Electrical Properties of La-Doped Al2O3 Films on Si （100） Substrates as a High-Dielectric-Constant Gate Material

Amorphous La-doped Al2O3 （La： Al2O3） thin films are deposited on n-type （100） Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy： Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La：Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.     

十年級數学小組的工作經驗

每年我都根据学生們的意願領導着數学小组的活動。这些活動的目的是为了滿足最有才能的学生們的詢問,促進他們數学的發展。每一个月我领導兩次活動;从九月開始工作,到四月結束,学生們都很樂意來参加小組活動,在某些題材上学生們按照我所指定的文献準备,做報告,較複雜的內容由我做報告。在有些報告中邀請所有高年級的学生來参加,並且有時候活動用數学晚会的形式來進行,这些數学小組的擴大活動常常用來研究著名的數学家的生平和事業。在工作開始時我与参加小組的同学們討論工作計劃,所以某些活動的主題年年在改变。我將举出小組工作的詳細計劃,按照我在最近所獲得的成果我修改了某些活動(關於不等式这一部分)。     

Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 x Cd x Te (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra.The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature,commonly assumed to be more favourable for As activation,has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x ≈ 0.39),(ii) the density of V Hg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of V Hg will lead to a short-wavelength shift of epilayers,and (iii) the V Hg prefers forming the V Hg-As Hg complex when the inactivated-As (As Hg or related) coexists in a certain density,which makes it difficult to annihilate V Hg in As-doped epilayers.As a result,the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.     

非对称弹性需求网络容量限制交通分配有效算法

在非对称交通网络中,针对路段容量限制下弹性需求用户均衡分配模型计算困难,提出了一种路段容量限制弹性需求用户均衡交通分配问题的有效算法.该算法在迭代时,排队延误因子、误差因子与交通需求通过自适应调节来逼近真实路段车辆行驶时间和出行者交通需求,促使各路段交通流量逐步满足限制条件,最终达到弹性需求广义用户均衡.方法克服了容量限制弹性需求用户均衡分配计算量大及随机分配法要求枚举所有路径的困难.随后证明了算法的收敛性,并对一个小型路网进行了数值试验.     

吲哚-3-醛-邻硝基苯基半卡巴腙的阴离子识别

利用吲哚~-3~-醛和邻硝基苯基半卡巴肼设计合成了新型含内氢键的阴离子识别受体吲哚~-3~-醛~-邻硝基苯基半卡巴腙.利用核磁共振波谱、质谱和元素分析等手段对该受体进行了表征,利用荧光光谱滴定和核磁共振波谱滴定研究了该受体对Ac O~-,F~-,H_2PO~-_4,Cl~-,Br~-,I~-,HSO~-_4等阴离子的识别性能.结果表明,该受体与Ac O~-,F~-,H_2PO~-_4,Cl~-,Br~-,I~-,HSO~-_4的结合常数和结合比分别是6.98,1∶2;6.85,1∶2;5.40,1∶2;13.51,1∶2;6.34,1∶1;5.40,1∶1;2.88,1∶1.该受体由于具有内氢键,与具有适当体积、碱度的Cl~-很匹配,对Cl~-具有很强的结合能力和很高的选择性.     

内嵌微流道低温共烧陶瓷基板传热性能（英）

随着系统级封装（SIP）所容纳的电子元器件和集成密度迅速增加,传统的散热方法（热通孔、风冷散热等）越来越难以满足系统级封装的热管理需求。低温共烧陶瓷（LTCC）作为常见的封装基板材料之一,设计并研制了三种内嵌于LTCC基板的微流道,其中包括直排型、蛇型和螺旋型微流道（高度为0.3 mm,宽度分别为0.4, 0.5和0.8 mm）。通过数值仿真和红外热像仪测试相结合的方式分析了微流道网络结构、流体质量流量、雷诺数、材料热导率对内嵌微流道LTCC基板换热性能的影响,实验结果表明:当去离子水的流量为10 mL/min,热源等效功率为2 W/cm2时,直排型微流道的LTCC基板最高温度在3.1 kPa输入泵压差下能降低75.4 ℃,蛇型微流道的LTCC基板最高温度在85.8 kPa输入泵压差下能降低80.2 ℃,螺旋型微流道的LTCC基板最高温度在103.1 kPa输入泵压差下能降低86.7 ℃。在三种微流道中,直排型微流道具有最小的雷诺数,在相同的输入泵压差下有最好的散热性能。窄的直排型微流道（0.4 mm）在相同的流道排布密度和流体流量时比宽的微流道（0.8 mm）能多降低基板温度10 ℃。此外,提高封装材料的热导率有助于提高微流道的换热性能。     

Al2O3/SnO2 Co-Nanoparticle Modified Grafted Collagen for Improving Thermal Stability and Infrared Emissivity

Al2O3/SnO2 co-nanoparticles were prepared with a modified sol-gel technique followed by a thermal treatment process. With these co-nanoparticles the grafted collagen-Al2O3/SnO2 nanocomposites were obtained using a supersonic dispersion method. X-ray diffraction, FT-IR analysis, transmission electron microscopy, TGA/DTA and infrared emissivity test were performed to characterize the resulting nanoparticles and nanocomposites, respectively. The Al2O3/SnO2 co-nanoparticles showed a narrow distribution of size between 20-40 nm and could be uniformly absorbed on the tri-helix scaffolds of the grafted collagen without any aggregation. The nanocomposites possessed better thermal stability and substantially lower infrared emissivity than the grafted collagen and Al2O3/SnO2 co-nanoparticles with an increase of degradation temperature from 39 to 210 ℃ and a decrease of infrared emissivity from 0.850 of the grafted collagen and 0.708 of the Al2O3/SnO2 co-nanoparticles to 0.424, which provided a potential application of the nanocomposites to areas such as photoelectronics.     

用丝电流方法快速识别HL-2A等离子体边界

利用等离子体外部测量的磁场信号,使用丝电流方法对HL-2A等离子体边界进行了快速识别。介绍了该方法的原理、相关的测量系统配置和该程序的研制进展。对识别结果进行了讨论。     

化学探头法与荧光光谱法测定水中溶解氧量

探讨了化学探头法和荧光光谱法测定水中溶解氧的关系。分别用F检验和t检验对两组数据进行了比较,结果表明两组数据的精密度和系统误差都没有显著差异,两种方法测定溶解氧的相对标准偏差(RSD,n=9)分别为0.35%,0.33%。进而又探讨了溶解氧与NaCl含量、温度之间的关系,结果表明溶解氧含量随NaCl含量的增加、温度的升高而逐渐降低。     

基于大科学装置的空间金属组学和单细胞/单颗粒金属组学

金属组学是综合研究生命体内（(特别是细胞内）)自由或络合的全部金属原子的分布、含量、化学种态及其功能的一门学科,而大科学装置为金属组学研究提供了强有力的工具。本综述本文首先介绍了金属组学发展简史,然后介绍了基于大科学装置的同步辐射技术、中子技术、质子技术及缪子技术等,最后概述了基于大科学装置的空间金属组学、单细胞/单颗粒金属组学的应用示例。基于大科学装置的中子活化技术（NAA）NAA、X-射线荧光光谱（XRF）以及质子激发X射线谱（PIXE ）等技术是开展非原位空间金属组学研究的有力手段,而XRF、PIXE以及缪子X射线荧光谱（MXA）为开展原位空间金属组学提供了有力工具,特别是基于XRF的技术,其空间分辨率可低至10 nm级别,是开展原位单细胞/单颗粒金属组学的利器。 新一代同步辐射光源、质子源及缪子源将为空间金属组学、特别是时空金属组学研究提供更强有力工具。