动力学椭圆代数A_(q,p,)()的Drinfeld流

从推广的Yang -Baxter关系“RLL =LLR ”出发 ,利用高秩高斯分解 ,得到了动力学椭圆代数Aq,p ,^π(gln〈)及其对应的Drinfeld流 .其中R ,R 是A(1)n -1面模型对应的谱参数有一关于代数中心平移的动力学R矩阵     

SU(2)规范场的一系列“无源”解——静点磁荷系的SU(2)势及U(1)势

场与源这一对矛盾双方如何对立与统一是经典电磁场及引力场理论中议论纷云的一个根本问题.非Abel规范场的静无源解(应该说是无外源,但以场自身为源)提供了一个不含奇异点的、场与源互相制约构成自洽稳定的有机统一体的一个值得注意的例子(孤粒子).现有的这种解都是在无外源(实际上以场的奇异点——磁荷为源)的吴杨单位磁荷解([4]的情况a)的基础上加上径向“形状因子”得到的,因此只限于总磁荷为单位值(本文取Schwinger量子化值为磁荷单位)的静同步球对称情况.为了弄清楚更一般     

Zn Belavin模型反射方程的多参数解

利用A_(n－1)⁽¹⁾面模型反射方程的对角解,得到了ZnBelavin模型反射方程的含有n+1个参数的解.当n=2时,其结果与侯伯宇等人给出的8项角反射方程的解是一致的.     

氢同位素化合物TiH2，TiD2和TiT2的电子

根据原子分子反应静力学和群论，确定TiH2，TiD2和TjT2的基电子状态为^3A2．应用基函数6-311G^＊＊和密度泛函理论B3P86方法，全电子计算了氢同位素分子及其钛化物的能量E、定容热容Cv和熵S应用电子振动近似理论，即用单个分子TiH2，TiD2和TjT2中的电子和振动能量和熵近似代表他们处于固态时的能量和熵,计算所得到的金属钛的氢化热力学函数△Hc^0，△S^0，△G^0以及平衡压力与温度的关系，与文献符合很好，这表明电子振动近似理论的可应用性，选用金属钛作为中子靶是很正确的。     

中药白茅根中金属元素的含量测定

火焰原子吸收光谱法测定中草药白茅根茎部的Fe、Cu、Zn、Mn、Ca、Mg,方法简单、精密度好、回收率在92.0%-104.4%之间,相对标准偏差(RSD)小于1.8%,结果令人满意.     

显微镜工作台闭环控制系统的设计与实现

高精度工作台控制系统是现代自动显微系统的重要组成部分,其精度直接影响显微镜对样品的检测质量。介绍了一种基于AT89C52单片机的显微镜工作台闭环控制系统的设计方案。工作台移动时作为检测元件的光栅输出脉冲信号。单片机控制电路实现脉冲的计数并计算误差值,控制步进电机进行反馈补偿。步进电机通过细分驱动模块可以以四种不同的步距驱动工作台移动,以实现显微镜对工作台移动速度的不同需要。8位数码管实时显示工作台移动的实际位置。实验结果表明,该系统的重复定位精度可达到0.020mm,可满足显微镜对控制工作台的要求。     

HIRFL-CSRm内靶实验终端CsI(Tl)电磁量能器性能模拟

基于GEANT4模拟了HIRFL CSRm内靶实验终端的CsI(Tl)电磁量能器系统,给出了CsI电磁量能器的最佳设计参数及可能达到的性能.结果表明,设计的CsI(Tl)电磁量能器系统能够满足所研究的物理要求. Based on the GEANT4, the performance of the electromagnetic calorimeter (EMC) of the internal-target detector at HIRFL-CSRm is simulated. The simulation results show that 1.5%—3% of the energy resolution σ_E/E and 2° of the polar angular resolution σ_θ can be obtained. The invariant mass of the π~0 decay can be reconstructed well. The performance can meet the requirement of studying the proposed physics at HIRFL-CSRm.     

β-delayed neutron decay of 21N

The β-delayed neutron and γ spectra of neutron-rich nucleus ²¹N using β-γ and β-n coincidence measurements were presented in this paper. Thirteen new neutron groups ranging from 0.28 MeV to 4.98 MeV and with a total branching ratio 88.7±4.2% were observed. One γ transition among the excited states of ²¹O, and four γ transitions among the excited states of ²⁰O were identified in the β decay chain of ²¹N. The ungated half-life of 83.8±2.1 ms was also determined for ²¹N.     

Image charge effect on the light emission of rutile TiO_2(110) induced by a scanning tunneling microscope

The plasmon-enhanced light emission of rutile TiO_2(110) surface has been investigated by a low-temperature scanning tunneling microscope(STM). We found that the photon emission arises from the inelastic electron tunneling between the STM tip and the conduction band or defect states of TiO_2(110). In contrast to the Au(111) surface, the maximum photon energy as a function of the bias voltage clearly deviates from the linear scaling behavior, suggesting the non-negligible effect of the STM tip on the band structure of TiO_2. By performing differential conductance( dI/dV) measurements, it was revealed that such a deviation is not related to the tip-induced band bending, but is attributed to the image charge effect of the metal tip, which significantly shifts the band edges of the TiO_2(110) towards the Femi level(E_F) during the tunneling process. This work not only sheds new lights onto the understanding of plasmon-enhanced light emission of semiconductor surfaces, but also opens up a new avenue for engineering the plasmon-mediated interfacial charge transfer in molecular and semiconducting materials.     

Derivative of Electron Density in Non-Equilibrium Green's Function Technique and Its Application to Boost Performance of Convergence

The non-equilibrium Green＇s function （NEGF） technique provides a solid foundation for the development of quantum mechanical simulators. However, the convergence is always of great concern. We present a general analytical formalism to acquire the accurate derivative of electron density with respect to electrical potential in the framework of NEGF. This formalism not only provides physical insight on non-local quantum phenomena in device simulation, but also can be used to set up a new scheme in solving the Poisson equation to boost the performance of convergence when the NEGF and Poisson equations are solved self-consistently. This method is illustrated by a simple one-dimensional example of an N＋＋ N＋ N＋＋ resistor. The total simulation time and iteration number are largely reduced.