Mg2+和Na+对高熔点煤灰熔融性的影响

以山西阳泉固庄高熔点煤灰为研究对象,通过向煤灰中添加不同量的MgO与Na₂CO₃,研究了Mg²⁺与Na⁺在高温下对煤灰熔融性的影响。研究结果表明,煤灰熔融温度随氧化镁的添加(5%~25%)单调下降;而随氧化钠添加(5%~25%)出现先降后升现象,在氧化钠添加量为15% 时,灰熔点达到最低。XRD分析表明,阳泉固庄煤灰熔融温度高(大于1 750℃)的原因是高温条件下耐熔矿物莫来石、方英石的存在。添加外加剂后,高温时外加剂与硅酸盐矿物反应,生成了更多的低共熔矿物霞石、堇青石等。同时,Mg²⁺和Na⁺的加入会使得非桥氧数量增多,高温煤灰低聚物增多,降低了煤灰的熔融温度。通过三元相图以及SEM分析,高温条件下煤灰中部分元素的富集以及团聚现象是导致Mg²⁺和Na⁺对煤灰熔融温度影响不同的原因。     

同一法证明圆锥曲线光学性质及应用举例

1 圆锥曲线的光学性质 1.1 椭圆的光学性质:从椭圆一个焦点发出的光,经过椭圆反射后,反射光线都汇聚到椭圆的另一个焦点上(如图1.1)     

利用LC-MS-MS等方法分析确定黄连总碱提取物中微量未知物的结构

中药黄连中所含的多种生物碱中主要成分是小檗碱、棕榈碱、药根碱和黄连碱等,为了分析鉴定黄连总碱中微量生物碱,运用ESI-MS-MS,FaB-MS-MS以及LC-MS-MS等多种质谱方法对由甲醇提取的总碱部分提取物进行了分析研究,并结合LC-NMR对其中1种未知物的结构给予了确认.     

New bifurcations of basin boundaries involving Wada and a smooth Wada basin boundary

This paper demonstrates and analyses double heteroclinic tangency in a three-well potential model, which can produce three new types of bifurcations of basin boundaries including from smooth to Wada basin boundaries, from fractal to Wada basin boundaries in which no changes of accessible periodic orbits happen, and from Wada to Wada basin boundaries. In a model of mechanical oscillator, it shows that a Wada basin boundary can be smooth.     

(一)-△~(9(12))-CapneUene类的合成中间体——光学活性5-甲基-8-羟基双环[3,3,0]2一辛酮的不对称合成研究

通过手性硝基烯胺(4)与α-甲基-δ-戊内酯烯醇锌盐发生加成消除反应解决了倍半萜Capnellene类合成中构筑不对称季碳这个难题,对映体过量(e. e. )为94％。由L-脯氨酸经14步实现了(一)-△~(9(12))-Capnellene类的合成中间体——光学活性5-甲基-8-羟基双环[3 3,0]-2-辛酮(13)的对映选择合成。     

多量子阱光学波导中的模式截止

导出了两种材料构成的多量子阱光波导的模式截止方程，并讨论了Ｓｉ衬底上生长的应变ＧｅｘＳｉ１－ｘ／Ｓｉ多量子阱光波导的模式截止特性。     

双离子(40Ar+, C2H+6)辐照合成金刚石纳米晶颗粒

用双离子(⁴⁰Ar⁺，C₂H⁺₆)辐照实验完成了从多壁碳纳米管向金刚石纳米晶颗粒的转变.对转变机理进行了初步探讨.这一探索有望能成为一种金刚石纳米晶合成的新途径.由此可知，多重荷能离子辐照用于其他材料纳米结构的制备也不是凭空设想. 关键词： 金刚石纳米晶 离子辐照 透射电子显微镜     

钕铁硼在高温超导磁悬浮技术实验中的应用

将新材料钕铁硼作为磁导轨引入到高温超导磁悬浮技术实验中,介绍了高温超导悬浮技术实验的基本原理、仪器及钕铁硼对实验的改进.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Photoluminescence Property of Co3O4 Nanowires

Co3O4 nanowire arrays are fabricated by electrodeposition with following heat-treatment in atmosphere ambient. Photoluminescence is investigated at 295K. In the experiment, when increasing the excitation light wavelength from 260 nm to 360 nm, two kinds of emissions corresponding to the increasing excitation light wavelength are observed. One of them alters the excited emission position, another keeps its emission position. The distinct behaviour of excited emissions related to the increasing excitation wavelength indicates that the mechanism of them must be different. According to the experimental comparison and first-principle calculation, the two kinds of emissions are discussed.