Composition-Dependent Characterization of Sb2Te3 Thin Films Prepared by Ion Beam Sputtering Deposition

The optimization of ion beam sputtering deposition process for Sb2 Te3 thin films deposited on BK7 glass substrates is reported. The influence of composition ratio on the thermoelectric properties is investigated. X-ray diffraction shows that the major diffraction peaks of the films match with those of Sb2 Te3. Hall effect and Seebeck coefficient measurement reveal that all the samples are of p-type. The Sb2 Te3 thin films exhibit the Seebeck coefficient of 190μVk^-1 and the electrical conductivity of 1.1 × 10^3 Scm^-1 when the atomic ratio of Sb to Te is 0.65. Carrier concentration and motility of the films increase with the increasing atomic ratio of Sb to Te. The Sb2 Tea film with a maximum power factor of 2.26×10^-3 Win^-1K^-2 is achieved when annealed at 400℃. Raman measurement shows that the main peaks are at about 120 cm^-1, 252 cm^-1 and 450 cm^-1, in agreement with those of V-VI compound semiconductors.     

随机双指数记忆耗散系统的非马尔可夫扩散

针对具有双指数耗散记忆核函数的两自由度耦合系统, 本文利用Laplace变换导出了热宽带噪声激励下该系统响应二阶矩的解析表达式. 并观察到位移二阶矩不同于单自由度情形下的反常扩散:<x²(t)> ∝ t^α (0<α<2, α≠1), 而是随时间及噪声等参数变化呈现普遍的振荡扩散现象.分析可得, 阻尼耦合因子B使粒子远离简谐势场的束缚, <x²(t)>随B的增大扩散加剧而摩擦系数增大却使其趋于平稳状态.进一步, 若两热噪声互关联时, 较小的互关联时间对二阶矩的影响较大, 反之作用较小. 伴随互关联强度递增, 位移二阶矩的扩散加剧, 位移间的相关性加强, 与物理直观相符. 关键词： 热噪声 非马尔可夫扩散 广义朗之万方程 关联性     

Crystal Structures and DNA Binding Properties of 2-Naphthoxyacetic Acid Cu(Ⅱ) Complexes

Two new copper complexes based on 2-naphthoxyacetic acid ligand, namely [Cu(L)_2(CH_3CN)]_2(1) and [Cu(L)(1,10-phen)_2](2), where L = 2-naphthoxyacetic acid and 1,10-phen = 1,10-phenanthroline, were obtained by hydrothermal reaction and characterized by single-crystal X-ray diffraction. The binuclear complex 1 and mononuclear complex 2 belong to space group C2/c and P■, respectively. The binding properties of the two compounds with ct-DNA were investigated by UV-Vis and fluorescence spectra. The two compounds could bind with ct-DNA through interactions. Compound 2 displays stronger binding ability in the reaction with ct-DNA.     

近期热点文章

正关键词:壳层隔绝纳米粒子增强拉曼光谱·ORR反应机理·纳米催化剂Y. H. Wang, J. B. Le, W. Q. Li, J. Wei, P. M. Radjenovic, H. Zhang, X. S. Zhou, J. Cheng, Z. Q. Tian,J. F. Li. In-situ Spectroscopic Insight into the Origin of Enhanced Performance of Bimetallic Nanocatalysts towards ORR, Angew. Chem. Int. Ed., 2019, 58,16062-16066.在分子水平实时揭示纳米电催化反应机理对科学设计高效催化剂具有重大意义,但也极富挑战.厦     

A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region （centred at about 12 μm）. After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm （centred at 10 μm） within wide incidence angles （about 50°）, is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.     

自旋为1的三粒子Heisenberg XXX链中杂质对热纠缠的影响

采用纠缠的度量方法Negativity研究了匀强磁场下自旋为l的含杂质三粒子HeisellhergXXX链的热纠缠特性.通过计算系统的杂质位与其余部分间的两体纠缠N1-23及正常位与其余部分间的两体纠缠N12-3,发现纠缠存在的临界温度T.的改变来自杂质参数J1的变化,随杂质参数J1,的增加而增加,外界磁场B的存在会降低纠缠值,但并不会改变临界温度.可以通过调节杂质参数J1和外界磁场B来控制两体纠缠N1-23,和N12-3的大小.     

谈物理学的进展高新技术与物理教学

物理学的发展对人类文化产生了深刻的影响．在物理教学中,应该介绍一些物理学的新成就、新课题、高新技术,跟踪物理科学的最新进展．把讲授基础知识与介绍物理科学的新进展结合起来,让学生了解物理科学的发展带来的新技术在各个领域中的广泛应用,使物理     

时空光场调控以及时空光涡旋波包的研究进展(特邀)

综述了时空耦合光场,包括时空光场的理论背景,产生时空光场的实验方法,以及时空光涡旋波包的研究现状.由于时空光场的生成涉及色散与衍射效应之间微妙的相互作用,尽管用于产生时空耦合光场的实验装置与现有的4f脉冲整形器实验装置几乎相同的,但与传统的脉冲整形或光束整形技术相比,时空光场的生成过程更为丰富.新型时空光场具有独特的光...