涡轮端区离散台阶缝气膜冷却特性研究

受端区二次流的影响,叶片前缘和压力面根部角区端壁难以实现有效冷却。为了实现该区域的冷气覆盖,本文研究了新型冷却结构离散台阶缝的端区气膜冷却特性。离散台阶缝在叶片周向主要覆盖叶片前缘区域,能够集中冷气冷却换热恶劣的区域。本文研究了两种不同离散台阶缝轴向位置(AP1,AP2)和三种不同冷气量(MFR=0.43%,0.88%,1.33%),通过红外热像仪测量端区气膜冷却效率分布。结果表明,增加离散台阶缝与叶片的轴向距离,能够有效提高叶片上游区域的冷却效果,但在通道内部,结果相反。增加冷气量能够提高端壁的气膜冷却效果。此外,应用五孔探针测量叶栅通道喉部附近截面二次流流场特征,解释了通道冷却分布的机理。     

大型矩形铝冷屏研制

冷屏是加速器用低温恒温器重要的组件之一,大型恒温器采用铝制冷屏为安装调试提供了极大方便。本文阐述了加速器用低温恒温器大型铝冷屏的设计方法,详细介绍了冷屏的结构设计、热设计及数值模拟与计算,最后介绍了铝管与铝板的焊接结构设计,解决了铝管焊接在低温下容易产生低温冷漏的问题,为其它加速器低温恒温器冷屏设计和类似装置冷屏设计提供参考。     

激光诱导荧光法测量OH自由基中激光产生的OH自由基转动能级布居及其对测量的影响

对激光诱导荧光法测量对流层OH自由基时,激光与大气中的臭氧及水蒸气作用产生的OH自由基的转动态分布及其随时间的演化进行了研究,并对新生的OH自由基对荧光信号的干扰强度进行了讨论。     

频带色散法改善宽线宽激光受激布里渊散射效果的实验研究

利用频带色散法，让宽线宽，多横模电光调Q Cr:LiSAF激光输出脉经过多个色散棱镜，频带被色散后，再聚焦到装有CS2散射介质的池中，产生后向受激布里渊散射，脉宽的压缩率较大，约为5倍，与无色散棱镜情况相比，阈值能量有所降低，并能很有效改善抽运激光的光束质量。     

Super-Resolution Imaging on Microfluidic Super-Resolution Near-Field Structure

We present a new concept of the microfluidic super-resolution near-field structure (MSRENS) based on a microfluidic structure and a super-resolution near-field structure. The near-field distance control, “nano-probe” and scanning can be realized simultaneously using the MSRENS, which is similar to a near-field scanning optical microscope. The design and simulation results are presented. Numerical simulation has demonstrated that the MSRENS with spatial resolution beyond the diffraction limit could be applicable in chemistry, biologics, and many other fields.     

Numerical and experimental investigation of temperature effects on the surface plasmon resonance sensor

The effects of temperature on a surface plasmon studied experimentally and theoretically. SPR resonance （SPR） sensor in Kretschmann configuration are experiments are carried out over a temperature range of 278- 313 K in steps of 5 K. A detailed theoretical model is provided to analyze the variation of performance with varying temperature of the sensing environment. The temperature dependence of the properties of the metal, dielectric, and analyte are studied, respectively. The numerical results indicate that the predictions of the theoretical model are well consistent with the experiment data.     

A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

A high voltage( 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT) with a reduced cell-pitch is proposed.The LIGBT features multiple trenches(MTs):two oxide trenches in the drift region and a trench gate extended to the buried oxide(BOX).Firstly,the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si.Secondly,oxide trenches bring in multi-directional depletion,leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field(RESURF) effect.Both increase the breakdown voltage(BV).Thirdly,oxide trenches fold the drift region around the oxide trenches,leading to a reduced cell-pitch.Finally,the oxide trenches enhance the conductivity modulation,resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop(Von).The oxide trenches cause a low anode-cathode capacitance,which increases the switching speed and reduces the turn-off energy loss(Eoff).The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm,a Von of 1.03 V at 100 A/cm-2,a turn-off time of 250 ns and Eoff of 4.1×10?3 mJ.The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits,simplifying the fabrication processes.     

A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration

A low on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) n-channel lateral double-diffused metal-oxide-semiconductor(LDMOS) is proposed and its mechanism is investigated by simulation.The LDMOS has two features:the integration of a planar gate and an extended trench gate(double gates(DGs));and a buried P-layer in the N-drift region,which forms a triple reduced surface field(RESURF)(TR) structure.The triple RESURF not only modulates the electric field distribution,but also increases N-drift doping,resulting in a reduced specific on-resistance(Ron,sp) and an improved breakdown voltage(BV) in the off-state.The DGs form dual conduction channels and,moreover,the extended trench gate widens the vertical conduction area,both of which further reduce the Ron,sp.The BV and Ron,sp are 328 V and 8.8 m.cm2,respectively,for a DG TR metal-oxide-semiconductor field-effect transistor(MOSFET) by simulation.Compared with a conventional SOI LDMOS,a DG TR MOSFET with the same dimensional device parameters as those of the DG TR MOSFET reduces Ron,sp by 59% and increases BV by 6%.The extended trench gate synchronously acts as an isolation trench between the high-voltage device and low-voltage circuitry in a high-voltage integrated circuit,thereby saving the chip area and simplifying the fabrication processes.     

含甲氧基二氮杂萘酮结构类双酚单体的波谱表征

用核磁共振谱和质谱表征了4-（3-甲氧基-4-羟基苯基）-2,3-二氮杂萘-1-酮 (OO-DHPZ) ,对其结构的¹H和¹³Ｃ NMR谱的化学位移作了全归属.     

A Tapping—Mode Tuning Fork with a Short Fibre Probe Sensor for a Near—Field Scanning Optical Microscope

We report on a tapping-mode tuning fork with a short fibre probe sensor for a near-field scanning optical microscope.The method demonstrates how to fabricate the short fibre probe.This tapping-mode tuning fork with a short fibre probe can provide stable and high Q at the tapping frequency of the tuning fork,and can give high-quality near-field scanning optical microscope and atomic force microscope images of samples.We present the results of using the tapping-mode tuning fork with a short fibre probe sensor for a near-field scanning optical microscope performed on an eight-channel silica waveguide.