横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

第二配体对Sm(DBM)3掺杂的PMMA样品发光的影响

分别使用phen（1,10-邻菲咯啉）、TOPO（三正辛基氧化磷）、TPPO（三苯基氧化磷）作为第二配体与Sm（DBM）3（DBM：二苯甲酰甲烷）相互作用,合成了相应的配合物,然后分别将其掺入MMA中,进行聚合得到了固体样品。测量了不同第二配体样品及无第二配体样品的激发和发射光谱,对谱峰做了指认。发射谱中主要发射峰均为Sm^3＋的特征发射,有机配体的发光带很弱,说明从有机配体到稀土发光中心的能量传递非常有效。监测Sm^3＋离子644nm发射峰（^4G5/2→^6H9/2）测量了样品的激发光谱。结果显示,第二配体的加入改变了有机配体的能级结构,激发边出现明显的移动,同时紫外区的激发效率发生了变化,对发光产生了显著的影响。还测量了上述样品中Sm^3＋的^4G5/2能级的发光衰减曲线,拟合出该能级的跃迁寿命,针对不同第二配体的情况进行了比较分析。实验结果表明,第二配体的共轭性和化学键匹配对发光强度影响很大,在我们的结果中,第二配体为TPPO时发光效率最高。     

液相色谱-离子阱质谱法测定香菇中的核苷酸

采用液相色谱-电喷雾串联质谱法检测香菇中核苷酸。流动相为甲醇和0.1%甲酸溶液,采用梯度洗脱程序,色谱柱为Zorbax XDB-C18（150×2.0mmid,5μm）,流速为0.2mL·min-1。以准分子离子和二级碎片离子对样品中4种核苷酸进行定性和定量,方法的检测限分别为0.500、0.050、0.020、0.010μg/g,相关系数分别为0.9952、0.9967、0.9935、0.9987,相对标准偏差范围为3.25%—9.45%,样品的回收率为78.2%—115.3%。该法快速、灵敏度高、重现性好。     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

比例关系在解答2005高考物理试题中的应用

数学是解决物理问题的工具，比例关系在应用中特别重要；2005年全国高考物理试题涉及计算的，有些可以应用比例关系解决，并使解题过程简洁明快．     

嵌段共聚物溶致液晶相中水的2H-NMR动力学分析

采用D₂O 的²H-NMR线型和弛豫分析了PEO-PPO-PEO/D₂O/对二甲苯体系的层状和六角液晶相的动力学行为. 通过实验测得了两个不同体系的自旋 晶格弛豫时间T₁、自旋-自旋弛豫时间T₂和²H-NMR 谱. ²H-NMR 谱均为具有四极劈裂的粉末谱线型，且在谱图的中心，β_LD=54.7°时存在一个倒峰. 倒峰的出现直接表明引起体系中弛豫的主要动力学过程处于极窄化区域. 采用NMR弛豫模型，通过调节动力学参数，使理论模拟的²H-NMR谱、弛豫时间、倒峰的大小与实验的对应量相吻合，求得了体系的动力学参数.     

Generation of multi-wavelength light sources for optical communications in aperiodic optical superlattice

A method for generating multi-wavelength light source is theoretically investigated by optical parametric oscillation (OPO) in aperiodic optical superlattice (AOS). The effects of domain errors caused by the room-temperature electric poling process are checked. The relationship between the linewidth and the block length is also discussed.     

r-过程路径核β——衰变半衰期的估算

分析了20 < A < 190范围内丰中子核β衰变的实验数据,根据半衰期随质子数、中子数以及衰变能变化所呈现的壳效应和对效应等特点,提出了一种有效估算丰中子核β衰变寿命的公式。新的计算公式形式简单包含了较少的参数、计算量小。用该公式能较为准确地再现丰中子核的β衰变半衰期。用RIKEN最新测量丰中子核半衰期检验了该公式的外推能力,本工作可以为r-过程研究提供可靠的输入数据。Experimental data of the β--decay half-lives for the nuclei with atomic number between 20 and 190 are investigated. We have systematically studied the shell effects and pairing effects on β--decay half-lives versus the decay energy Q and nucleon numbers (Z, N). An empirical formula has been proposed to calculate the β--decay half-lives of neutron-rich nuclei. The empirical formula is simple and has relatively few parameters. Experimental β--decay half-lives of the neutron-rich nuclei are well reproduced by the new formula. In addition, the extrapolating capacity of this formula has been checked with the very recent experimental data from RIKEN. The predicted half-lives for r-process relevant nuclei with the current formula can be served as the reliable input of r-process model calculations.     

莫桑比克摩根石的谱学特征研究

近几年摩根石凭借它独特的色彩悄然兴起。采用常规仪器测试、激光剥蚀等离子质谱(LA-ICP-MS)、紫外-可见吸收光谱(UV)、红外光谱(IR)和拉曼光谱(Raman),对产自莫桑比克的摩根石基本性质、化学成分特征、谱学性质进行了较为详细的分析。紫外-可见光谱获得样品主波长、饱和度、明度等相关颜色参数;成分测试显示样品摩根石中Li,Rb,Cs,Mn等含量较高,计算所得到的晶体化学式为Be_3.2090Al_2.0757Li_0.425Si_5.664O₁₈(Na_0.1420Cs_0.1316);红外光谱显示,摩根石的结构振动区主要在指纹区400～1 200 cm-1,其中900～1 200 cm-1为Si—O—Si环的振动区,550～900 cm-1为Be—O振动区,而450~530 cm-1为Al—O振动区。由于摩根石中的Cs元素的含量较高,而Cs为原子序数较高的元素,其存在可能令Si—O—Si环振动谱峰向低频位移。拉曼光谱显示1 065 cm-1为Si—O非桥氧伸缩面内振动,1 000 cm-1左右为Be—O的非桥氧伸缩面外振动,685 cm-1为Si—O—Si的变形面内振动,400 cm-1为O—Be—O的面外弯曲振动,在390 cm-1处为Al—O的面外变形振动,在320 cm-1处为Al—O的面外弯曲振动。     

The doping effects of BiFe_1-xCo_xO₃（x=0.0-0.8） in layered perovskite Bi₄Ti₃O₁₂ ceramics

Bi5Fe1-xCoxTi3O15(x = 0.0, 0.2, 0.4, 0.5, 0.6, and 0.8) multiferroic ceramics are synthesized in two steps using the solid state reaction technique. X-ray diffraction patterns show that the samples have four-layer Aurivillius phases. At room temperature (RT), the samples each present a remarkable coexistence of ferromagnetism (FM) and ferroelectricity (FE). The remnant polarization (2P r ) reaches its greatest value of 14 μC/cm 2 at x = 0.6. Remnant magnetization (2M r ) first increases and then decreases, and the greatest 2M r is 7.8 menu/g when x = 0.5. The magnetic properties for x = 0.4 are similar to those for x = 0.6, indicating that the magnetic properties originate mainly from the coupling between Fe 3+ and Co 3+ ions, rather than from their own magnetic moments.