LD泵浦Nd∶LuVO4/Cr4+∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体，利用Cr4+∶YAG晶体作为可饱和吸收元件，实现了1.06 μm激光的被动调Q运转.在泵浦功率为19.1 W时，获得最高平均输出功率为4.58 W，脉冲宽度为84 ns，单脉冲能量为36.6 μJ以及峰值功率为436.2 W的激光脉冲.     

Irn(n=2-25)团簇基态结构的遗传算法研究

用遗传算法结合Gupta紧束缚模型势研究了Irn(n=2-25)团簇的基态结构.分析了Irn(n=2-25)团簇的基态结构随团簇尺寸的变化规律.计算结果表明,Irn(n=2-25)团簇的每个原子的平均束缚能和平均第一近邻随团簇尺寸的增加而增大,以总束缚能的二阶差分为判据,Irn(n=2-25)团簇的幻数是4、7、9、13、15、19、23.     

Picosecond Stimulated Raman Scattering of SrWO4 Crystal

Stimulated Raman scattering （SRS） of picosecond pulses is investigated in a new crystal SrWO4. The second harmonic generation of a mode-locked Nd：YAG laser system is used as the pump source. In an external singlepass configuration, the SRS thresholds for the first to the fourth Stokes lines are measured. For the first Stokes line, the steady-state gain coefficient of the SrWO4 crystal is calculated to be 15.96cm//GW. In our experiment, as many as five Stokes lines （559.23 nm, 589.61 nm, 623.49 nm, 661.50 nm, 704.44 nm） and three anti-Stokes lines （506.97nm, 484.34 nm, 463.65nm） are observed, and the total conversion efficiency is as high as 62%.     

Improved performance of Au nanocrystal nonvolatile memory by N_2-plasma treatment on HfO_2 blocking layer

The N_2-plasma treatment on a HfO_2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO_2/Si O2/p-Si are also characterized. After N_2-plasma treatment, the nitrogen atoms are incorporated into HfO_2 film and may passivate the oxygen vacancy states. The surface roughness of HfO_2 film can also be reduced. Those improvements of HfO_2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N_2-plasma is introduced into Au nanocrystal(NC) nonvolatile memory to treat the HfO_2 blocking layer. For the N_2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N_2-plasma treated device. It can be concluded that the N_2-plasma treatment method can be applied to future nonvolatile memory applications.     

套管元件变热流传热

通过试验工作,分析了单、双面加热的影响,研究了热流线性变化时的传热,提出了相应的经验公式。此外还改进了原先提出的套管变热流传热计算模型,进一步考虑了物性变化与不同几何尺寸的影响。计算与试验数据作了比较,一致程度是满意的。     

千周和兆周范围的马氏体相变内耗以及预马氏体相变内耗

在千周和兆周两个频段分别测量了含Cd为46.1at％,47.5at％,50.0at％和52.5at％的AuCd合金中与马氏体转变有关的内耗和杨氏模量。实验结果表明,在千周范围,由于马氏体转变引起的Q^-1(内耗)是静滞后型的。Q^-1峰的形成可以用弹性软化及界面位错的静滞后阻尼机制来解释。而兆周范围的超声衰减是与频率有关的,表明尚有共振型及弛豫型阻尼的成份。此外,实验还观察到AuCd合金的等温马氏体转变Q^-1峰以及预马氏体相变Q^-1峰。 关键词：     

STUDY OF HIGH-LYING EXCITED STATES OF RARE-EARTH ELEMENT Dy BY LASER RESONANCE IONIZATION SPECTROSCOPY

This paper describes the investigation of high-excited states of Dy. which includes the measurement of high Rydberg states and autoionizing states, by means of laser resonance ionization spectroscopy (LRIS). Two high Rydberg series (n>40), 4f¹⁰(⁵I₈) 6sns and 4f¹⁰(⁵I₈) 6snd, have been obtained by exciting the state of 4f¹⁰(⁵I₈) 6s6p (³P⁰₂) ⁵I⁰₈ using two-step laser excitation-electric field ionization method. With the data obtained, we determined the first ionization potential of Dy. It is 47901.7±0.6 cm^-1, that is. about one order more accurate than the results given in the literature. Using the same technique, we found 97 autoionizing states by exciting the state of 4f⁹5d6s(⁷H⁰₇).     

LD抽运的Nd:YAG陶瓷/KTP绿光激光器

报道了一种LD端面抽运Nd:YAG陶瓷、KTP腔内倍频的全固态连续波绿光激光器.当抽运功率为21.6 W时,1064 nm基频输出达到11.3 W,光—光转换效率为52.3%.采用Ⅱ类切割的KTP晶体作为腔内倍频介质,在直腔结构下获得了最大功率为1.86 W的532　nm绿光输出,光—光转换效率为7%.输出光斑具有高斯型强度分布,1 W输出时的M²因子约为1.7. 关键词： 全固态绿光激光器 Nd:YAG陶瓷 KTP倍频 直腔     

一类抽象动力系统的C0群性质及其在迁移理论中的应用

本文研究一类抽象动力系统的性质.使用Hilbert空间的分解方法,获得了主算子的谱和相应的群的表示;使用有界线性算子的扰动理论,获得了抽象动力算子的谱分解.作为应用,研究了迁移理论中的一类积-微分方程.