体视2D-3cPIV相机标定方法研究

基于针孔相机成像模型,利用共线方程建立了像平面坐标与粒子三维空间坐标之间的映射关系,在此基础上采用Tsai’s算法开展了相机内外参数标定方法的研究。使用微位移机构负载二维平面标定板完成了片光厚度内多个位置的单视场非共面标定。改进后的Wong-Trinder算子提高了标定板上目标像中心的定位精度。利用标准图像对其进行了仿真实验。结果表明,该标定方法具有标定速度快、精度高的特点,适合于多种流场的2D-3cPIV测量。     

新型红光电磷光芴-alt-咔唑共聚物的合成与发光性能

通过Suzuki聚合反应合成了一系列以芴-alt-咔唑为主链, 铱配合物为侧链的深红色电磷光共轭聚合物. 发光器件结构为ITO/PEDOT∶PSS/PVK/Copolymer/Ba/Al, 基于共聚物PFCzIrNiq-1的器件在电流密度为9.4 mA/cm2时, 最大外量子效率为0.23%, 最大发射波长为680 nm.     

太阳能电池在微生物燃料电池中的光电催化性能研究

微生物燃料电池（microbialfuelcell,MFC）是利用电化学技术将微生物代谢能转化为电能并可同时降解废水的一种装置．本文针对目前MFC输出功率密度小、工作效率低等缺点,提出了利用半导体光催化和微生物催化协同作用构建新型MFC体系的设想,即将半导体太阳能电池串入MFC体系,组成“光电池．微生物电池”新型电池体系．实验结果表明,在光照的作用下,新型MFC体系的开路电压、短路电流和最大输出功率密度,与普通MFC体系相比,均有了明显的提高．光电催化作用的引入,有效地改善了MFC体系阴极的接受电子的能力,使阳极提供电子的能力得到最大限度的发挥,既给MFC体系的运转提供了一部分动力,也为MFC体系提高污染物的降解速率提供了基础．此项研究对解决能源危机和环境污染具有重要意义．     

电子在超短激光脉冲修正场中的动力学特性研究

给出了一种精确描述超短、紧聚焦激光脉冲的新方法，其思路是根据两个无量纲小量ε=1/(ω0t0)和s=1/(k0w0)（其中ω0=ck0为中心振荡频率，t0为脉冲延迟时间，w0为激光束腰半径）进行展开来计算脉冲的高阶修正场.在激光束近轴近似表达式的基础上，给出了高斯脉冲一阶修正场的解析表达式，并研究发现其振幅和相位相对于零阶修正场（即长脉冲近似）的修正量都在ε的量级甚至更小.另外对电子在超短高斯脉冲一阶修正场中的动力学特性研究发现：对于ω0t0>20的情况，零阶修正场可以正确地描述电子被光场加速的特性；当ω0t0<20时，则需要采用高阶修正场. 关键词： 超短激光脉冲 激光加速     

High-Order Temporal Corrected Fields of Ultra-Short Laser Pulses and Laser-Driven Acceleration

Up to third-order temporal correction in terms of a small dimensionless temporal parameter ε=1/（ωoto） （ω0=ck0 the central oscillatory frequency, to the pulse duration of half period）, the field expressions of ultra-short focused laser pulses are explicitly presented. To evaluate the correction efficacy, electric amplitudes of zeroth-order and higher-order corrected fields are compared for different pulse durations. Furthermore, electron interaction with ultra-short laser pulses is simulated using both the zeroth-order and higher-order corrected field equations. Our simulation results show that the third-order correction terms should be considered for investigating the interaction if the laser pulse duration decreases to a few optical periods.     

Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well

The InGaN/GaN blue light emitting diode(LED) is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions(above 90%) under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.     

旋转磁场对凝固组织形成的影响

研究了旋转磁场作用下Pb-45%Sn亚共晶合金的凝固组织.实验发现,旋转磁场的频率恒定时,凝固组织的晶粒尺寸随着磁场强度的增强而线性减小,同时,初生相的生长形态从枝晶转变为椭球状.X射线测试结果表明,初生相Pb发生了点阵膨胀,并且晶格常数随着磁场强度的增强先变大后减小,磁场强度在此存在一个临界值.能谱分析显示,随着磁场强度的增强,初生相Pb内Sn的含量逐渐降低.根据电磁场理论和扩散定律,对上述现象进行了理论分析,揭示出旋转磁场引起了液相强烈流动,加快了溶质原子的扩散以及对熔体的加热效应,导致了形核率的提高和长大速度的降低. 关键词： 旋转磁场 液相流动 晶格常数 溶质分配     

Investigation of Electron Injection Parameters in Vacuum Laser Acceleration

We investigate the parameters such as the energy gains, comparisons for linearly and circularly polarized laser fields, the electron incident polarization azimuth angle, the electron incident crossing angle, and the electronincident momentum, etc., which are crucial for experimental test of the vacuum laser acceleration scheme in capture and acceleration scenario (CAS) [see, e.g., Phys. Rev. E 66 (2002) 066501]. Physical explanation of these features has been presented based on the CAS scheme. The results show that all those parameters are in the reasonable ranges obtainable by presently experimental facilities.     

Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm2and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures' photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.     

Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters

We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron-hole wave function remains at a high level (larger than 90%). Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.