Electrical Properties of La-Doped Al2O3 Films on Si （100） Substrates as a High-Dielectric-Constant Gate Material

Amorphous La-doped Al2O3 （La： Al2O3） thin films are deposited on n-type （100） Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy： Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La：Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.     

HL-2A tokamak disruption forecasting based on an artificial neural network

Artificial neural networks are trained to forecast the plasma disruption in HL-2A tokamak. Optimized network architecture is obtained. Saliency analysis is made to assess the relative importance of different diagnostic signals as network input. The trained networks can successfully detect the disruptive pulses of HL-2A tokamak. The results obtained show the possibility of developing a neural network predictor that intervenes well in advance for avoiding plasma disruption or mitigating its effects.     

利用高压热处理技术提高Bi-2223/Ag高温超导带材临界电流

提高临界电流密度(Jc)对促进Bi-2223/Ag高温超导带材的应用有着重要意义.在常压热处理条件下所制备的带材中存在大量的裂纹、孔洞和第二相颗粒等,这些因素都会对带材的超导连接性能产生破坏作用.我们成功建立了一套可用氧气氛的热等静压设备,工作气压和温度可同时达到15MPa和850°C.通过引入裂纹愈合热处理过程,我们成功对带材进行了高压热处理,所得样品中第二相颗粒和裂纹数量大幅度降低,77K、自场下的临界电流相比常压热处理样品提高了20%左右.     

微波辅助合成发光可调ZnS∶Cu纳米晶

以巯基丙酸(MPA)为稳定剂, 利用微波辐射加热方法制备了水溶性的Cu掺杂的ZnS纳米晶. 通过改变微波条件, 可以在460～572 nm之间实现对ZnS∶Cu纳米晶发射峰位的连续调控. 通过XRD、 UV-Vis、荧光及荧光衰减对ZnS∶Cu纳米晶的结构和发光性质进行了详细探索, 并利用时间分辨荧光光谱对其发光机理进行了初步研究.     

具有三维网络的新型配位聚合物[Nd(C7H6NO2)32·H2O]n 的合成、结构和性质

以Nd(NO3)3@6H2O和NH2C6H4COOH为原料,经[Nd(C7N6O2)3@H2O]的自组装,得到了具有三维网络结构的配位聚合物[Nd(C7H6NO2)3@H2O]n.该聚合物晶体属单斜晶系,空间群P2(1)/n,a=0.98069(5)nm,b=2.2736(2)nm,c=0.98254(8)nm,β=100.053(5)°,V=2.1571(3)nm3,Z=4.最后的一致性因子R=0.038.磁性研究表明,该化合物在低温下表现出反铁磁性质.测定了化合物的UV-vis-NIR和IR光谱,并进行了分析和指认.     

Investigation of Impurity Ion Transport with Laser Blow-off in HL-2A Tokamak

Non-recycling impurities are injected into ohmic HL-2A plasma for the first time. The impurities of titanium and aluminium are injected in the discharges with varying plasma density and current. The convection and diffusion process of the injected impurity ions during the inward phase are qualitatively investigated. The results show that the transport of impurities is much slower in the central region of the plasma than outside of it and that it is greatly enhanced during sawtooth crashes.     

企业转型导向的政策资源评价研究——基于中小企业板块的实证分析

政策资源的运用是企业转型过程中不可或缺的方面,评价政策资源对企业转型的影响至关重要.鉴于此,以我国中小企业板块61家已转型上市企业为研究对象,收集其转型前后各3年数据,考察政策资源对企业转型的影响.通过构建多元线性回归分析模型和实证研究发现,政府补助和税收优惠对企业转型起积极作用,而信贷优惠对企业转型的作用并不明显.最后从政府的视角就制定、监管、创新政策,以及从企业视角就使用政策和利用政策资源不足等方面提出建议.     

Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 x Cd x Te (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra.The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature,commonly assumed to be more favourable for As activation,has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x ≈ 0.39),(ii) the density of V Hg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of V Hg will lead to a short-wavelength shift of epilayers,and (iii) the V Hg prefers forming the V Hg-As Hg complex when the inactivated-As (As Hg or related) coexists in a certain density,which makes it difficult to annihilate V Hg in As-doped epilayers.As a result,the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.     

非对称弹性需求网络容量限制交通分配有效算法

在非对称交通网络中,针对路段容量限制下弹性需求用户均衡分配模型计算困难,提出了一种路段容量限制弹性需求用户均衡交通分配问题的有效算法.该算法在迭代时,排队延误因子、误差因子与交通需求通过自适应调节来逼近真实路段车辆行驶时间和出行者交通需求,促使各路段交通流量逐步满足限制条件,最终达到弹性需求广义用户均衡.方法克服了容量限制弹性需求用户均衡分配计算量大及随机分配法要求枚举所有路径的困难.随后证明了算法的收敛性,并对一个小型路网进行了数值试验.     

吲哚-3-醛-邻硝基苯基半卡巴腙的阴离子识别

利用吲哚~-3~-醛和邻硝基苯基半卡巴肼设计合成了新型含内氢键的阴离子识别受体吲哚~-3~-醛~-邻硝基苯基半卡巴腙.利用核磁共振波谱、质谱和元素分析等手段对该受体进行了表征,利用荧光光谱滴定和核磁共振波谱滴定研究了该受体对Ac O~-,F~-,H_2PO~-_4,Cl~-,Br~-,I~-,HSO~-_4等阴离子的识别性能.结果表明,该受体与Ac O~-,F~-,H_2PO~-_4,Cl~-,Br~-,I~-,HSO~-_4的结合常数和结合比分别是6.98,1∶2;6.85,1∶2;5.40,1∶2;13.51,1∶2;6.34,1∶1;5.40,1∶1;2.88,1∶1.该受体由于具有内氢键,与具有适当体积、碱度的Cl~-很匹配,对Cl~-具有很强的结合能力和很高的选择性.