PERMANENCE OF A NONAUTOMONOUS POPULATION MODEL

1.IntroductionPersistenceofpopulationsplaysanimportantroleinmathematicalecology.Inrecentyears)muchattentionhasbeengiventothepersistenceofnonautomonouspopulationmodelsll--6].[1]proposedtheconceptofpersistenceinthemeanofpopulations.Thisisofimportancebecausenotonlyitprovidesawaytocharacterizethepersistenceofpopula-nons,butalsothereareonlythresholdsbetweenpersistenceinthemeanandtheextinctionofpopulationsforgeneralnonautomonouspopulationmodels.In[2]thethresholdwasestablishedforone-dimensionalnonaut…     

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.     

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy(XPS) spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×10~5 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.     

Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

In this study, the unipolar resistive switching(URS) and bipolar resistive switching(BRS) are demonstrated to be coexistent in the Ag/Zn O/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies(VO) and metal-Ag conducting filaments(CFs) respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching(RS)characteristics(e.g., forming and switching voltages, reset current and resistance states) between these two modes based on VO- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.     

Ni54Fe19Ga27单晶的形状记忆和超弹性

本文研究了单晶Ni₅₄Fe₁₉Ga₂₇不同方向的形状记忆效应、超弹性和磁性. 研究发现,单晶样品具有良好的双向形状记忆效应.不同晶体学方向的相变应变随着热循环次数的变化而改变. 在外应力作用下,通过应力诱发马氏体相变,样品在[001],[110],[111]方向分别产生了3.3%, 2% 和3%的可回复应变平台.磁性测量结果表明马氏体的磁晶各向异性能约为4.8× 10⁵ erg/cm³,远远小于变体孪生所需机械应力能,因此磁场的作用是使磁矩发生转动而不是使孪晶界移动, 成功揭示了不能在NiFeGa中获得大磁感生应变的物理根源.     

十六烷基三甲基溴化铵-溴化钾-硝酸钠体系浮选分离铂(Ⅳ)

在pH3．0的克拉克-鲁布斯缓冲溶液中,铂（Ⅳ）以PtBr5^2-·2CTMAB＋的形式从含有0．59mol·L^-1硝酸钠、5．0×10^-3mol·L^-1溴化钾及3．0×10^-1mol·L^-1十六烷基三甲基溴化铵（CTMAB）的试液中定量浮选分离。此方法中浮选分离时试液的总体积定为10mL,其中合0．1mol·L^-1溴化钾溶液0．5mL,0．01mol·L^-1CTMAB溶液3mL及硝酸钠0．5g。试验结果表明：100／lg铂（Ⅳ）有效地与多达1．0mg的铬（Ⅲ）、锰（Ⅱ）、铝（Ⅲ）、镍（Ⅱ）、镓（Ⅲ）、铁（Ⅱ）及锌（Ⅱ）分离,铂（Ⅳ）的浮选率迭100％。此方法应用于已知含铂0．102％（质量分数）的Ni—Pt／Al2O3催化剂的分析,测得铂量的平均值为0．099％,测定值的相对标准偏差（n=7）为2．2％。     

YAlO_3:Nd~(3+)斯塔克子能级的能量值计算

用Racah-Judd的不可约张量方法计算了YAlO_3:Nd~(3+)全谱项的斯塔克子能级的能量值。根据计算结果,对YAlO_3:Nd~(3+)的子能级作了全面和较确切的归属。     

OLEDs中的激子及其高效利用

有机发光二极管（OLEDs）是基于有机半导体的发光器件,由于具有自发光、响应速度快、发光颜色可调、轻薄、大面积柔性可弯曲等优点,被认为是新一代的显示和照明技术。OLEDs是通过注入的电子和空穴复合形成激子并辐射发光的过程,因此如何有效利用激子,特别是三线态激子,已经成为OLEDs材料和器件研究的重要课题。其中,如何把三线态激子能量转换成单线态激子,并最终实现100%激子的荧光发射更具有应用价值,最近几年这方面的研究已经取得了显著进展。本文从OLEDs的工作原理和发光过程出发,详细介绍了制备高效率荧光OLEDs的有效方法及其最新进展,并对未来发展方向进行了展望,为OLEDs材料和器件的研究提供重要参考。     

一类新型水溶性膦配体及其钠盐的合成

在温和的反应条件下,以季Lin盐[Ph2P(CH2OH)2]^ Cl^-与含醚键和有机膦酸根的胺H2O3PCH2N CH2-CH2（OCH2CH2）nNH2(n=1,2,3)的曼尼希反应,高产率合成了含Ph2PCH2N=配位基团的水溶性膦配体,用NMR、MS、IR、UV和光电子能谱等对其结构进行了表征。     

头孢地尼的合成

头孢地尼的合成是用2－（2－氨基噻－4－基）－2－（Z）－（乙酰氧亚氨基）乙酰氯与7－氨基－3－乙烯基－3－头孢烯－4－羧酸二苯甲酯盐酸盐进行缩合,优化反应条件后,总收率为60％。