升温程序对6H-SiC晶体生长初期籽晶石墨化的影响

本文利用有限元方法模拟不同升温程序对籽晶石墨化的影响,计算表明籽晶表面石墨化层厚度是由“倒温度差”区间的温度、持续时间和“倒温度差”绝对值综合决定.在升温程序初期可以采用较小功率阶梯加热,迅速升温节约时间;中期可以采用从现有功率线性加热至额定功率,这样使得籽晶原料“倒温度差”区间内温度值变小且减缓反应;同时还使“倒温度差”绝对值减小,抑制籽晶和原料间的输运.同时籽晶石墨化实验通过元素线扫描测量出石墨层厚度,也证实了理论计算的结果.     

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.     

WPS软件在物理实验数据处理中的应用

WPS软件作为金山公司的一款应用软件,在物理实验的数据处理方面有着广阔的应用前景。重点介绍WPS在用霍尔元件测螺线管轴向磁感应强度和计算不确定度的实验数据处理,如制表、绘图、公式运算、结果分析等方面应用,软件很好的从表格、图像等方面展示出了实验结果,表明了WPS软件在数据处理方面的很好功能。     

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

In this paper, the effect of floating body effect(FBE) on a single event transient generation mechanism in fully depleted(FD) silicon-on-insulator(SOI) technology is investigated using three-dimensional technology computer-aided design(3DTCAD) numerical simulation. The results indicate that the main SET generation mechanism is not carrier drift/diffusion but floating body effect(FBE) whether for positive or negative channel metal oxide semiconductor(PMOS or NMOS). Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking(IS) layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.     

连续可变偏振光注入垂直腔面发射激光器的偏振开关及双稳特性

基于垂直腔面发射激光器(VCSELs)的自旋反转模型(SFM),理论研究了连续可变偏振光注入VCSEL所产生的偏振开关及双稳特性。研究结果表明,在合适的注入参数设置下,通过连续正向扫描和反向扫描注入光偏振角,VCSEL的偏振分量可产生由偏振角度诱导产生的偏振开关(PS)及偏振双稳(PB)效应,且正反向PS点位置随扫描周期的变化而发生偏移,进而导致PB区域宽度发生改变。当注入强度一定时,正反向PS点位置随扫描周期的增大呈现相反的变化趋势,且更小的扫描周期和更大的频率失谐均有助于增加PB区域的宽度;对于频率失谐给定的情形,注入光强度的变化对PS和PB宽度也有着较大的影响,较小的注入强度及扫描周期更易于PB宽度的扩展。当给定注入强度和频率失谐时,正反向PS点所对应的偏振角度随偏置电流的增强均呈现近似增大的趋势,而PB区域宽度则表现出较大的起伏,且扫描周期越大,对应的PB宽度越小。此外,自旋反转速率也会影响VCSEL输出偏振分量的PS和PB特性,当注入参数一定时,较小的自旋反转速率更易于产生较大的PB宽度。     

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation.Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters,the temperature plays different roles in the SET production and propagation.The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases.The investigation provides a new insight into the SET mitigation under the extreme environment,where both the high temperature and the single event effects should be considered.The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

不确定结构动力区间分析方法研究

将结构中的不确定性参数用区间数来表示,建立了系统的区间动力特征方程和动力控制方程.通过将Monte Carlo方法引入到区间分析中来,并改进了一般Monte Carlo方法在区间模拟中存在的缺陷,对区间动力特征方程和动力控制方程进行了求解,得到了结构的固有频率、位移响应和应力响应的区间计算结果.算例表明改进的Monte Carlo方法求解简单,具有普适性,能够给出较高精度的响应区间.     

新型两亲性含糖嵌段聚合物的合成与自组装

以β-环糊精(β-CD)和2-乙基-2-噁唑啉(EtOz)为原料, 通过活性端基化学偶联法制备了乙酰麦芽七糖/聚(2-乙基-2-噁唑啉)两嵌段聚合物(AcMH-b-PEtOz), 借助核磁共振氢谱、红外光谱和凝胶渗透色谱等手段证实了产物的化学结构. 采用核磁共振氢谱、荧光光谱、透射电子显微镜、动态光散射及紫外-可见分光光度等方法探讨了产物在水溶液中的自组装行为. 结果表明, 所得嵌段聚合物直接溶于水后可通过自组装形成纳米球形“核-壳”结构胶束, 同时具有温度响应性. 所得聚合物的临界胶束浓度(cmc)为4~7 mg/L, 平均粒径(d)为83~115 nm, 临界相转变温度(LCST)为49~64 ℃, 并且均可通过PEtOz的链长进行调控.     

主副垂直腔面发射激光器动力学系统混沌输出的时延特征及带宽分析

基于垂直腔面发射激光器(VCSEL)的自旋反转模型, 数值研究了由一个光反馈VCSEL (定义为主VCSEL, M-VCSEL)输出的混沌光单向注入到另一个VCSEL (定义为副VCSLE, S-VCSEL)所构成的主副VCSELs系统的混沌动力学特性, 分析了注入强度、M-VCSEL与S-VCSEL之间的频率失谐以及M-VCSEL所受到的光反馈强度对系统混沌输出时延特征(包括强度时延特征(I-TDS) 和相位时延特征(P-TDS))以及输出带宽(BW)的影响. 结果显示: 通过调节注入强度和频率失谐, 该系统混沌输出的两个偏振分量(X-PC和Y-PC)的P-TDS和I-TDS可以同时得到抑制; 进一步分析注入强度和频率失谐对混沌BW的影响, 发现在较大负频率失谐区域, 系统可输出BW超过30 GHz 的X-PC和Y-PC混沌信号; 结合系统混沌输出信号的TDS与BW在注入强度和频率失谐参量空间下的演化特性, 可确定宽带宽、低时延特征混沌信号输出的参量空间区域. 此外, 通过合理调节M-VCSEL 所受到的光反馈强度, 可以显著优化系统的混沌输出信号质量.