顺式与反式偶氮苯衍生物分子非线性光学性质理论研究

利用密度泛函理论(DFT)B3LYP/6-31G(d,p)方法优化了一系列顺式与反式偶氮苯衍生物分子,在此基础上结合有限场(FF)方法和密度泛函理论对分子非线性光学(NLO)性质及电子光谱进行了计算分析,结果表明:顺式与反式结构的变化对其偶极矩、分子内电荷分布与转移以及前线轨道跃迁都造成影响,从而影响分子的第一超极化率.同时相对于顺式偶氮苯衍生物分子,反式分子具有较大的二阶非线性光学系数.     

光学多目标识别的新方案

介绍一种数学形态学的击中与否（Ｈｉｔ－ｏｒ－Ｍｉｓｓ）算法，能快速准确实现光学多目标识别的新方案，避免了普通光学相关目标识别方法中经常出现的错误信号，因此，其目标识别结果更为有效可靠。     

An extension of the modified Sawada—Kotera equation and conservation laws

Based on the modified Sawada-Kotera equation, we introduce a 3 × 3 matrix spectral problem with two potentials and derive a hierarchy of new nonlinear evolution equations. The second member in the hierarchy is a generalization of the modified Sawada-Kotera equation, by which a Lax pair of the modified Sawada-Kotera equation is obtained. With the help of the Miura transformation, explicit solutions of the Sawada-Kotera equation, the Kaup-Kupershmidt equation, and the modified Sawada-Kotera equation are given. Moreover, infinite sequences of conserved quantities of the first two nonlinear evolution equations in the hierarchy and the modified Sawada-Kotera equation are constructed with the aid of their Lax pairs.     

贫铀表面脉冲电镀镍的组织结构与抗腐蚀性能

在氨基磺酸盐镀液中采用脉冲电镀技术以不同的电镀参数进行镍镀层制备，采用X射线衍射仪、扫描电镜、透射电镜、金相显微镜对镀层的组织结构进行分析，用电化学综合测试系统及重量法在50μg/gCl^-的氯化钾溶液对镀层的孔隙率和电化学腐蚀性能以及腐蚀动力学曲线进行测试。     

Elimination of Crystallographic Wing Tilt of Canti-Bridged Epitaxial Laterally Overgrown GaN Films by Optimizing Growth Procedure

Canti-bridged epitaxial lateral overgrowth （CBELO） of GaN is performed by metalorganic chemical vapour deposition （MOCVD） on maskless V-grooved sapphire substrates prepared by wet chemical etching with different mesa widths. The wing tilt usually observed in ELO is not found in the CBELO GaN with wide mesa widths, while it can be detected obviously in the GaN with narrow mesa widths. The wing tilt of CBELO GaN grown on a grooved sapphire substrate with narrow mesa can be controlled by adjusting the thickness of the nucleation layer. The dependence of the wing tilt on the nucleation layer thickness is studied. Cross-sectional scanning electron microscopy is used to characterize the geometry of the wing regions, and double crystal x-ray diffraction is used to analyse the structural characteristics and to measure the magnitude of the crystalline wing tilt. It is found that the crystalline wing tilt can be eliminated completely by first growth of a thin nucleation GaN layer then the CBELO GaN. Possible reason and the origin of the wing tilt in CBELO GaN films are also discussed.     

亚临界流体萃取马鲛鱼加工下脚料中鱼油的研究

以二甲醚为萃取溶剂,萃取压力始终控制在0.8~1.0 MPa,优选亚临界流体萃取马鲛鱼加工下脚料中鱼油工艺条件.以马鲛鱼油萃取得率为考查指标,对影响鱼油提取工艺的因素进行了研究.通过单因素试验探讨了萃取时间、萃取温度、萃取次数对萃取效果的影响,利用 L4(23)正交试验法优化亚临界流体萃取马鲛鱼加工下脚料中鱼油的最佳工艺条件.试验结果表明:亚临界流体萃取马鲛鱼油的最佳条件为萃取时间45 min,萃取温度40℃,萃取3次,在此条件下马鲛鱼油萃取得率为73.52%,所得马鲛鱼油各项指标均达到一级油标准.揭示亚临界流体萃取技术应用于鱼油生产,具有成本低,经济效益好的良好前景.     

First-principles investigations of proton generation in α-quartz

Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in α-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen(H_2) is present, the proton generation can be enhanced by cracking the H_2 molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doublyhydrogenated defects. In particular, a fully passivated E_2' center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices.     

碱液修饰对硅纳米线阵列电池光谱响应的影响

采用金属催化化学腐蚀法在p型(100)硅基底上制备了硅纳米阵列,然后用碱溶液对纳米线阵列进行修饰。分别研究了碱液修饰对硅纳米线阵列形貌、光电性质的影响。研究表明: 与绒面及纳米线阵列相比,碱修饰30 s硅纳米线阵列的表面分散均匀,反射率降低;光谱响应度显著提高,并且出现最大量子效率对应波长红移现象。最后,详细讨论了碱液修饰硅纳米线阵列电池对光谱响应的影响机制。     

The electron transport characters in a nanostructure with the periodic magnetic-electric barriers

This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostrueture with the periodic magnetic-electric barriers These observable quantities are found to be strongly dependent not only on the magnetic configuration, the incident electron energy and the incident wave vector, but also on the number of the periodic magnetic-electric barriers The transmission coefficient and the spin polarization show a periodic pattern with the increase of the separation between two adjacent magnetic fields, and the resonance splitting increases as the number of periods increases. Surprisingly, it is found that a polarization can be achieved by spin-dependent resonant tunnelling in this structure, although the average magnetic field of the structure is zero.     

碱溶液修饰硅纳米线阵列绒面

提出用碱溶液修饰硅纳米线阵列制作太阳能绒面的方法。实验中首先采用金属催化化学腐蚀法在Si(100)基底上制备了定向排列的硅纳米线阵列,然后将纳米线阵列浸入碱溶液中进行修饰,修饰时间分别为10,30,50,60,90s。通过扫描电子显微镜(SEM)对硅纳米线阵列进行形貌分析,采用太阳能测试系统附带的积分球测量纳米线阵列绒面结构的反射光谱。通过测量和分析发现硅纳线阵列在碱溶液中修饰30s时表面分布均匀,在400～1000nm波段的综合反射率低于4%。结果表明碱溶液修饰纳米线阵列的方法能够有效分散束状硅纳米线阵列,明显降低绒面的反射率,并且初步分析了碱溶液修饰硅纳米线阵列的分散机理。