Bi2Te3-xSex(x≤3)同晶化合物电子结构的第一性原理研究

本文采用基于密度泛函理论的第一性原理全势能线性缀加平面波方法(FLAPW),分析了Bi₂Te_3-xSe_x体系中各原子自旋轨道耦合(SOI)的p_1/2修正对体系性质的影响,并对Bi₂Te_3-xSe_x(x≤3)同晶化合物的电子特性进行系统的理论研究,首次计算出Bi₂S 关键词： 2Te_3-xSe_x(x≤3)同晶化合物')" href="#">Bi₂Te_3-xSe_x(x≤3)同晶化合物 第一性原理 电子结构 自旋轨道耦合     

Cross section of the impact single ionization of B2＋ by H＋

The ionization process of B2+ by H+ impact is studied using the continuum-distorted-wave eikonal-initial-state (CDW-EIS) method and the modified free electron peak approximation (M-FEPA), respectively. Total, single-, and double- differential cross sections from 1s and 2s orbitals are presented for the energy range from 10 keV/u to 10 MeV/u. Comparison between the results from the two methods demonstrates that the total and single-differential cross sections for the high-energy incident projectile case can be well evaluated using the simple M-FEPA model. Moreover, the M-FEPA model reproduces the essential features of the binary-encounter (BE) bump in the double-differential cross sections. Thus, the BE ionization mechanism is discussed in detail by adopting the M-FEPA model. In particular, the double- and single-differential cross sections from the 2s orbital show a high-energy hip, which is different from those from the 1s orbital. Based on Ref. [1], the Compton profiles of B2+ for 1s and 2s orbitals are given, and the hips in DDCS and SDCS from the 2s orbital are explained.     

沟槽型硅微结构中子探测器的蒙特卡罗模拟研究

采用蒙特卡罗模拟方法研究了微结构参数、填充致密度等因素对沟槽型微结构半导体中子探测器(MSND)性能的影响规律,并开展了沟槽型MSND的优化设计研究。研究表明,随着沟槽间距的增加,MSND的探测效率呈下降趋势;当沟槽间距固定时,存在最优的沟槽宽度使得探测效率最大化;沟槽深度越大,探测效率越高。沟槽宽度和沟槽间距为15μm和5μm是一对优化的参数组合,可保证较高的探测效率和较平稳的系统甄别阈-探测效率曲线。当系统甄别阈取300keV时,沟槽宽度、间距和深度分别为15,5μm和200μm时的MSND热中子本征探测效率可达37.77%,与平面探测器相比提高了9.2倍;对137 Cs源662keV伽马射线的中子-伽马射线甄别比可达4.1×103,与平面探测器相比提高了23.7倍。本工作从理论上证明了MSND可解决传统平面型半导体中子探测器探测效率低的难题,同时可保持半导体探测器中子-伽马射线甄别容易的特点。     

基于叶绿素荧光光谱分析的稻瘟病害预测模型

为了实现稻瘟病的快速、准确和无损检测,力求构建稻瘟病害预测模型。根据水稻叶片相对病害面积将稻瘟病划分为3个等级,通过激光诱导法采集不同病害等级的活体水稻叶片叶绿素荧光光谱。选取502～830 nm波段激光诱导叶绿素荧光光谱(LICF)作为研究对象,利用Savitzky-Golay平滑法(SG)和一阶导数变换(FDT)对光谱信息进行预处理,通过主成分分析(PCA)方法获取经SG-FDT预处理后光谱的特征向量,根据累积贡献率和方差选取前3个主成分进行分析。将试验样本分为建模样本和检验样本,以稻瘟病害等级为预测指标,利用建模样本的133片叶片的光谱和病害信息分别结合判别分析(DA)、多类逻辑回归分析(MLRA)和多层感知器(MLP)建立稻瘟病的预测模型,利用检验样本的89片叶片的光谱和病害信息对所建模型进行预测检验,完成对PCA-DA、PCA-MLRA和PCA-MLP的对比寻优。结果表明,PCA-DA,PCA-MLRA和PCA-MLP模型均能完成对稻瘟病害的预测,但PCA-MLP模型的平均预测准确率能够达到91.7%,相比PCA-DA和PCA-MLRA模型,在稻瘟病害3个等级上均具有较好的分类和预测能力。     

耦合系统的朗之万动力学产生法

提出一种朗之万动力学方法获取处于热平衡态耦合系统内部振子坐标,数值模拟了单端固定简谐振子链的时间演化行为,并将其平衡性质与解析解进行了比较.结果表明了朗之万动力学方法的有效性.推广应用于非简谐四次方型耦合系统,模拟得到振子的四次方均坐标,与理论值验证;以模拟结果作为样本点计算哈密顿量,其能量分布与Boltzmann分布相符.     

非对称损失函数下Burr Ⅻ型分布可靠性指标的Bayes估计

本文研究了R=P(Y＜X)在两种非对称损失函数下的Bayes估计问题,其中随机变量X和Y相互独立且服从不同的Burr XII型分布.利用Lindley近似方法,获得了Bayes估计的显式近似表达式,通过随机模拟比较了不同损失函数下的Bayes估计的性质.     

Coupling characteristics of laterally coupled gratings with slots

Laterally-coupled ridge-waveguide distributed feedback lasers fabricated without epitaxial regrowth steps have the advantages of process simplification and low cost. We present a laterally coupled grating with slots. The slots etched between the ridge and grating area are designed to suppress the lateral diffusion of carriers and to reduce the influence of the aspect-ratio-dependent-etching effect on the grating morphology in the etching process. Moreover, the grating height in this structure can be decreased to lower the aspect ratio significantly, which is advantageous over the conventional laterally coupled ridge waveguide gratings. The effects of five main structural parameters on the coupling characteristics of gratings are studied by MODE Solutions. It is found that varying the lateral width of the grating can be used as an effective way to tune the coupling strength; narrow slots (100 nm and 300 nm) and wide ridge (2 μm-4 μm) promote the stability of grating coupling coefficient and device performance. It is important to note that the grating bottom should be fabricated precisely. The comparative study of carrier distribution and mode field distribution shows that the introduction of narrow slots can strengthen the competitive advantage and stability of the fundamental mode.     

参数方程在数学竞赛中的应用

<正>题目已知A、B是椭圆x²/a2/a²+y2+y²/b2/b²=1(a>b>0)的左、右顶点,P、Q是该椭圆上不同于顶点的两点,且直线AP与QB,PB与AQ分别交于M、N.(1)证明:MN⊥AB;(2)若弦PQ过椭圆的右焦点F_2,求直线MN的方程.分析与猜想对于椭圆的大题计算量本来就很大,初看此题似乎什么条件都没有,笔者也试着从一般方法做过,但计算量实在很大.而后仔细分析,此时想着从椭圆的参数方     

Optical total reflection and transmission with mode control in a dielectric subwavelength nanorod chain

We report a polarization dependent reflection phenomenon beyond the normal incidence with a subwavelength nanorod chain.Light waves of the transverse electric mode will be totally reflected while those of the transverse magnetic mode will transmit through.The total reflection or transmission phenomenon can be seen as a constructive or destructive interference of the incident field with the transverse mode field of the chain.With the low-loss feature and the ultra-compact characteristic,this structure may find applications in photonic circuits.     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。