Experimental Evidence of the Rapidly Increasing Neutron Yields in Proton—Induced Reaction on Heavy Target Across 0.6—1 GeV

The independent yield distribution of the Hg isotopes,measured for the reaction of 600MeV ^18O projectile with a ^nat.Pb target,is converted to 18O 208Phb system and is compared with an Hg-isotope distribution from the spallation reaction of 1A GeV^208Pb on proton.The comparison shows the differences between the two distributions on the production cross sections,isotope-distribution widths as well as their shapes.A great increase of the neutron-deficient Hg isotope yield with increase of bombarding energies of protons from 600MeV to 1GeV is derived.This fact results in an experimental evidence for rapid increasing neutron yields with rising proton bombarding energy from 0.6GeV to 1 GeV.     

Direct Current Hopping Conductivity in One—Dimensional Nanometre Systems

A one-dimensional random nanocrystalline chain model is established.A dc electron-phonon-field conductance model of electron tunnelling transfer is set up,and a new dc conductance formula in one-dimensional nanometre systems is derived.By calculationg the dc conductivity,the relationship among the electric field,temperature and conductivity is analysed.and the effect of the crystalline grain size and the distrotion of interfacial atoms on the dc conductance is discussed.The result shows that the nanometre system appears the characteristic of negative differential dependence of resistance and temperature at low temperature.The dc conductivity of nanometre systems varies with the change of electric field and trends to rise as the crystalline grain size increases and to decrease as the distroted degree of interfacial atoms increases.     

A New Kind of Buffer Layer of TiO2 Self—Assembled Material in Organic Electroluminescent Devices

A new kind of TiO2 self-assembled nanometre material has been fabricated and is used as a hole-injecting buffer layer in organic electroluminescent devices.The luminance and the efficiency of a devicy individually rises from 1500cd/m^2 to 5000cd/m^2 and from 2.0cd/.A to 3.92cd/A at the current density of 100mA/cm^2.The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hloe transprting layer to the anode.     

氘氚化锂分解残渣中微量氚的回收

氘作同位素交换气对除氚后的新鲜氘氚化锂残渣[主要成分是硅锂化合物和二氧化硅，渣中含氚约为0．9443mg／g(渣)]中的微量氚进行氚的计量与回收，为氘氚化锂残渣中氚的回收提供技术支持。     

闪光灯泵浦的Nd:KGd(WO4)2激光器

报道了用闪光灯泵浦的掺钕的钨酸钆镓(Nd³⁺:KGd(WO₄)₂激光器.在重复频率1Hz,脉宽120μs的灯泵下,测量了不同透过率下激光输出能量,获得最大输出能量384mJ,斜率效率1.0%,外推阈值0.54J.在调Q运行时,Nd:KGW晶体的斜率效率为0.16%,最大输出能量46mJ.     

形变双奇核^180Ir的高自旋态的实验研究

利用^154Sm(^31P,5nγ)^180Ir反应产生并研究了双奇核^180Ir的高自旋态，实验中进行了^180Ir核的在束γ测量，包括γ射线的激发函数测量、X-γ和γ-γ符合测量，首次建立了双奇核^180Ir由5个转动带构成的能级钢图，依据从实验数据中提取出的带内B（M1）／B（E2）值与理论计算值的比较，以及相邻双奇核的带结构特征，给出了转动带的准粒子组态，在推转壳模型的理论框架中，定性地讨论了转动带结构特征的组态依赖性。     

相对论平均声理论对新核素^259Db及其α衰变链的研究

利用相对论平均场理论系统地探讨了新核素^259Db及其α衰变链的性质和结构以及对关联效应与形变效应的影响。考虑对关联影响后的变形相对论平均场理论成功再现了实验的Q。并揭示了所研究的α衰变链具有较大的形变。在此基础上进一步讨论了新核素^259Db及其α衰变链的形变单粒子能级结构。     

液体可视图象序列中杂质小目标的检测方法

在分析红外图象和视图象差异的基础上，研究了一种适用于可视图像序列的运动小目标检测算法。受目标影响的象素点具有较弱的时间相关性，即相对普通象素点有较大的时间方差，根据此特征，用管道更新的方法产生新方差图象序列，再用管道更新的方法累积，增加信噪比，然后用基于统计均值的自适应门限方法分割出目标，最后将原图象的梯度倒数作为象素点强度的加权，有效地抑制灰度突变边界的传感器噪音，保存目标点。     

提高大气吸收光谱测量分辩率的新方法

在仪器函数和吸收线型已知的情况下，提出了一种非线性拟合退卷积法，用于提高气体吸收测量的光谱分辨率。数值模拟和实际应用都表明：该方法用于室内气体吸收光谱的测量，在保持吸收线型不变的情况下，可以显著地提高测量的光谱分辩率，降低测量噪声。将该方法用于怀特池中模拟大气吸收光谱测量，减小了激光线宽对测量结果的影响，获得了比较理相的结果。     

气流混合对生长GaN：Si膜性能影响的研究

用金必有机化学气相沉积技术在三种不同型号的反应管中生长了GaN:Si膜。通过对样品的光电及结晶性能的分析，研究了气流混合时间不同对GaN:Si膜性质的影响。结果表明：合理的Ⅲ、Ⅴ族气流混合对提高GaN:Si膜的光电及结晶性能很重要。Ⅲ、Ⅴ族气流混合太早，气流混合时间长，GaN:Si膜的黄带与发射强度之比较大，X射线双晶衍射半高宽；Ⅲ、Ⅴ族气流混合太晚，尽管可减少预反应，但气流混合不均匀，致使GaN:Si膜的发光性能及结晶性能变差。使用Ⅲ、Ⅴ族气流混合适中的反应管B生长、获得了光电及结晶性能良好的CaN:Si单晶膜。