茂钛化合物／改性MAO催化剂制备聚丙烯-b-间规聚苯乙烯嵌段共聚物

以五甲基环戊二烯基三苄氧基钛化合物 [Cp Ti(OBz) 3 ]为主催化剂 ,改性甲基铝氧烷作助催化剂 ,采用单体顺序投入法 ,合成了聚丙烯 b 间规聚苯乙烯嵌段共聚物 .外加三异丁基铝可以使活性中心的氧化态由Ti(Ⅳ )还原为Ti(Ⅲ ) ,从而提高苯乙烯共聚单体的转化率 .实验表明此催化体系对共聚物的合成具有较高活性 ,适宜的茂钛化合物浓度可阻止活性中心被丙烯预聚物包埋 .抽除残余丙烯气也可促进苯乙烯的共聚合 .对聚合产物进行溶剂连续萃取 ,可分离出嵌段共聚物 ,并用 13 CNMR和DSC进行结构表征     

草酸预处理对辣椒叶片抗热性的影响

研究了 40℃热胁迫下辣椒叶片中膜透性、膜脂过氧化、抗坏血酸 (ascorbate,As A)和还原态谷胱甘肽(glutathione,GSH)含量以及过氧化物酶、草酸氧化酶活性的变化 .在热胁迫处理前 3d用草酸溶液 (p H6 .5 )喷洒叶片 .结果表明 :草酸预处理能减轻热胁迫对细胞膜的伤害 (以电解质渗漏表示 ) ,在一定程度上能抑制丙二醛(malondialdehyde,MDA)和 H2 O2 的产生 ;草酸预处理能使辣椒叶片在 40℃热处理下保持较高水平的 As A、GSH含量和过氧化物酶活性 (peroxidase,POD) ;在常温下 ,草酸预处理能诱导 POD活性 ,但是对草酸氧化酶活性没有影响 .这些结果提示 ,草酸预处理能增强辣椒叶片的内在抗热性 ,但与草酸氧化酶活性无关     

载银活性炭的制备与表征

在活性炭上负载银离子,制备具有抗菌性能的吸附材料载银活性炭.首先,优选了分散剂的种类为聚乙烯吡咯烷酮(PVP),得出PVP:银离子最佳质量比为1:1;其次,探讨了在不同碳化温度下改性活性炭载银量,未经碳化处理时载银量为17.09％,碳化温度为500℃时,载银量为18.24％;碳化温度800℃时,载银量增加到18.61％...     

ZnO纳米棒在Si衬底上外延生长研究

运用热蒸发ZnO粉末法,以金做催化剂,分别在Si(100)和Si(111)两种基片上外延生长了ZnO纳米棒(样品分别标为1#和2#).通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析,结合ZnO与Si的晶格结构特征,从理论上得出了两个样品的晶格匹配关系.1#样品:[0001]ZnO∥[114]Si,[0001]ZnO∥[1-1-4]Si,[0001]ZnO∥[11-4]Si,[0001]ZnO∥[1-14]Si,失配度为1.54;;2#样品:[0001]ZnO∥[111]Si,[21-1-0]ZnO∥[11-0]Si,[1-21-0]ZnO∥[1-01]Si ,[1-1-20]ZnO∥[011-]Si,失配度为18.12;.研究表明Si衬底对ZnO纳米棒生长方向具有调控作用.     

醋酸酯淀粉/聚乙烯醇共混膜形态结构与性能

以溶液共混法制备了醋酸酯淀粉(SA)/聚乙烯醇(PVA)共混膜,通过扫描电镜(SEM)观测其表面形貌、X射线衍射仪(XRD)表征其结构、Zwick强力仪测试其力学性能.结果表明,醋酸酯化变性及SA与PVA之间的共混比对共混膜的形态结构及力学性能均有影响.随着淀粉醋酸酯化变性程度的增大,共混膜的断裂伸长率增大;当变性取代度达到0.035之后,断裂强度明显增大.增加SA的质量分数,共混膜的断裂伸长率减小,断裂强度先降低后增大;当共混比为50∶50时,断裂强度最小.     

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

In GaN-based green light-emitting diodes(LEDs) with and without Mg-preflow before the growth of p-Al GaN electron blocking layer(EBL) are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the(8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.     

Efficient and stable wireless power transfer based on the non-Hermitian physics

As one of the most attractive non-radiative power transfer mechanisms without cables,efficient magnetic resonance wireless power transfer(WPT)in the near field has been extensively developed in recent years,and promoted a variety of practical applications,such as mobile phones,medical implant devices and electric vehicles.However,the physical mechanism behind some key limitations of the resonance WPT,such as frequency splitting and size-dependent efficiency,is not very clear under the widely used circuit model.Here,we review the recently developed efficient and stable resonance WPT based on non-Hermitian physics,which starts from a completely different avenue(utilizing loss and gain)to introduce novel functionalities to the resonance WPT.From the perspective of non-Hermitian photonics,the coherent and incoherent effects compete and coexist in the WPT system,and the weak stable of energy transfer mainly comes from the broken phase associated with the phase transition of parity-time symmetry.Based on this basic physical framework,some optimization schemes are proposed,including using nonlinear effect,using bound states in the continuum,or resorting to the system with high-order parity-time symmetry.Moreover,the combination of non-Hermitian physics and topological photonics in multi-coil system also provides a versatile platform for long-range robust WPT with topological protection.Therefore,the non-Hermitian physics can not only exactly predict the main results of current WPT systems,but also provide new ways to solve the difficulties of previous designs.     

〈111〉晶向冲击加载下单晶铜中纳米孔洞增长的早期动力学行为

利用分子动力学方法模拟计算了单晶铜中纳米孔洞在沿〈111〉晶向冲击加载下增长的早期过程.测量发现不同加载强度下等效孔洞半径随时间近似成线性变化.观测到单孔洞增长的两种位错生长机理：加载强度较低时，只在沿着冲击加载方向的孔洞顶点附近区域有位错的成核和运动；而随着加载强度超过一定阈值，在沿冲击加载和其垂直方向的孔洞顶点区域都观察到位错的成核和运动.在前一种机理作用下，孔洞只沿加载方向增长；在后一种机理作用下，孔洞同时沿加载和垂直于加载方向增长.分析孔洞表面原子的位移历史，发现沿加载及与其垂直方向的孔洞顶点沿径向的速度基本恒定，由此提出了一个孔洞生长模型，可以解释孔洞增长的线性生长规律. 关键词： 纳米孔洞 分子动力学 冲击加载 位错     

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT.     

Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200 W NH₃/N₂ remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20-30%.Improved current slump,suppressed gate leakage current,and improved Schottk...