Correlation Analysis of the Runoff of the Rivers and the Seisms in China

In recent hundred years the annual discharge variations of the Changjiang River (represented by the Yichang station) and the Huanghe River (represented by Shanxian and Tangnaihe, respectively) have closely related to the geographical distribution of the earthquakes coming about in China in the same year, Both the occurrence of the destructive seism or seismic swarm in the river basins and the disappearance of the shocks in the east and south of the basins are the conditions that the Changjiang and Huanghe Rivers are the high flow while that the strong earthquake of magnitude 7 or more occurred in North China is the condition for the Changjiang low flow year and that of 6 or more in the Qilian Mountains area is for the Huanghe River. In the latter part of this paper, a 2-year sample is given to explain that the conditions of the 2 rivers being high flow years are that the north-south seismic belt is active and in the meanwhile no seism occurred in South China, and those of the low flow year are that the     

EXAFS研究Ni-B和Ni-Ce-B超细非晶态合金的退火晶化

采用同步辐射EXAFS技术定量地研究化学还原法制备的Ni-B和Ni-Ce-B超细非晶态合金中Ni原子的局域环境结构随退火温度升高而产生的变化,结果表明,对于Ni-B和Ni-Ce-B超细非晶态合金初始样品：Ni-Ni最邻近配位壳层的平均键长RNi-Ni、配位数N、热无序σT、结构无序σs分别为0．275nm,11.9.0.0069nm,0.034nm;0.276nm,12.4,0.0067nm,0.035nm,Ni-B最邻近配位壳层的RNi-B,N, σT,σs分别为0．215nm,2.7,0.0055nm,0.0048nm;0.214nm,2.0,0.0058nm,0.0042nm,Ni-Ni配位的σs很大,是其σT的4－5倍,比Ni－B配位的σs大近一个数量级,在300℃退火后,Ni－B样品开始发生晶化生成晶态Ni3B,其RNi-Ni和σs分别为0．254nm和0．011nm,σs降低近2倍;而．3％原子比的Ce掺入后使Ni-Ce-B超细非晶态合金的晶化温度升高100℃左右。在500℃退火后,Ni－B样品的结构参数与Ni箔的相近,但Ni-Ce-B样品中的Ni-Ni配位的σs仍为0．0073nm,Ni-B配位的N为1．2,表明稀土元素Ce（以CeO2)显著增强了Ni与B的相互作用,且同时使退火晶化成的Ni晶结构产生畸变。     

《化学进展》近期要目预告

低温甲醇液相合成催化剂及工艺的研究(储伟　吴玉塘　罗仕忠　包信和　林励吾) 　　沸石类分子筛合成研究新进展(袁忠勇　周午纵　李赫FDA6) 　　新一代高活性烯烃均相聚合催化剂——多氮螯合配位后区过渡金属络合物　　(王梅　钱明星　虞晓敏　何仁) 　　超临界流体技术研究进展(肖建平　范崇政) 　　水分子簇的研究进展(王林双　王榕树) 　　钴基催化剂在Fischer\|Tropsch合成烃中的研究进展(银董红　钟炳　彭少逸) 　　光声位相理论及其在化学中的应用研究进展(伍荣护　苏庆德) 　　茂金属/硼化合物烯烃聚合催化体系研究进展(张普玉　王立　封麟先) 　　内分泌干扰剂的研究进展(任晋　蒋可) 　　21世纪的分析化学——回顾与前瞻(黄本立) 　　结构敏感材料的基础研究(郭国聪　姚元根　吴克琛　吴棱　黄锦顺)     

安全简单消解钠的方法

针对实验室废钠处置的难题,提出了一种安全又简单的消解钠的方法。在反应器中加入煤油和水,构成油、水两相,再将钠块投入到反应器中。钠受到重力、煤油浮力和反应产物（氢气）推力的作用,在油相和油水界面往复运动,并逐渐地和水反应。这种废钠消解方法安全又实用。     

Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials

Low-density materials, commercially available hydrogensilsesquioxane （HSQ） offer a low dielectric constant. HSQ films can be obtained by spin on deposition （SOD）. In this work, low-dielectric-constant HSQ films are prepared by using D5 （decamethylcyclopentasiloxane） as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field.     

二次风率对分级进风燃烧室内湍流燃烧与NOx生成的影响

本文在分级进风燃烧室的热态实验装置上,测量了燃烧室内湍流燃烧的温度场和组分浓度场,研究了分级进风的流量比率即二次风率对燃烧及NOx生成的影响.得到了四组不同二次风率下燃烧室内气体温度和O2、CO2、CO与NO浓度的分布.     

部分耗尽SOI MOSFET总剂量效应与偏置状态的关系

实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.     

杂交及切断过程的QCM实时检测研究(英文)

采用自组装技术,将 5′端标记有巯基的 20-merODN(oligo 1)以金 硫键形式牢固结合在 7. 995MHz的AT-切石英晶体的镀金表面,然后由石英晶体微天平实时检测了与碱基序列互补的 10 merODN (oligo 2)和 8 merODN(oligo 3)的杂交,同时还研究了稀土金属铈离子在温和条件下对DNA的水解切断作用.结果表明:应用QCM方法可能实时检测DNA的固定和杂交,Ce(IV)能随机切断单链DNA;但不能切断杂交形成的双链DNA,因此可利用杂交保护的方法对单链DNA实行定位切断.     

管式炉中半导体激光器巴条Au80Sn20焊料封装研究

为了提高半导体激光器的封装质量和效率,引入管式炉利用夹具进行批量封装。由于封装质量的好坏直接影响半导体激光器的输出特性和使用寿命,利用MOCVD生长808 nm芯片,重点分析了管式炉温度和封装时间对半导体激光器巴条双面金锡封装质量的影响。利用X射线检测、结电压、光电特性参数和smile效应测试手段,确定了管式炉封装半导体激光器巴条的最优封装条件,为以后的产业化提供了指导意义。     

一个基于运输规模经济的库存选址模型

介绍了一种新的配送中心(DC)选址模型,在该模型中考虑了一般库存和安全库存成本,同时把从供应商到DC的运输成本也结合进去综合考虑,运输成本是由固定成本加可变成本两部分组成,反映了运输规模经济.