次近邻相互作用对Heisenberg XX链纠缠影响的研究

研究了存在次近邻相互作用(耦合)时Heisenberg XX链的纠缠特性. 结果表明对近邻格点, 随着耦合常数J的变化, 次近邻相互作用的存在可能使其纠缠度增大或者减小; 而对次近邻格点, 引进次近邻相互作用却可以产生纠缠, 并且使其随着|J|的增大而增大. 近邻格点间纠缠存在的临界温度T_c随着J的增大而降低, 次近邻格点间纠缠存在的临界温度T_c随着|J|的增大而升高. 此外对纠缠W态的制备, 次近邻相互作用的存在还使得三量子位情形时W态产生的时刻改变, 而对于四量子位情形却没有影响.     

真空紫外光激发下掺Pr3+铝酸盐的自陷激子对Pr3+发光的影响

研究了SrAl12 O19:Pr3+和Y3Al5O12(YAG):Pr3+在20K,77K和300K的真空紫外(VUV)光谱,二者除了表现出Pr3+特有的发射性质外,还产生了一种特殊的发射现象,即自陷激子(STE)发射,并且其随着稀土离子浓度和温度的降低而增强.还着重讨论了自陷激子对Pr3+发光的影响.     

带强迫项变系数组合KdV方程的显式精确解

通过构造两个新的Riccati方程组，推广了Riccati方法，使其具有简洁的形式，丰富和发展了已有的结果，借助Mathematica软件，求出了带强迫项变系数组合KdV方程的一些精确解，包括各种类孤波解、类周期解和变速孤波解. 关键词： Riccati方程组 变系数组合KdV方程 强迫项 类孤波解     

Hash function based on the generalized Henon map

A new Hash function based on the generalized Henon map is proposed. We have obtained a binary sequence with excellent pseudo-random characteristics through improving the sequence generated by the generalized Henon map, and use it to construct Hash function. First we divide the message into groups, and then carry out the Xor operation between the ASCII value of each group and the binary sequence, the result can be used as the initial values of the next loop. Repeat the procedure until all the groups have been processed, and the final binary sequence is the Hash value. In the scheme, the initial values of the generalized Henon map are used as the secret key and the messages are mapped to Hash values with a designated length. Simulation results show that the proposed scheme has strong diffusion and confusion capability, good collision resistance, large key space, extreme sensitivity to message and secret key, and it is easy to be realized and extended.     

Er~(3+)/Tm~(3+)共掺铋硅酸盐玻璃2.0μm光谱性质（英文）

用高温熔融法制备了Er~(3+)/Tm~(3+)共掺杂无铅铋硅酸盐玻璃.测试了玻璃的吸收光谱和荧光光谱,分析和表征了Er~(3+)、Tm~(3+)离子之间的能量传递机制和传递效率,结果表明:在800 nm和1 550 nm光源泵浦下,Er~(3+)的掺入能够增强Tm~(3+)离子1.8μm发光,相应的最大发射截面分别为6.7×10~(-21)cm~2和7.3×10~(-21)cm~2,荧光带宽达到250 nm.根据Dexter-Foster模型,得到Er~(3+):~4I_(13/2)能级到Tm~(3+):~3F_4能级的直接能量传递系数为16.8×10~(-40)cm~6/s,为1 550 nm泵浦下获得较强的1.8μm发光奠定了基础.     

电子计算机在摄谱分析中的应用——二阶法校正乳剂特性多元素测定数据处理方法研究

应用国产DJS-6型电子计算机,采用ALGOL语言,设计了盐和卤水中多种微量元素同时光谱分析的数据处理过程,包括采用变换式将测得的谱线透过率值转换,以两阶法校准感光板乳剂,扣背景和计算含量,一次算出样品中铝、铂、金、铁、铅、锡、铬、锰、镓、镍、铋、钼、鉏、钛、镉、铜、银、锌、钴等十九种微量元素的含量、并以毫克/升或百分数的形式打印,数据处理速度快,准确可靠,精度高。     

KOP晶体加工工艺

KDP(磷酸二氘钾)晶体为贵重的人工晶体,其外形如图1所示。它具有透明度好、折射率均匀、电光系数大、机械强度高、能承受强光等特点,所以KDP晶体作为电光开关、电光调Q、倍频元件等都是很理想的材料。     

Generalized Projective Synchronization between Two Complex Networks with Time-Varying Coupling Delay

Generalized projective synchronization （GPS） between two complex networks with time-varying coupling delay is investigated. Based on the Lyapunov stability theory, a nonlinear controller and adaptive updated laws are designed. Feasibility of the proposed scheme is proven in theory. Moreover, two numerical examples are presented, using the energy resource system and Lü＇s system [Physica A 382 （2007） 672] as the nodes of the networks. GPS between two energy resource complex networks with time-varying coupling delay is achieved. This study can widen the application range of the generalized synchronization methods and will be instructive for the demand supply of energy resource in some regions of China.     

Bipartite entanglement of a two-qubit system with anisotropic couplings under nonuniform magnetic fields

This paper investigates bipartite entanglement of a two-qubit system with anisotropic couplings under an inhomogeneous magnetic field. This work is mainly to investigate the characteristics of a Heisenberg XYZ chain and obtains some meaningful results. By the concept of negativity, it finds that the inhomogeneity of magnetic field may induce entanglement and the critical magnetic field is independent of J_z. The inhomogeneous magnetic field can increase the value of critical magnetic field B_c. It also finds that the magnetic field not only suppresses the entanglement but also can induce it to revival for some time.     

考虑通孔效应和边缘传热效应的纳米级互连线温度分布模型

提出了同时考虑通孔效应和边缘传热效应的互连线温度分布模型,获得了适用于单层互连线和多层互连线温度分布的解析模型,并基于65 nm互补金属氧化物半导体（CMOS）工艺参数计算了不同长度单层互连线和多层互连线的温度分布.对于单层互连线,考虑通孔效应后中低层互连线的温升非常低,而全局互连线几乎不受通孔效应的影响,温升仍然很高.对于多层互连线,最上层互连线的温升最高,温升和互连介质层厚度近似成正比,而且互连介质材料热导率越低,温升越高.所提出的互连线温度分布模型,能应用于纳米级CMOS计算机辅助设计. 关键词： 通孔效应 边缘传热效应 纳米级互连线 温度分布模型