沟槽作用。     

环境光对谷氨酸钠溶液近红外激光拉曼光谱的影响

探讨了环境光,对谷氨酸钠溶液的近红外激光拉曼光谱的影响。研究表明不同的环境光,自然光和室内荧光灯光,均会对近红外拉曼光谱产生不同的干扰效应,存在着特征谱峰,倒峰或尖锐正峰。虽干扰表现不同,但都有影响,不能忽略。建议在进行溶液近红外激光拉曼光谱检测时,须在暗室或暗罩中进行,以完全隔离环境光的影响。     

Characteristics of selective oxidation during the fabrication of vertical cavity surface emitting laser

Taking into account oxidation temperature, N₂ carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser (VCSEL) in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al_0.98Ga_0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.     

原子轨道方法研究He^2＋-He碰撞中电荷转移过程

应用双中心的原子轨道强耦合方法研究了He^2＋-He碰撞中的电荷转移过程，计算了随入射离子能量变化的单电子俘获总截面及各个次壳层的态选择截面，并与其它理论结果和实验结果进行了比较，发现我们的理论结果与实验很好的符合．针对中国科学院近代物理研究所最近的实验测量，我们也计算了电荷转移过程的微分截面．     

cBN晶体的Raman光谱测量

 用R1000激光共聚焦Raman光谱仪研究了高温高压合成棒中的立方氮化硼（cBN）晶体、原材料六方氮化硼（hBN）和催化剂。Raman光谱测量结果表明：伴随cBN晶体生长的散射峰,出现了两条全新的Raman散射峰（约1.088 cm^-1和约1.368 cm^-1）。该散射峰所对应的物质可能是在高温高压条件下hBN向cBN转变时生成的不完全产物——BN的一种新相。这一结果将有助于进一步讨论cBN的生长机理。     

Neutron powder diffraction and high-pressure synchrotron x-ray diffraction study of tantalum nitrides

Tantalum nitride(TaN) compact with a Vickers hardness of 26 GPa is prepared by a high-pressure and hightemperature(HPHT) method. The crystal structure and atom occupations of WC-type TaN have been investigated by neutron powder diffraction, and the compressibility of WC-type TaN has been investigated by using in-situ high-pressure synchrotron x-ray diffraction. The third-order Birch–Murnaghan equation of state fitted to the x-ray diffraction pressure–volume(P–V) sets of data, collected up to 41 GPa, yields ambient pressure isothermal bulk moduli of B'_0= 369(2) GPa with pressure derivatives of B 0= 4 for the WC-type TaN. The bulk modulus of WC-type TaN is not in good agreement with the previous result(B_0= 351 GPa), which is close to the recent theoretical calculation result(B_0= 378 GPa). An analysis of the experiment results shows that crystal structure of WC-type TaN can be viewed as alternate stacking of Ta and N layers along the c direction, and the covalent Ta–N bonds between Ta and N layers along the c axis in the crystal structure play an important role in the incompressibility and hardness of WC-type TaN.     

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

We report a type of thin film Al Ga In P red light emitting diode(RLED) on a metallic substrate by electroplating copper(Cu) to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power(LOP) by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm~2 and 35 A/cm~2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.     

铷原子磁光阱中超冷等离子体的形成和演化

在铷原子的磁光阱中,通过光电离冷原子方法和稠密里德堡原子的自发演化方法产生了超冷等离子体。磁光阱中冷却并囚禁了10^7个原子,温度约为500μK,之后用一束脉冲激光将冷原子电离或者激发至高里德堡态,通过调节脉冲激光的能量控制离子数量或者里德堡原子的数量。利用延迟斜坡电场或脉冲电场引出超冷等离子体中的电子,对超冷等离子体的形成和演化进行了研究,并利用库仑势阱模型对实验结果进行了解释。实验结果表明,由于来自长寿命里德堡原子的贡献,里德堡原子自发演化形成的超冷等离子体的寿命比光电离形成的超冷等离子体的寿命长。     

基于纠缠见证的路径纠缠微波检测方法

提出了一种基于纠缠见证的路径纠缠微波信号检测方法.路径纠缠微波是微波频段上的连续变量纠缠,介绍了利用微波压缩态和微波分束器制备路径纠缠微波的方法.根据部分转置正定判据以及2?2纠缠态密度矩阵的部分转置具有负本征值的性质,分别对常见的两种2?2纠缠进行了纠缠见证算符的构造,用于对两路信号是否为纠缠态进行判定.将连续变量纠缠的路径纠缠微波分解为大量2?2纠缠子系统叠加的纠缠态,证明其能够利用所构造的2?2纠缠见证算符来检测路径纠缠微波.同时分析了微波分束器的作用,并利用微波分束器设计了一种用于检测路径纠缠微波信号的实验方案,并在理论上分析了纠缠检测所得到的结果.结果表明,该方法能够有效检测路径纠缠微波信号,降低了检测的复杂度和计算量.本文的研究为纠缠微波的检测提供了思路.