碳纳米材料修饰阳极电极对微生物燃料电池传感器水体毒性检测灵敏度的影响

微生物燃料电池(Microbial fuel cell,MFC)传感器检测水体毒性灵敏度偏低是阻碍其实际应用的瓶颈之一。本研究利用多壁碳纳米管(MWNT)和导电炭黑(GCB)修饰石墨毡(GF),作为阳极电极启动MFC传感器。考察了碳纳米材料修饰阳极电极对MFC传感器电化学性能及水体毒性检测灵敏度的影响。结果表明,GCB和MWNT修饰的电极比未修饰的电极内阻小,MFC的功率输出由大到小的顺序为:GCB/GF-MFC(2.63 W/m~2)MWNT/GF-MFC(2.56 W/m~2)GF-MFC(2.09 W/m~2)。以3,5-二氯苯酚(DCP)作为模型毒物进行毒性检测实验,10 mg/L DCP对3个MFC毒性传感器的平均抑制率为:MWNT/GF-MFC(31.8%)GCB/GF-MFC(26.3%)GF-MFC(20.1%),碳纳米材料修饰阳极电极组装MFC的毒性检测灵敏度均有所提高,MWNT/GF-MFC灵敏度最高。本研究对MFC型传感器在水污染预警中的实际应用研究提供了参考。     

PPESK/PES共混物热性能及动态机械性能研究

采用熔融共混法制备了不同重量比例的新型含二氮杂萘酮结构聚芳醚砜酮(PPESK)与聚醚砜(PES)共混物.利用热失重(TGA)及动态热机械仪(DMTA)对该共混物的热性能及动态机械性能进行了研究.研究结果表明,在氮气氛围中,PPESK热分解分为两步反应进行,反应级数n=1,说明PPESK在氮气氛围中的热分解反应类型与β(升温速率)无关而与材料物性有关;采用Ozawa方法得出在15%热失重前,热分解活化能的平均值为240 kJ/mol;随着升温速率的提高,PPESK热降解速率有减缓趋势.在280℃以前,PPESK储能模量值随温度变化较小,保持在较高值,温度在280~330℃之间,储能模量值降低幅度突变.另外,PPESK中加入PES会降低其储能模量值及其热稳定性.     

侧链型偶氮聚合物液晶在不同温度条件下的光致取向

在高于和低于玻璃化转变温度 (Tg)的温度范围内 ,研究了聚甲基丙烯酸 ( 6 [4 ( 4 氰基偶氮苯 )苯氧基 ]己酯 ) (Poly( 6 [4 ( 4 cyanophenylazo)phenoxy]hexylmethacrylate) (PM6ABCN) )聚合物膜的光致取向行为 .实验结果表明 ,在温度低于Tg 时 ,实验温度对取向速率没有影响 ;高于Tg 温度时 ,取向的速率随温度升高而变大 ,取向过程的表观活化能为 3 2 76kJ mol.通过对Tg 温度以下的光致取向进行分析 ,对光致取向过程提出了一个新的微相模型 ,微相内的温度能够达到Tg 以上 ,而实验中控制的样品宏观温度不变 ;高于Tg 温度时的光致取向过程受到宏观温度的控制 ,其表观活化能远远小于热致的各向同性相I(Isotropicphase,I)到向列相N(Nematicphase,N)相转变表观活化能 ( 3 40 2kJ mol) ,表明光致取向过程对温度的依赖性较小     

Identifying the closeness of eigenstates in quantum many-body systems

We propose a quantity called modulus fidelity to measure the closeness of two quantum pure states. We use it to investigate the closeness of eigenstates in one-dimensional hard-core bosons. When the system is integrable, eigenstates close to their neighbor or not, which leads to a large fluctuation in the distribution of modulus fidelity. When the system becomes chaos, the fluctuation is reduced dramatically, which indicates all eigenstates become close to each other. It is also found that two kind of closeness, i.e., closeness of eigenstates and closeness of eigenvalues, are not correlated at integrability but correlated at chaos. We also propose that the closeness of eigenstates is the underlying mechanism of eigenstate thermalization hypothesis(ETH) which explains the thermalization in quantum many-body systems.     

衰荡光谱法测量OH自由基的理论研究

提出了一种用衰荡光谱法测量对流层OH自由基的新方法,并从理论上推 导出OH自由基浓度与衰荡时间的关系,讨论了该方法的可行性和灵敏度,分析了各种干扰因 素对测量的影响,认为该方法与传统测量OH自由基的方法相比优势较为明显。     

Active modulation of plasmonic signal with a subwavelength metal/nonlinear dielectric material/metal structure

<正>Light propagation through a metal/nonlinear dielectric material/metal(M-NL-M) structure is numerically studied.The design parameters of the M-NL-M structure are found with the waveguide theory so that the structure only supports the symmetric surface plasmon polaritons(SPP(0)) mode and the antisymmetric surface plasmon polaritons(SPP(1)) mode.The coupling between the two modes within the M-NL-M structure is exploited.Through controlling the propagation constants of the two modes with the intensity-dependent dielectric constant of the nonlinear Kerr material,an effective all-optical control of plasmonic signal modulator can be realized with this M-NL-M structure.     

左手性材料研究进展

综述了左手性材料的理论与实验研究方面取得的最新进展．采用电磁理论分析了左手性介质的基本性质；阐述了用左手性介质制作的平板透镜进行实现超衍射分辨率成像的机理；介绍了在人工构造左手性材料方面所取得的实验进展．     

用角谱方法分析固体浸没透镜的近场光场

固体浸没透镜在超高度近场光存储和超分辨率显微观测中具有独特的作用，本文利用角谱理论并计及光波的矢量特性，分析了固体浸没透镜的近场矢量光场特性，给出了它的光场图样，并着重讨论了线偏光入射条件下，出射光场的偏振状态。     

A low specific on-resistance SOI MOSFET with dual gates and recessed drain

A low specific on-resistance (R_on,sp) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R_on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R_on,sp of 4.151 mΩ·cm² (V_GS=15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R_on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes.     

All-Optical Switching Based on Azo Polymer Material

Conventional all-optical switches based on azo polymer films and the all-optical switches based on the attenuated total reflection （ATR） geometry are investigated. A conventional switch system, including a pump beam of 532 nm and a probe beam of 650 nm, is based on the photoinduced birefringence effect of azo polymer. An ATR switch in a prism-multilayer configuration is achieved by changing the reflectance of the probe beam with an external pump beam. The ATR method provides the substantial improvement of the speed and the efficiency of the modulation over the conventional method. Although the azo polymer response still remains relatively slow, an enhanced nonlinear refractive index of the azo polymer film can effectively increase the modulation.