MOVPE低温生长的n型GaN电学特性研究

系统研究了采用金属有机物化学气相外延方法在740℃和900℃条件下生长的n型GaN的电学特性. 电化学电容-电压测试表明,在低温条件下采用三乙基镓作为Ga源生长有利于降低非故意掺杂n型GaN的背景杂质浓度. 另外,对重掺Si的n型GaN的霍耳效应测试表明,随着Si掺杂浓度增大,电子浓度相应线性增大,表现出杂质带导电特性,而迁移率则相应减小. 同时,原子力显微镜测试和X射线衍射测试均表明生长温度和掺杂浓度对外延材料的表面形貌和晶体质量有影响,特别是在高掺杂浓度的情况下,样品的表面形貌恶化更严重. 在所研究的 关键词： n型GaN 电子浓度 迁移率     

多偏振组合同时测量的高灵敏飞秒时间分辨和频光谱系统

Characterization of real-time and ultrafast motions of the complex molecules at surface and interface is critical to understand how interfacial molecules function. It requires to develop surface-sensitive, fast-identification, and time-resolved techniques. In this study, we employ several key technical procedures and successfully develop a highly sensitive femtosecond time-resolved sum frequency generation vibrational spectroscopy (SFG-VS) system. This system is able to measure the spectra with two polarization combinations (ssp and ppp, or psp and ssp) simultaneously. It takes less than several seconds to collect one spectrum. To the best of our knowledge, it is the fastest speed of collecting SFG spectra reported by now. Using the time-resolved measurement, ultrafast vibrational dynamics of the N-H mode of α-helical peptide at water interface is determined. It is found that the membrane environment does not affect the N-H vibrational relaxation dynamics. It is expected that the time-resolved SFG system will play a vital role in the deep understanding of the dynamics and interaction of the complex molecules at surface and interface. Our method may also provide an important technical proposal for the people who plan to develop time-resolved SFG systems with simultaneous measurement of multiple polarization combinations.     

血样和尿样中毒鼠强气相色谱测定方法的研究及其初步应用

〕本文报道一种血、尿样品里毒鼠强的分离与分析方法。血样加入10W/VNaCl用乙酸乙酯萃取,尿样以X5树脂小柱固相萃取,气相色谱测定。所建方法已用于1例中毒病人血、尿样品的测定,在中毒4天后血中、7天后尿中仍可测出毒鼠强。另外,本方法还用于对治疗该病人的人工炭肾内毒鼠强的测定,根据测定结果对人工炭肾的疗效进行了评价。     

基于自适应步长约束的行人导航系统误差修正算法

基于惯性传感器的行人导航系统定位精度随时间累积下降,根据捷联惯导理论和人体运动学特征,提出基于自适应步长约束的行人导航误差修正算法。所提算法首先利用零速检测划分行人运动区间,其次根据加速度信息利用自适应步长估计模型计算各区间内步长,最后通过零速修正与步长约束模型修正导航误差。实验将WT901BC姿态仪固定于行人脚跟,并围绕闭环路径行走进行算法验证。实验结果表明,相比于零速修正,经过自适应步长约束算法修正后,行进240 m后起点、终点间距离误差平均值由2.50 m下降至0.18 m,导航闭环误差平均值由1.04%D下降至0.07%D,有效提高行人导航系统的定位精度。     

基于正弦函数拟合的高动态捷联惯导姿态更新算法

为提高捷联惯导在高动态条件下的姿态解算精度,基于等效旋转矢量泰勒级数展开法,提出一种基于正弦函数拟合的高动态捷联惯导姿态更新算法。以正弦函数拟合载体运动角速度,考虑Bortz方程高阶项的影响,对陀螺角增量表示的旋转矢量进行泰勒六阶展开,对比旋转矢量不同形式表达式求得误差补偿系数。在MATLAB平台上,以圆锥运动与大角速率转动并存环境作为仿真条件,对所提算法与传统算法进行对比仿真分析。仿真结果表明,在小半锥角低频圆锥运动伴随高速角速率转动情况下,所提算法性能较好,当半锥角为0.5°、角频率为2.26πrad/s、常值角速率为5.30 rad/s、姿态解算周期为0.02 s时,所提正弦函数拟合三子样旋转矢量算法与传统扩展形式频率级数/显示频率三子样圆锥算法相比误差降低了2个数量级。     

Polarization Properties of Quantum-Dot-Based Single Photon Sources

Polarization properties of single photons emitted by optical pumping from a single quantum dot （ QD） are studied by using a four-level system model. The model is capable of explaining the polarization uncertainty observed in single photon emission experiments. It is found that the dependence of photon emission efficiency and polarization visibility on pump power are opposite in general cases. By employing QDs with small size and strong carrier confinement, the photon polarization visibility under high pump power can be improved. In addition, embedding a QD into a well designed microcavity is also found to be favourable, whereas the trade-off between high polarization visibility and multi-photon emission is noted.     

气相色谱法分离检定血中八种氨基甲酸酯

采用国产Ｃ＿１８往固相提取血中八种氨基甲酸酯,用乙酸乙酯洗脱,用气相色谱分离检定,用气相色谱／质谱进行确证。此法灵敏度为１～２μｇ／ｍＬ血,最低检出限为２０～４０ｎｇ,回收率在６２～９２％之间。     

基于多头自注意力机制和Bi-GRU的人体动作识别算法

目前基于惯性传感器的人体动作识别技术具有自主、可靠等优点,但现有人体动作识别算法结构复杂、参数量大、识别精度低。针对以上问题,提出了一种基于多头自注意力机制和双向门控循环单元（Bi-GRU）的人体动作识别算法。该算法首先通过多头自注意力机制无视时间间隔地计算数据之间关联特征,再将关联特征与原始数据拼接,输入到深度Bi-GRU网络中提取顺序特征,最终通过Softmax层识别人体动作。采用YESENSE公司开发的YIS360-V姿态仪搭建了人体动作识别算法验证平台,在此基础上建立训练-测试数据集并进行了实验验证。实验结果表明,所提算法较传统Bi-GRU算法,参数量由40695个减少到18337个,识别准确率由93.36%提升至95.26%。     

AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Novel AlGaN/GaN high electron mobility transistors （HEMTs） with an insulated gate have been demonstrated by oxidizing the surface of an AlGaN layer using inductively coupled O2 plasma. X-ray photoelectron spectroscopy measurement reveals that O2 plasma treatment can produce a thin oxidized layer on the AlGaN surface. The insulated-gate devices are realized by plasma oxidization before gate metallization. The reverse gate leakage current of the fabricated HEMT has been reduced in two orders of magnitude, and the cut-off frequency increases from 5.4 GHz to 6.5 GHz.     

AIN/蓝宝石模板上生长的GaN研究

研究了在分子束外延制备的AIN/蓝宝石模板上采用金属有机物化学气相外延生长的非故意掺杂GaN的材料性质.采用X射线衍射(XRD)、透射电镜(TEM)和原子力显微镜研究了AIN模板的晶体质量和表面相貌对GaN的影响.结果表明,当AIN的表面粗糙度较小时,尽管AIN模板的位错密度较高((102)面XRD ω扫描半高全宽900-1500 arcsec),但生长得到的GaN依然具有和在蓝宝石衬底上采用"二步法"生长的GaN可比拟的晶体质量((002)面XRD ω扫描半高伞宽200-300 arcsec,(102)面400-500 arcsec)和表面粗糙度(0.1-0.2 nm).TEM照片表明GaN中位错密度降低的原因是AIN中的一部分位错在AIN和GaN的界面处被终止而未能延伸至GaN中.这可能是因为Ga原子尺寸较大,具有修复晶格缺陷的作用.而当AIN的表面粗糙度较大时,Ga原子在MOVPE生长过程中的迁移受到影响.得到的GaN晶体质量非常差.此外,采用范德堡法测量的GaN电阻率为105-106Ω·cm,比蓝宝石衬底上生长的GaN高大约6个数量级,这被认为是采用AIN代替GaN低温缓冲层所致.