杜芬方程的1/3纯亚谐解及过渡过程的分形特征研究

通过谐波平衡法和数值积分法研究了杜芬方程的1／3纯亚谐解．提出假设解，找出了亚谐频域，并对参数变化的过渡过程的敏感性和初始值扰动的过渡过程进行了研究．考察了亚谐响应幅值系数对阻尼的敏感性及亚谐振动谐波成分的渐近稳态性．此外，运用广义分形理论对杜芬方程纯亚谐解过渡过程进行了分析．分析表明，广义维数的敏感维数能清楚地描述杜芬方程纯亚谐解过渡过程特征；并对改变初始扰动、阻尼系数、激励幅值情况下，其两个不同频域的杜芬方程纯亚谐解过渡过程的不同分形特性显现出敏感性．     

Effects of a carbon convection field on large diamond growth under high-pressure high-temperature conditions

Large diamond crystals were successfully synthesized by a FeNi-C system using the temperature gradient method under high-pressure high-temperature conditions. The assembly of the growth cell was improved and the growth process of diamond was investigated. Effects of the symmetry of the carbon convection field around the growing diamond crystal were investigated systematically by adjusting the position of the seed crystal in the melted catalyst/solvent. The results indicate that the morphologies and metal inclusion distributions of the synthetic diamond crystals vary obviously in both symmetric and non-symmetric carbon convection fields with temperature. Moreover, the finite element method was applied to analyze the carbon convection mode of the melted catalyst/solvent around the diamond crystal. This work is helpful for understanding the growth mechanism of diamond.     

高压熔渗生长法制备金刚石聚晶中碳的转化机制研究

在6 GPa和1500 ℃的压力和温度范围内, 利用高压熔渗生长法制备了纯金刚石聚晶, 深入研究了高温高压下金刚石聚晶生长过程中碳的转化机制. 利用光学显微镜、X-射线衍射、场发射扫描电子显微镜检测, 发现在熔渗过程中金刚石层出现了石墨化现象, 在烧结过程中金刚石颗粒表面形貌发生了变化. 根据实验现象分析, 在制备过程中存在三种碳的转化机制: 1)金属熔渗阶段金刚石颗粒表面石墨化产生石墨; 2)产生的石墨在烧结阶段很快转变为填充空隙的金刚石碳; 3)金刚石直接溶解在金属溶液中, 以金刚石形式在颗粒间析出, 填充空隙. 本文研究碳的转化机制为在高温高压金属溶剂法合成金刚石的条件下(6 GPa和1500 ℃的压力和温度范围内)工业批量化制备无添加剂、无空隙的纯金刚石聚晶提供了重要的理论指导.     

9.7GHz高频窄带高温超导滤波器设计

本文设计了一种高频窄带高温超导微带滤波器,使用Sapphire基片上的双面YBCO高温超导薄膜,中心频率约为9.7GHz,相对带宽约为1.2%.电磁分析软件Sonnet的设计结果表明,滤波器带外抑制超过90dB,带内波纹小于0.12dB,基片尺寸为32.74mm×8.72mm.     

环形燃烧室火焰简及旋流器流场计算

本文采用偏微分方程法生成贴体网格,在任意曲线坐标系下数值研究两种先进燃烧室火焰筒及其旋流器三维紊流流场。由于旋流器的形状复杂,本文采用型线定点法确定网格的边界。在非交错网格系下采用SIMPLE算法和混合差分格式对离散方程进行求解。计算结果表明计算方法合理,这计算程序进一步扩展,可用来预估环形燃烧室反应流流场。     

Spectral Anomalies in the Fraunhofer Diffraction Pattern

We study the spectral characteristics theoretically and experimentally in the Fraunhofer diffraction pattern formed by the diffraction of a spatially coherent, polychromatic light through a slit. It is found that the spectrum in some diffraction directions close to the singular direction is redshifted, compared to the spectrum of the incident polychromatic light, and blueshifted in other directions, and splits into two lines at the singular direction. We show that the experimental results are consistent with the theoretical expectations.     

基于Bragg光纤光栅传感器的监测系统设计

设计了基于Bragg光纤光栅传感技术的监测系统,当光纤光栅所处环境的温度、应力、应变或其他物理量发生变化时,光栅的周期或纤芯折射率将发生变化,从而使反射光的波长发生变化,通过测量反射光中心波长的变化,就可以获得待测物理量的变化情况.该系统利用薄膜滤波器完成对外界的分布式测量,采用光强度检测,能够实现无缝监测.     

固定设计下一类半参数回归模型的渐近性质

对固定设计下的一类半参数回归模型yi=xiβ+g(xi)+ei,i=1,2,…,n,综合最小二乘和非参数权函数估计方法,定义了,βg的估计量β∧n,gn∧及误差方差σ2的估计量σ2n∧.在适当条件下,证明它们具有强相合性和p(2)阶平均相合性.模拟的结果表明所得结果具有优良的性质.     

从关系矩阵和关系图中看关系的传递性

定义了关系矩阵和关系图以后,从关系矩阵和关系图中很容易判别其对应的关系是否为自反、反自反、对称、反对称的。但对传递关系,在关系矩阵和关系图中就不易判别。本文对此作一阐述,并给出在计算机上实现的简单算法,使得从关系矩阵和关系图中较明确地识别五种关系具有完整性。     

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy(XPS) spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×10~5 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.