纤维板增强钢筋砼缺口梁承载力试验研究

通过对8组24根碳纤维薄板增强钢筋混凝土梁进行三点弯曲试验，探讨碳纤维薄板增强钢筋混凝土缺口梁的破坏过程、极限承载力及其影响因子．研究结果表明：1)碳纤维薄板增强钢筋混凝土缺口梁总是沿着纤维薄板与混凝土的界面发生剥高破坏；2)与无增强梁相比，增强梁的极限来载力可以提高20％一40％．而且当纤维薄板贴长Lc与两支点间距离S之比为0．57左右时增强效果最明显；3)缺口对梁的破坏模式影响较大，而对梁的极限承载力影响不大(下降10％-15％)．     

GaN基三维结构生长与器件应用

目前,c面氮化镓(GaN)基发光二极管的制备技术已经十分成熟并取得了商业化成功,但仍面临极化电场导致的大电流密度下效率下降(Droop效应)和黄绿光波段效率低的问题。为消除极化电场的影响,人们开始关注半极性和非极性面GaN。其中,基于传统极性面衬底通过三维结构生长来获得半极性和非极性GaN的方法,由于其低成本和生长的灵活性,受到了广泛研究。本文首先总结了三种GaN三维结构的制备方法并分析其生长机理。接着,在此基础上介绍了不同晶面InGaN量子阱的外延生长和发光特性。最后,列举了GaN基三维结构在半极性面LED、颜色可调LED和无荧光粉白光发光二极管方面的应用。     

基于X射线衍射的GaN薄膜厚度的精确测量

结合Williamson-Hall plot方法和线型分析方法的优点,提出了一种有效分离有限晶粒尺寸和非均匀应力等X射线衍射展宽效应的方法,可以用于GaN外延层厚度等参数的快速精确测量.用该方法对一系列在蓝宝石衬底上生长的厚度在0.7—4.2μm的GaN外延膜进行了测量,并与椭圆偏振光谱法测量结果进行了比较,结果表明其差别<4%,反应了这种方法的准确性. 关键词： GaN薄膜 厚度测量 X射线衍射     

一种新的测定一维同核全相关的NMR技术

提出一种新的基于MDY混合脉冲的可测定一维同核全相关的核磁共振技术.称为一维自旋回波MDY相干转移(lD-SEMDY)实验.结果表明.它具有下列突出优点:一是不用Z-滤波技术就可以得到纯吸收型的一维全相关谱(lD-TOCSY).与同类技术相比,操作简便.可节省测定时间.应用范围较广;二是所测定亚谱中的信号归属通过改变混合时间和延迟时间可以得到确定;三是相干转移非常有效.远程磁化转移信号的灵敏度比较高,对弱偶合的自旋体系也可进行测定.以甙类化合物为例讨论了它在谱峰高度重叠的有机结构测定中的应用.     

Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature

We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using C12/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between C12 and Ctt4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855nm/min, and the selectivity ratio overSi02 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.     

Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors

SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

多媒体时代的增强IDE接口

着重论述了增强ＩＤＥ接口对多媒体信息要求的存储容量大、传输速度快、设备数量和种类多的硬软件支持．     

基于形变势理论的掺杂计算Sb2Se3空穴迁移率

硒化锑(Sb₂Se₃)是一种元素丰富、经济且无毒的太阳电池吸收层材料.太阳电池的性能在很大程度上取决于载流子的传输特性,然而在Sb₂Se₃中,这些特性尚未得到很好的理解.通过密度泛函理论和形变势理论,本文对纯Sb₂Se₃以及掺杂了As, Bi的Sb₂Se₃的空穴传输特性进行研究,计算并分析了影响迁移率的3个关键参数:有效质量、形变势和弹性常数.结果显示,有效质量对迁移率具有最大影响,掺杂Bi的Sb₂Se₃表现出最高的平均迁移率.同时发现, Sb₂Se₃的空穴迁移率呈现出明显的各向异性,其中x方向的迁移率远高于y,z方向,这应该与x方向的原子主要以较强的共价键连接,而y, z方向以较弱的范德瓦耳斯力连接有关.载流子传输能力强的方向有助于有效传输和收集光生载流子,本研究从理论上强调了控制Sb₂Se_3...     

氮化镓基发光二极管结构中粗化 p型氮化镓层的新型生长方法

提出了一种新型p型氮化镓粗化外延生长方法,这种生长方法的本质特征是利用低温生长的p型氮化镓作为粗化层的"晶籽"层,然后在这一层的基础上高温快速生长p型氮化镓,使粗化程度得到放大. 经实际制作尺寸为12 mil×10 mil的蓝光发光二极管器件并进行验证测试,与未进行p型氮化镓粗化的结果相比,通过这种方法粗化的发光二极管光通量可提升45%;结果同时表明,该方法有效解决了低温生长p型氮化镓带来的漏电流大,及预通镁源带来的前置电压高的问题. 关键词： 粗化 氮化镓 p型氮化镓 发光二极管     

表面等离激元协助的方向性瑞利光散射研究

The origin of the Rayleigh scattering ring effect has been experimentally examined on a quantum dot/metal film system, in which CdTe quantum dots embedded in PVP are spin-coated on a thin Au film. On the basis of the angle-dependent, optical measurements under different excitation schemes (i.e., wavelength and polarization), we demonstrate that sur-face plasmon assisted directional radiation is responsible for such an effect. Moreover, an interesting phase-shift behavior is addressed.