X射线光栅微分相衬成像视场分析

X射线光栅微分相衬成像对由轻元素构成的物质的内部探测具有传统吸收成像无法比拟的优势, 尤其在癌症的早期诊断和轻元素材料及器件的无损检测等领域应用潜力巨大. 大视场成像是影响该技术从实验室走向实际应用的重要因素. 针对大视场成像的客观需求, 基于菲涅耳衍射原理和光栅结构特征, 建立了量化物理模型用于分析影响成像视场的因素, 提出了实现大成像视场的有效途径, 为未来大视场光栅微分相衬成像方法的设计和应用提供理论依据.     

双维位置灵敏CsI(Tl)探测器

描述了一种双维位置灵敏CsI(Tl)探测器.用3组分α源测量该探测器得到的位置分辨为0.81mm(FWHM),对于69MeV/u ³⁶Ar能量分辨为0.9％(FWHM).在RIBLL的ΔE-E粒子鉴别望远镜中常常作为E探测器.由于CsI(Tl)晶体对不同的粒子的能损-光输出的非线性,需要针对不同离子对CsI探测器作能量-光输出校正曲线.     

A new method of detecting interferogram in differential phase-contrast imaging system based on special structured x-ray scintillator screen

An x-ray scintillator screen with a special structure,functioning as detector and analyser grating,was proposed for collecting the interferogram of differential phase contrast imaging without absorption grating and difficulty of fabrication by a state of the art technique.On the basis of phase grating diffraction,a detecting model of the scintillator screen was built for analysing the phase and absorption information of objects.According to the analysis,a new method of phase retrievals based on two-images and the optimal structure of screen were presented.     

Internal cancellation of spikes using two avalanche photodiodes in series for single photon detection

<正>We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength.In this method,the raw single photon avalanche signals are not attenuated,thus a high signal-to-noise ratio can be obtained compared with the existing results.The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10~(-4) at 213 K.     

光子晶体光纤拉制中工艺参数的控制

分析了光子晶体光纤拉制中各工艺参数之间的相互影响,建立了工艺参数与最终光纤结构之间的对应关系.在温度和送料速度的协调控制下,通过调节气压参数可有效控制气孔结构.实验拉制出孔径孔距比分别为0.45和0.8的单模以及高占空比光子晶体光纤.在制备非均匀孔径光子晶体光纤时,仅靠调控工艺参数往往难以拉制出理想结构,本文以一种单偏振单模PCF结构为例,对预制棒结构进行了优化设计.计算表明可由此拉制出满足要求的光子晶体光纤. 关键词： 光子晶体光纤 工艺参数 气压控制 气孔结构     

Good Congruences on Intra-abundant Semigroups

Ｔｈｒｏｕｇｈｏｕｔｔｈｉｓｐａｐｅｒ，ｗｅｆｏｌｏｗｔｈｅｃｏｎｃｅｐｔｓ，ｎｏｔａｔｉｏｎｓａｎｄｔｅｒｍｉｎｏｌｏｇｙｏｆ［１－２］．ＩｔｉｓｗｅｌｋｎｏｗｎｔｈａｔＧｒｅｅｎｒｅｌａｔｉｏｎｓｐｌａｙａｓｉｍｉｌａｒｒｏｌｅｉｎａｂｕｎｄａ...     

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.     

动能橡胶圆球弹优化选择及外弹道仿真

为了为某型动能防暴发射器选择最优橡胶弹丸,建立了橡胶圆球弹外弹道模型,从国内外典型橡胶圆球弹的大小、空气阻力对弹道的影响和终点效应三方面分析了对橡胶圆球弹选择的影响,利用MATLAB仿真软件计算了8mm、10mm、15mm三种直径不同质量条件下的空气阻力对弹道的影响、最大射程、终点速度、飞行时间、动能和比动能,重点分析比动能和Ｋ值对弹道特性及终点效应的影响,通过分析和比较,得出了直径为10mm,质量为2g的橡胶圆球弹最适合作为某型动能防暴发射器的战斗弹丸;通过分析直径10mm,质量2g的橡胶圆球弹不同发射角度情况下的弹道特性和终点效应,结果表明,该橡胶圆球弹存速能力强,发射距离远,安全性高,为某型动能防暴发射器的弹丸制造提供了理论支撑。     

真空介电常量和真空磁导率在高斯单位制中的数值

首先由ε 0和μ0在国际单位制中的数值得出其在高斯单位中的数值, 然后利用之, 把电磁学公式由S I制 化到G a u s s制, 并利用它解释了存在真空极化的合理性, 及“ 真空磁化”的存在     

Pb-Mg-Al合金腐蚀机理的电子理论研究

为了了解Pb-Mg-Al合金腐蚀的物理本质, 本文采用基于第一性原理的赝势平面波方法系统地计算了Pb-Mg-Al合金中各物相的结合能、费米能级和局域态密度等电子结构参数, 分析了合金的电化学腐蚀机理. 计算结果表明：Pb-Mg-Al合金中各主要组成物相稳定性大小关系为 Mg₁₇Al₁₂>Mg₂Pb>Mg;Mg,Mg₂Pb和Mg₁₇Al₁₂的费米能级存在E_f(Mg)>E_f(Mg₂Pb)>E_f(Mg₁₇Al₁₂)的关系, 说明Mg最容易失去电子, Mg₂Pb次之, Mg₁₇Al₁₂最难;局域态密度表明, 在同样的外界条件下, 体系中Mg相和Mg₂Pb相对于Mg₁₇Al₁₂均处于不稳定的状态, 容易失去电子, 即容易发生腐蚀. Pb-Mg-Al合金体系中不同物相的费米能级差构成了电化学腐蚀的电动势, 导致电子从费米能级高的Mg相和Mg₂Pb相流向费米能级低的Mg₁₇Al₁₂相, 使Pb-Mg-Al合金发生腐蚀.