Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

Gate-modulated generation–recombination（GMGR） current IGMGRinduced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor（n MOSFET） is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGRcurves are ascribed to the changes of the electron density and hole density at the interface, NSand PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients（m and t）. The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.     

Zn(0.6Mn0.2Ni0.2Fe2O4/聚邻甲基苯胺复合物的制备和电磁性能

用化学沉淀法和原位聚合法分别制备了Zn0.6Mn0.2Ni0.2Fe2O4铁氧体纳米粒子和Zn0.6Mn0.2Ni0.2Fe2O4铁氧体/聚邻甲基苯胺复合微粒(ZMNF/POT).通过现代测试技术表征了样品组成、结构、形貌和电-磁性能.结果表明,POT对ZMNF粒子具有较好的包覆作用;复合物电导率与POT的含量成正比,而磁性能与ZMNF粒子的含量相关;在1～15MHz频段内,POT和ZMNF/POT复合物的介电损耗与其电导率表现出一致性;复合物具有可观的磁损耗,比磁介质型ZMNF的大,且ZMNF含量为31.74 wt%的复合物的磁损耗最大,有望作为屏蔽和吸收电磁波材料获得应用.     

GaAs基底上金纳米粒子的二维组装及其表面增强喇曼散射活性

利用巯基苯胺作耦联分子,成功地将Au纳米粒子组装到GaAs(100)表面上,并且用TM-AFM观察了纳米粒子在表面上的分布情况.Raman研究表明,该基底显示出表面增强喇曼散射活性.     

对化学反应数据分类获取反应知识的新方法

尽管已有大量化学反应数据可供使用,但化学家仍常常感到很难便捷地从中得到所需的信息.这主要是由于反应数据库基于结构的检索方法与化学家解决问题的方法相去甚远.为解决这一问题而发展了一种通过对反应进行二级分类得到精细描述反应知识的层次模型的方法.第一次分类时不同的同类反应都在由一组普适性好的称作反应结构一级描述符构成的空间中进行.在第一次分类结果的基础上,得到每一类反应的公共结构特征作为第二次分类的结构描述符,利用它们进行更精细的分类,即可从原始反应数据中得到所需的基核反应.由特定反应、基核反应和基型反应就可将反应知识更合理地组织在同类反应知识库中,使它们得到更好的利用.