高支化梳型聚芳醚砜/咪唑鎓盐功能化氧化石墨烯阴离子交换复合膜的制备与性能

通过Williamson反应, 在羟基化氧化石墨烯(GO-OH)表面修饰1-(6-溴己基)-3-甲基咪唑溴化物(6BrIm), 合成了1-(6-溴己基)-3-甲基咪唑溴化物功能化氧化石墨烯(6BrIm-GO). 将6BrIm-GO引入高支化梳型聚芳醚砜(ImHBPES-8)基体中, 经物理共混、 浇铸成膜及离子交换, 制备了一系列阴离子交换纳米复合膜(ImHBPES-8/x-6BrIm-GO). 6BrIm-GO的引入, 既作为一种功能纳米填料, 又提供了更多OH ^-离子传输位点, 在提高ImHBPES-8膜机械强度的同时保证了离子电导率. 研究了引入6BrIm-GO的含量对ImHBPES-8膜结构与性能的影响. 研究结果表明, 引入6BrIm-GO后, ImHBPES-8膜整体性能均得到改善. 当6BrIm-GO含量为0.75%时, ImHBPES-8/0.75%-6BrIm-GO复合膜的综合性能最佳, 其拉伸强度为18.32 MPa, 与ImHBPES-8膜相比, 提高了22.9%; 80 ℃下OH ^-离子电导率最高达79.8 mS/cm. 将ImHBPES-8/0.75%-6BrIm-GO复合膜浸泡在60 ℃的1 mol/L KOH溶液中进行碱稳定性测试, 300 h后离子电导率保留在初始的70%以上, 远高于ImHBPES-8膜(56%), 表明ImHBPES-8/0.75%-6BrIm-GO复合膜具有良好的耐碱稳定性. ImHBPES-8/0.75%-6BrIm-GO复合膜整体性能优异, 有望应用于碱性聚电解质燃料电池中.     

应对说话人位置突变的鲁棒语声去混响*

多通道线性预测算法是一种有效的语声去混响方法,但若房间内说话人位置发生变化,房间冲激响应也会随之改变,从而导致去混响效果变差。本文研究了基于递归最小二乘算法的自适应多通道线性预测语声去混响方法,提出了一种去混响过程中检测说话人位置突变的方法,它借助已有的多通道传声器信号,并未明显增加系统开销。实验表明该方法可以有效检测说话人位置的突变,并通过重置滤波器改善算法的收敛速度和稳定性。     

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.     

氮等离子体辅助脉冲激光沉积生长p型ZnO:N薄膜的光学和电学性质

通过氮气等离子体辅助脉冲激光沉积(PLD)技术制备了氮掺杂氧化锌(ZnO:N)薄膜.经过低温快速热退火(RTA)处理后,ZnO:N薄膜呈现p型导电特性.利用X射线光电子能谱(XPS)、光致发光(PL)和霍尔测量对ZnO:N薄膜中N的化学状态及其光学和电学性质进行了系列的研究.结果表明:所制得的p型ZnO:N薄膜为高度补...     

石英玻璃紫外波段折射率测量

 折射率是光学材料基本参数之一,采用直角照射法折射率测量原理,以光电瞄准法紫外光信号探测、气浮轴承构成精密测角仪角度精确测量、锁相放大器微弱信号检测、软件分析角度值与光强度变化的数据处理模型、计算机自动控制等手段,完成了一套光学材料紫外波段折射率测量仪,实现了光学石英玻璃紫外波段折射率自动测量,并实际测量得到了250 nm~450 nm波长下光学石英玻璃的折射率值。     

用密度泛函理论研究多氯代菲醌的结构和热力学性质

使用Gaussian 03程序,采用密度泛函理论(DFT)在B3LYP/6-31G*水平上对136个多氯代9,10-菲醌(PCPQ)系列化合物进行全优化和振动分析,得到各分子在298.15K、101.3kPa状态下的优势构型.结合Gaussian 03程序的输出文件,计算了PCPQ化合物在200K至1 000K的摩尔恒压热容(Cp,m).用SPSS13.0对Cp,m与温度进行多元线性回归.结果表明:氯原子取代模式对PCPQ化合物的扭角A(C4-C9-C10-C5)有很大的影响;与此同时,Cp,m与T,T-1和T-2之间有着很好的相关性(r2=1.00).     

Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon--plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×10¹⁸ cm^-3 and 8×10¹⁸ cm^-3 with a carrier mobility of 30--55 cm²/(V·s) for n-type 4H-SiC substrates and 1×10¹⁶--3×10¹⁶ cm^-3 with mobility of 290--490 cm²/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10¹⁶ cm^-3 with mobility of 380 cm²/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.     

Bichromatic coherent random lasing from dye-doped polymer stabilized blue phase liquid crystals controlled by pump light polarization

In this paper, we investigate the bichromatic coherent random lasing actions from the dye-doped polymer stabilized blue phase liquid crystals. Two groups of lasing peaks, of which the full widith at half maximum is about 0.3 nm, are clearly observed. The shorter- and longer-wavelength modes are associated with the excitation of the single laser dye (DCM) monomers and dimers respectively. The experimental results show that the competition between the two groups of the lasing peaks can be controlled by varying the polarization of the pump light. When the polarization of the pump light is rotated from 0° to 90°, the intensity of the shorter-wavelength lasing peak group reduces while the intensity of the longer-wavelength lasing peak group increases. In addition, a red shift of the longer-wavelength modes is also observed and the physical mechanisms behind the red-shift phenomenon are discussed.     

能量色散X射线荧光分析中改进型基本参数法研究

能量色散X射线荧光分析方法是目前常用的一种多元素分析方法,但该方法检出限和分析精度,受到分析基体的影响。基本参数法是目前一种常用的分析方法,但在使用过程必须获取净峰面积和基体所有成分,而在实际使用时,尤其在分析低含量样品时,净峰面积计算、基体中“暗物质”影响了测量精度,制约了基本参数法的应用。针对基本参数法的不足,将谱线解析方法与基本参数法融合,将重叠峰剥离过程嵌入基本参数法迭代过程中。在含量计算过程中,采用分析样品特征X射线分支比的理论系数,对重叠峰进行剥离,解决能量色散X射线荧光测量中净峰面积计算和定量分析问题;在计算过程中,对“暗物质”进行均一化处理。通过对标准物质测量分析,结果表明对于Ni,Cu,Zn三个元素改进型基本参数法(改进型FP)测量结果准确度高于影响系数法。     

Al窗Ag靶微型透射式X射线管模拟与性能分析

微型透射式X射线管广泛应用于能量色散X射线荧光分析领域,具有体积小、功耗低、X射线发射效率高等特点,可作为手持式X射线荧光分析仪器的激发源。目前常用铍(Be)作为出射窗材料,成本高,而且有毒性。同时为减少低能散射射线,在射线管前端放置铝(Al)作为过滤窗。本文拟采用Al为微型透射式X射线管出射窗材料,透射高能射线,屏蔽低能散射射线,降低制作成本和难度。文中采用蒙特卡洛模拟软件MCNP5模拟计算不同银(Ag)靶厚度和Al窗厚度的X射线管输出谱。结果表明,Al窗对低能射线的屏蔽作用强于对高能射线的屏蔽作用,在Al窗厚度超过1.5 mm时,低能射线完全被屏蔽,高能射线有部分透射。通过和已有研究成果[1,5]对比分析,在Ag靶厚度为2 μm,Al窗厚度为0.8 mm时,低能射线所占的比例仅为0.087 8%,高能射线产生率为0.002 73%,既能有效屏蔽低能射线,又能保证高能射线较高的出射率,能够满足野外现场能量色散 X射线荧光分析的需要。