排序方式: 共有16条查询结果,搜索用时 15 毫秒
11.
采用磁控溅射技术制备了铒掺杂的氢化非晶硅(a-Si∶H(Er))样品.进一步通过200—500℃温度递增的后退火处理,获得了不同的Si悬挂键(Si-DBs)密度,并在此基础上研究了Si-DBs密度改变对其Er光荧光(Er-PL)的影响.退火温度低于350℃时,Er-PL强度持续增加,但Si-DBs密度的变化显得较复杂;350℃以上时,Er-PL强度随Si-DBs密度的增加而减小.在200—250℃的退火温度范围内,Si-DBs是由于结构弛豫而减少;在250—500℃的退火温度范围内,可能由于Si—H键的断
关键词:
氢化非晶硅
铒掺杂
Si悬挂键
光荧光 相似文献
12.
A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth 下载免费PDF全文
A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits. 相似文献
13.
采用超低压(22×102Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了InGaAsP/InGaAsP 级联电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distributed feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明,采用该技术制备的器件
关键词:
超低压
选择区域生长
集成光电子器件
超短光脉冲 相似文献
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采用超低压(22×102Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了应变型InGaAsP/InGaAsP电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distribute feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明,采用该技术制备的集成器件表现出了良好的性能:激射阈值为19 mA,出光功率接近7 mW,边模抑制比(side-mode suppression ratio, SMSR)大于40 dB,将该集成器件出射光耦合进普通单模光纤后进行测量,获得了16 dB的消光比,器件3 dB响应带宽达到了10 GHz以上.将该集成器件完全封装后成功进行了10 Gb/s非归零码(non-return zero, NRZ)的传输实验:在误码率为10-10的传输条件下于普通单模光纤中传输了53.3 km,色散代价小于1.5 dB,动态消光比大于8 dB,且眼图清晰张开.
关键词:
超低压
选择区域生长
集成光电子器件
10 Gb/s 相似文献
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