CdSiP2单晶生长及防爆工艺研究

对磷硅镉(CdSiP2)单晶生长过程中发生爆炸的原因进行了分析,设计出新型的逐层减压坩埚.通过在内外层坩埚之间的空腔内加入适量CdSiP2粉末产生的蒸气压,平衡和降低了晶体生长过程中坩埚内壁承受的压力,实现逐层减压,从而减小了内层坩埚形变,降低了生长容器爆炸的几率.同时,改进了布里奇曼生长法的降温工艺,生长出尺寸达φ14 mm×32mm的CdSiP2单晶体.X射线分析表明单晶衍射面为(204)晶面,回摆峰半峰宽值为0.434,衍射谱峰强度高,具有良好的对称性;晶体在1500～7500 cm-1波数范围的红外透过率达55;,吸收系数为0.10 ～0.17 cm-1,电阻率1.3×107 Ω·cm.     

一种新的求解带约束的有限极大极小问题的精确罚函数

提出了一种新的精确光滑罚函数求解带约束的极大极小问题．仅仅添加一个额外的变量,利用这个精确光滑罚函数,将带约束的极大极小问题转化为无约束优化问题． 证明了在合理的假设条件下,当罚参数充分大,罚问题的极小值点就是原问题的极小值点．进一步,研究了局部精确性质．数值结果表明这种罚函数算法是求解带约束有限极大极小问题的一种有效算法．     

全电离氢等离子体的电导率

主要研究了全电离等离子体的散射相移、传输截面和电导率.相移应用WKB方法计算,且计算结果与使用精确计算方法得到的结果非常一致,证明了所用计算方法的正确性和准确性.在对传输截面的计算中,观察到了形状共振,这种共振是由于半束缚态的消失产生的.电导率的计算应用了Chapman-Enskog方法,并与其它理论和实验结果进行了比较.     

Equilibrium dynamics of the sub-Ohmic spin-boson model under bias

Using the bosonic numerical renormalization group method, we studied the equilibrium dynamical correlation function C(ω) of the spin operator σ_z for the biased sub-Ohmic spin-boson model. The small-ω behavior C(ω) ∝ω~s is found to be universal and independent of the bias ε and the coupling strength α(except at the quantum critical point α = αc and ε = 0). Our NRG data also show C(ω) ∝χ~2ω~s for a wide range of parameters, including the biased strong coupling regime(ε = 0 and α α_c), supporting the general validity of the Shiba relation. Close to the quantum critical point αc,the dependence of C(ω) on α and ε is understood in terms of the competition between ε and the crossover energy scale ω_0~*of the unbiased case. C(ω) is stable with respect to ε for ε《ε~*. For ε》ε~*, it is suppressed by ε in the low frequency regime. We establish that ε~*∝(ω_0~*)~(1/θ)holds for all sub-Ohmic regime 0≤s 1, with θ = 2/(3s) for 0 s≤1/2 and θ = 2/(1 + s) for 1/2 s 1. The variation of C(ω) with α and ε is summarized into a crossover phase diagram on the α–ε plane.     

啁啾相移光纤光栅分布式应变与应变点精确定位传感研究

利用啁啾相移光纤光栅狭缝的中心波长对应变点和应变量的波长敏感性,实现应变与应变点精确定位的传感.当啁啾光纤光栅上的某一位置产生微应变时,该应变点会产生相移,其频谱则会出现一个与之对应的狭缝,且狭缝的深度和中心波长与应变的大小和位置相关.当串接不同中心波长的啁啾光纤光栅后,即可实现一定范围内的分布式应变与应变点精确定位检测.本文通过V-I传输矩阵法建立了狭缝深度和中心波长关于应变量和应变位置的理论模型,分析结果表明理论上可以实现微米量级的精确定位.搭建了级联啁啾相移光纤光栅的分布式应变传感装置,实验获得的最大应变灵敏度为0.19 pm/με.该精确定位传感装置在先进制造、精密加工、航空航天、铁路系统等高新技术领域具有重要的应用前景.     

镁基复合材料的放氢性能

将混合粉末Ni和Ti覆盖于纯Mg锭表面制备Mg基复合材料.此方法有利于吸/放氢相Mg2Ni和催化相NiTi规则地生成与分布.纯Mg锭位于中心位置,而粉末Ni和Ti包覆于纯Mg锭表面.首先确定生成Mg2Ni和NiTi的温度范围为600℃左右;根据此温度范围,计算在650℃和850℃ Mg2Ni和NiTi的晶粒尺寸,从而确定最优化的烧结温度;建立晶体结构模型,确定Mg2Ni合金相主要分布在烧结体表面;最终实现了5 min放氢量为4wt;,实现了短时间内大放氢量的目的.     

基于生活实践的工程流体力学启发性教学初探

工程流体力学教学中需要强调理论与实践的有机结合.本文提出基于生活实践案例以问题链形式进行启发性工程流体力学教学.以总流能量方程及水头损失计算教学为例,设计了"自来水水龙头堵住一部分出口后水流喷射的距离和流量如何变化"这一简单生活实践问题,将重要知识点贯穿其中.教学应用效果表明,启发性、开放性的生活实践问题,能够很好地引导学生综合运用理论知识,解决实际问题,同时能够培养学生的生活观察和独立思考能力.     

Developing Josephson junction array chips for microvolt applications

Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microwave. By selecting different parts of the array, it can output a voltage from 1 μV to 256 μV. The flat region of the voltage steps is over 200 μA.This kind of array is useful for potential microvolt applications.     

弹性支撑斑海豹胡须模型单自由度流致振动实验研究

斑海豹依靠其具有波状外形的胡须,可感知猎物尾迹流场中的涡流,进而循迹追踪.对斑海豹胡须感知涡流特征的机制进行研究具有重要的科学意义和应用价值.本文根据斑海豹胡须的外形参数,制作了1:30的实验模型,在水槽中研究了均匀流场和尾迹流场中单个胡须模型和胡须模型阵列的单自由度流致振动特性,分析了模型振动响应与涡流特征的关联.结...     

Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal–insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from(1ˉ11) to(011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal–insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal–insulator transition.