氧化亚氮3000—0200和1001—0110跃迁带在高温下的线强度

采用乘积近似法计算了氧化亚氮分子的总配分函数，其中转动配分函数考虑了离心扭曲修正，振动配分函数采用谐振子近似. 利用计算所得的配分函数和实验振动跃迁矩平方及Herman-Wallis因子系数，计算了氧化亚氮3000—0200和1001—0110跃迁带在常温和高温下的线强度. 结果显示，当温度高达3000K时，计算所得线强度与实验值及HITRAN数据库提供的结果仍符合较好. 这表明高温下的分子配分函数和线强度的计算是可靠的. 还进一步计算了氧化亚氮3000—0200和1001—0110跃迁带在更高温度(40 关键词： 氧化亚氮 配分函数 线强度 高温     

电子学领域的群速超光速实验

研究了电信号在阻抗周期失配的光子晶体结构中的群速超光速传播问题,构建了一种具有周期失配性的结构,此种阻抗失配引起非正常色散以及在8 MHz附近出现禁带.正弦调幅信号和窄脉冲信号分别被送入两种超光速实验装置. 实验结果表明,正弦调幅信号在禁带出现群速超光速,群速最大可达到3.52倍光速,而窄脉冲信号始终以正常速度传播.     

重离子冷却储存环CSRm双电子复合实验研究类锂36,40Ar15+离子同位素移动

配备电子冷却装置的重离子储存环为开展高电荷态离子的双电子复合（dielectronic recombination,DR）精密谱学研究提供了绝佳的实验平台。本工作在兰州重离子加速器冷却储存环主环（HIRFL-CSRm）上开展了类锂36,40Ar15+离子的双电子复合实验,实验观测了电子-离子质心系能量范围为0~35 eV的双电子复合速率系数谱。通过外推法获得了36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2的跃迁能量。同时利用GRASP2K程序理论计算了36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2跃迁的质量移动因子和场移动因子,进而得到双电子复合谱的同位素移动值。36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2同位素移动分别为0.861 meV和0.868 meV。它们均小于目前CSRm上双电子复合实验的实验分辨为~10 meV,进而解释了实验测量的DR谱上未能观察到同位素移动的原因。然而,高电荷态离子的同位素移动场效应与原子序数Z5成正比,因此,在重离子加速器冷却储存环实验环（HIRFL-CSRe）以及未来大型加速器--强流重离子加速器装置（HIAF）上有望通过DR精密谱学方法研究高电荷态重离子甚至放射性离子的同位素移动,进而获得相关原子核的核电荷半径等信息。The cooler storage ring is equipped with an electron-cooler. It is an excellent experimental platform for dielectronic recombination (DR) experiment of highly-charged ions. In this paper, the dielectronic recombination experiments of lithium-like Ar15+ ions with mass number 36 and 40 are conducted at the HIRFL-CSRm(main ring of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou). The experimental electron-ion collision energy scale is from 0 eV to 35 eV. Extrapolation method is exploited to obtain the excitation energies of transitions 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 of the 36,40Ar15+ ions from experimental data. Meanwhile, GRASP2K program is utilized to calculate the mass shift factors and field shift factors of 36,40Ar15+ ions for 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 transitions to obtain isotope shifts in DR spectra. In theoretical calculation, isotope shifts of 36,40Ar15+ ions corresponding to 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 are 0.861 meV and 0.868 meV, respectively. They are both less than the experimental precision (~10 meV) of these dielectronic recombination experiments at the CSRm, which explains that isotope shifts cannot be distinguished from the experimental dielectronic recombination spectra. However, the field shift of highly-charged ions is proportional to Z5. In the future, the dielectronic recombination experiments of highly-charged heavy ions even radioactive ions will be conducted at the HIRFL-CSRe (experimental ring of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou) and the future large accelerator facility--HIAF(High intensity Heavy-ion Accelerator Facility) to measure isotope shifts to obtain the nuclear charge radius information.     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

Coherence-Like States of Two Coulomb-Correlated Ions Confined in a Paul Trap

We report the n x n＇ coherence-like state solutions in the cases of n, n＇ = 1, 2,... for the system including two Coulomb-correlated ions confined in a one-dimensional Paul trap with a time-dependent harmonic potential. One of the n＇ exact solutions of the centre-of-mass motion describes a generalized coherent state. For a small driving strength the n approximate solutions of relative motion are constructed, which describe the coherent oscillations of the two ions around the classical equilibrium position.     

Mechanism of Striation in Dielectric Barrier Discharge

The mechanism of striations in dielectric barrier discharge in pure neon is studied by a two-dimensional particle- in-cell/Monte Carlo collision （PIC-MCC） model. It is shown that the striations appear in the plasma background, and non-uniform electrical field resulting from ionization and the negative wall charge appear on the dielectric layer above the anode. The sustainment of striations is a non-local kinetic effect of electrons in a stratified field controlled by non-elastic impact with neutral gases. The striations in the transient dielectric barrier discharge are similar to those in dc positive column discharge.     

Dependence of Crystal Quality and β Value on Synthesis Temperature in Growing Gem Diamond Crystals

High quality Ib gem diamond single crystals were synthesized in cubic anvil high-pressure apparatus （SPD- 6 × 1200） under 5.4GPa and 1230℃-1280℃. The （100） face of seed crystal was used as growth face, and Ni70Mn25Co5 alloy was used as solvent/catalyst. The dependence of crystal quality andβ value （the ratio of height to diameter of diamond crystal） on synthesis temperature was studied. When the synthesis temperature is between 1230℃ and 1280℃, theβ value of the synthetic high-quality gem diamond crystals is between 0.4 and 0.6. The results show that when theβ value is between 0.4 and O. 45, the synthetic diamonds are sheet-shape crystals; however, when theβ value is between 0.45 and 0.6, the synthetic diamonds are tower-shape crystals. In addition, when theβ value is less than 0.4, skeleton crystals will appear. When theβ value is more than 0.6, most of the synthetic diamond crystals are inferior crystals.     

Preparation and reaction of bis (perfluoroalkanesulfonyl) methyl halides

Halogenation of the potassium or silver salts of bis(trifluoromethanesulfonyl)methane (CF3SO2)2CH2 and its cyclo analogues 1 with N-fluoro-bis(trifluoromethanesulfonyl)imine [(CF3SO2)2-NF], chlorine or bromine gave good yields of the corresponding α-halo disulfone (CF3SO2)2CHX and cyclo analogues 9, 10. The chemical transformation of these fluorinated α-halo-disulfones are described.     

BeH，BeD，BeT分子基态(X2Σ+)的结构与势能函数

采用量子力学从头算方法，运用二次组态相互作用QCISD(T)/aug-cc-pVTZ和电子相关单双耦合簇CCSD(T)/6-311++G(3df，2pd)研究了BeH，BeD，BeT分子基态的结构与势能函数，计算出了这些分子的光谱数据(ω_e，ω_eχ_e，B_e，α_e，D_e)，结果与实验光谱数据吻合较好.这表明上述分子基态的势能函数可用经修正的Murrell-Sorbie+c₆函数来表示. 关键词： BeH BeD BeT分子基态 分子结构 势能函数     

财务与营销的平衡术

在企业里，财务部门与营销部门常常会存在分歧与矛盾，换位思考、深入沟通，可能是解决这一矛盾的根本之道。