平面阻塞效应测量E_p=1565keV时~(27)Al(p,α)~(24)Mg共振反应寿命

采用(111)面阻塞效应测量了E_p=1565keV共振时~(27)Al(p,α)~(24)Mg核反应寿命。用解析方法分析实验数据。测到的核寿命τ=17.9_(-4.0)~(+4.4)as,与<110>轴阻塞效应测量结果和文献给出的结果在误差范围内一致。测量了E_p=1183.4keV时(111)面的α粒子的阻塞分布,并与理论计算作了比较。     

三维欧氏空间中的Vasic不等式

本文将欧氏平面上著名的Vasic,不等式推广到三维欧氏空间中,从而获得关于四面体二面角的Vasic不等式。此外,本文还获得最近[2]中结果的一个推广。设α、β、γ是三角形的三个内角,x,y,z是任意三个正数,Vasic于1964年获得如下一个     

线偏振光波在闪锌矿半导体中的非线性传输特性

闪锌矿半导体的三阶光学非线性具有本征各向异性和二色性,线偏振光波在传输过程中偏振态和偏振方向都将发生变化.本文建立了线偏振光波在闪锌矿半导体中的非线性传输方程,并用传输方程分析了光波偏振态的变化规律.     

四面体有内切球吗？

求函数周期尤其是求两个函数和（差）的周期（本文所提的周期均指最小正周期），是高中数学的难点，有些书刊资料介绍了一种最小公倍数法，即先求出两个函数各自的周期，然后求它们的最小公倍数即为两个函数和（或差）的周期．对此学习者有很多疑惑，如结论是否恒成立？两个函数可否不是三角函数？可否推广到多个函数和（差）？本文作如下探究．     

边界条件对输液圆柱壳的动态特性与稳定性的影响

1、引言输液管系统的动态特性与稳定性问题是液-固体耦联振动方面的一个重要课题。自从Ashley和Havihand研究Traus—Arabian输油管线以来,力学界在这三十多年中对本课题做了大量的工作。以前的工作主要限于三种边界条件的讨论,即一般意义的简支端、固定端和悬臂端,偏重于研究径向位移w与转角(?)w/(?)x的限制对系统特性的影响。本文将进而讨论轴向、环向约束的影响,全面地、定量地分析系统在各种两端支承的边界条件下的动态特性与稳定性。     

"氯化钠的提纯"实验中反应产物组成的研究

“氯化钠的提纯”实验中反应产物组成的研究董大海，唐翊国（华东石油大学炼制系９０─２班东营２５７０００）一、前言我校使用的无机化学实验教材［１］“氯化钠的提纯”中提到，当向加热至近沸的粗食盐溶液中滴加稍过量的１ｍｏｌ·Ｌ－１ＢａＣｌ２溶液，并滤去不溶性...     

EFFECT OF RESILIENT CONNECTION ON SOUND TRANSMISSION LOSS OF METAL STUD DOUBLE PANEL PARTITIONS

Existing techniques for predicting sound TL of double panel partitions are usually based onthe assumption that the mechanical connection of the stud is a rigid sound bridge,but they pro-vide unrealistic estimates of the TL in the case of metal stud partitions,of which the TL is sig-nificantly improved at mid and higher frequency regions owing to the lateral resilient effect of thestud itself.A modified expression for prediciting the TL of metal Stud partitions is thus given inthis paper,which is in good agreement with experimental results.In addition,the effects of addi-tional resilient pad strips on both sides of the stud are discussed.It is shown that even for sucha complex structure the TL can also be determined approximately by means of a set of simpleexpressions.     

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500^o C. The increment of electron concentration from room temperature to 500^o C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements （XRD）. The buildup levels in persistent photoconductivity （PPC） are also shown to be directly proportionM to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.