排序方式: 共有113条查询结果,搜索用时 31 毫秒
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应用缓冲层对自组装结构的作用能Er和自组装结构表面能Es的协同作用分析了InP自组装结构在GaxIn1-xP缓冲层表面的形貌变化,计算发现缓冲层组分影响自组装结构的形貌,随着缓冲层与InP自组装结构之间应力的增加,InP岛倾向于拉长,理论计算还发现随着自组装结构体积的增大,自组装结构也随之拉长,而且缓冲层的参数决定了自组装结构最小能量状态时的体积大小,应用金属有机物化学气相沉积技术在GaAs衬底上生长了不同的InP/GaInP体系,并对实验得到的自组装体系形貌进行了分析,实验结果证实了以上的理论分析。 相似文献
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我们首次在透明衬底CaF2上生长了ZnSe-ZnTe应变超晶格。通过X射线衍射测量,观测到多级卫星峰,表明超晶格周期结构的形成.光致发光光谱峰值的蓝移,表征ZnSe-ZnTe超晶格中应变与量子尺寸效应的存在.吸收光谱中几个明显的拐点,表明了发生在超晶格导带与价带子能级之间的多级跃迁的形成。 相似文献
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采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×1018cm-3增大到6.5×1018cm-3,p型AlGaInP层的空穴浓度由6.0×1017cm-3增大到1.1×1018cm-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×1017cm-3和1.7×1017cm-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460~700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍. 相似文献
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为得到量子级联激光器特有的光噪声特性,通过在速率方程中引入Langevin噪声源以及自发辐射因子的方法,在单模与线性增益的情况下讨论了自发辐射因子及与偏置电流等参数与光噪声的强度及带宽等特性之间的关系,计算结果表明,增大自发辐射因子能降低光噪声的强度,增宽光噪声的3-dB截止频率,进一步的研究也表明,自发辐射因子对光噪声的影响与激光器的偏置电流有密切关系,这种影响在偏置电流较小时比较明显,但当偏置电流很大时自发辐射因子对光噪声的影响将变得很弱。 相似文献
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Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers 下载免费PDF全文
The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InAlN electron blocking layer (EBL) are studied. The emission spectra,carrier concentration in the quantum wells (QWs),energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InAlN EBL performs better over a conventional LED with an AlGaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used. 相似文献
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以聚碳酸酯(PC)粉体、有机硅光扩散剂和YAG∶Ce荧光粉为原料,通过熔融共混法和高温压模法及减薄抛光工艺制备出不同有机硅光扩散剂质量分数的PC/YAG∶Ce光散射荧光树脂样品,通过SEM、XRD、透射光谱和PL的性能分析,表明:荧光树脂样品在500~800 nm光谱范围有较高的透光率,样品的主相都为Y3Al5O12,在342和448 nm有两个激发波峰,发射光谱在532 nm有一宽峰,属于Ce3+的5d→4f特征跃迁发射,对应的荧光寿命在61.5 ns左右。把荧光树脂样品应用到白光LED器件的封装获得的光效为81.12 lm/W@100 mA, 说明PC/YAG∶Ce荧光树脂片适用于作白光LED封装的新型荧光材料。 相似文献
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Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer 下载免费PDF全文
The optical and physical properties of InGaN light-emitting diode (LED) with a specific design of staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement of optical performance compared with the design of conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of LED could be one of the main reasons for these improvements. 相似文献