Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5~nm/5~nm) film deposition. The surface morphology of wafers and the current--voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes.     

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters,such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition,using an in-plane grazing incidence x-ray diffraction technique.The results are analysed and compared with a complementary out-of-plane xray diffraction technique.The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method.The method for directly determining the in-plane lattice parameters of the GaN layers is also presented.Combined with the biaxial strain model,it derives the lattice parameters corresponding to fully relaxed GaN films.The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established,reaching to a maximum level of-0.89 GPa.     

Time delay in InGaN multiple quantum well laser diodes at room temperature

This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes.The delay time decreases as the pumping current increases,and the speed of the delay time reduction becomes slower as the current amplitude increases further.Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire.It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action.The traps can be bleached by capturing injected carriers.The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes.     

硝基甲烷异构化反应势能面的ab initio研究

在B3LYP/6-311+ +G(2d,2p)水平上,优化得到硝基甲烷CH3NO2的10种异构体和23个异构化反应过渡态,并用G2MP2方法进行了单点能计算.根据计算得到的G2MP2相对能量,探讨了CH3NO2势能面上异构化反应的微观机理.研究表明,反应初始阶段的CH3NO2异构化过程具有较高的能垒,其中CH3NO2的两个主要异构化反应通道,即CH3NO2→CH3ONO和CH3NO2→CH2N(O)OH的活化能分别为270.3和267.8 kJ/mol,均高于CH3NO2的C-N键离解能.因而,从动力学角度考虑, CH3NO2的异构化反应较为不利.     

沉痛悼念国际著名电化学家——ErnestB.Yeager教授

国际著名化学家 ,理论电化学奠基人 ,美国ＣａｓｅＷｅｓｔｅｒｎＲｅｓｅｒｖｅ大学 (ＣＷＲＵ )ＥｒｎｅｓｔＢ .Ｙｅａｇｅｒ教授于 2 0 0 2年 3月 8日不幸逝世 ,享年 77岁 .科学巨星殒落 !学界为之悲恸 !Ｙｅａｇｅｒ教授是国际上公认的电化学界权威 ,一生都贡献给科学事业 ,他把毕生的精力用于探索电化学基本过程的本质 ,在他近 5 0年的科研生涯中共发表学术论文 2 70篇 ,编写专著2 0部 ,为后人留下了非常宝贵的知识财富 .Ｙｅａｇｅｒ教授是开发燃料电池的先驱 ,早在 1 976年于美国国家能源问题与自然资源保护会议上 ,他就预言今后电…     

酒石酸钠调控草酸钙晶体生长的SEM,XRD和FTIR研究

采用扫描电镜(SEM)、X射线衍射(XRD)和傅里叶红外光谱(FTIR)研究了凝胶体系中尿抑制剂酒石酸钠(Na₂tart)的浓度和结晶温度对草酸钙(CaOxa)晶体生长的影响。当Na₂tart浓度为0.01 mol·L-1时,体系中主要生成棱角尖锐的蔷薇花状一水草酸钙(COM)聚集体,二水草酸钙(COD)含量小于5％,此时XRD图谱上主要为归属于COM的(101),(020)和(202)晶面的衍射峰,FTIR光谱中COM晶体的羧基不对称伸缩振动ν_as(COO-)和对称伸缩振动ν_s(COO-)分别为1 618和1 317 cm-1。当Na₂tart浓度增加到0.10和0.50 mol·L-1时,COD百分含量分别增加至10％和50％,COM晶体的比表面积减小。COD含量增加后,XRD图谱上归属于COD的(200),(211),(411)和(213)晶面的衍射峰增强。环境温度的影响比浓度的影响更为显著。高温(＞47 ℃)有利于COM生成,而低温(＜27 ℃)有利于Na₂tart诱导COD。FTIR光谱中COD的ν_as(COO-)和ν_s(COO-)分别为1 647.6和1 327.7 cm-1。     

差分吸收光谱技术监测气溶胶消光系数的误差分析

给出了在利用差分吸收光谱技术监测大气气溶胶消光系数时确定测量误差的方法。分析了光源变化、探测器积分时间间隔、大气湍流、系统参数校正、测量系统位移以及粒子后向散射等可能对测量结果产生影响的因素,通过理论分析和实际测量确定气溶胶消光系数误差为0.03 km-1。     

单分子膜诱导下的矿物晶体生长

介绍了近几年单分子膜诱导下矿物晶体生长的最新进展。讨论了单分子膜诱导下的矿物晶体生长与溶溶中的异同,成膜材料,单分子膜性质和聚集态,矿物晶体的选择性及晶体的表征方法。     

单分子膜诱导下晶体生长中的晶格匹配

有机基质与无机晶体的晶格几何匹配是导致生物体内矿物有序生长并具有特殊理化性质的重要因素之一.作为模拟生物矿化的重要模板之一,Langmuir单分子膜具有独特的优势.本文综述了单分子膜诱导下CuSO4、Na2SO4、PbS、CdS、BaF2和CaF2等晶体生长过程中的晶格匹配,讨论了单分子膜亲水头基、膜的电荷性质、膜聚集态等因素对膜控晶体生长过程中晶格匹配的影响.指出了该领域所面临的问题和将来的发展方向.     

不同晶相草酸钙晶体的选区电子衍射和X射线衍射比较分析

在卵磷脂-水脂质体中制备了一水草酸钙(COM)、二水草酸钙(COD)和三水草酸钙(COT).并对它们分别进行了透射电镜(TEM)、选区电子衍射分析(SAED)和X射线衍射(XRD)分析.TEM结果表明,COM、COD和COT均为泡状,粒径约80～150nm.将SAED结果与XRD结果对比分析,发现将SAED图谱指标化后所得的衍射数据与XRD的特征峰值基本相符,但在相对强度上存在差别.本实验结果表明,将TEM、SAED和XRD技术联合分析纳米级草酸钙晶体,不但可以观察纳米级草酸钙的形貌,而且能对其晶相、单晶和多晶等进行深入的了解.