Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation

A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. On the one hand, when the radiation time is 5~min, the radiation intensity increases to 5.1~μ W/cm², while the saturation drain current (I_\rm dss) of the nanowire FET decreases sharply from 560 to 320~nA. The field effect mobility (μ ) of the ZnO nanowire FET drops from 50.17 to 23.82~cm²/(V.s) at V_\rm DS=2.5~V, and the channel resistivity of the FET increases by a factor of 2. On the other hand, when the radiation intensity is 2.5~μ W/cm^2 , the DC performance of the FET does not change significantly with irradiation time (its performances at irradiation times of 5 and 20~min are almost the same); in particular, the I_\rm dss of NW FET only reduces by about 50~nA. Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.     

混合萃取剂拆分氧氟沙星外消旋体

将混合萃取剂技术应用于氧氟沙星外消旋体的萃取分离,主要研究了氧氟沙星对映体在水和有机溶剂两相中的萃取分配行为。研究结果表明:在L-(-)-对甲基二苯甲酰酒石酸(L-DTTA)的浓度为0.18mol/L,L-(-)-二苯甲酰酒石酸(L-DBTA)的浓度为0.12mol/L,氧氟沙星浓度为0.2mg/mL,萃取温度为25℃,pH为7.00时,L型对映体和D型对映体的分配系数分别达到10.2和4.20,手性选择性达到2.43。     

ZnO和TiO2粒子的光催化活性及其失活与再生

 利用XRD，TEM，BET和UV－Vis等测试技术对商品的ZnO及TiO2和纳米ZnO及TiO2粒子进行了表征．无论是商品的还是纳米的，在光催化氧化降解气相n－C7H16和SO2及液相苯酚的反应中，TiO2均表现出比ZnO高的光催化活性，并从光腐蚀性和表面电荷两方面分析了其原因．在光催化氧化降解n－C7H16的反应中，ZnO粒子易失活，而TiO2粒子不易失活．但是，在光催化氧化降解SO2的反应中，ZnO和TiO2粒子均易失活．SPS和XPS测试结果表明，光催化剂表面的导电类型由反应前的n型变成了失活后的p型．这主要是由于反应产物发生吸附所致．失活后的光催化剂可以通过浸洗和干燥再生．     

InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate

A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph （EBL） technology is successfully developed and used to fabricate the 150 nm gate-length In0.7Ga0.3As/In0.52Al0.48As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T？gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics： the transconductance Gm, maximum saturation drain？to-source current IDSS, threshold voltage VT, maximum current gain frequency fT derived from h21, maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power？gain of metamorphic InGaAs/InAlAs high electron mobility transistors （HEMTs） are 470 mS/mm, 560 mA/mm, -1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications.     

A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer

A novel structure is proposed for doubling the vertical breakdown voltage of silicon-on-insulator(SOI) devices. In this new structure, the conventional buried oxide(BOX) in an SOI device is split into two sections: the source-section BOX and the drain-section BOX. A highly-doped Si layer, referred to as a non-depletion potential-clamped layer(NPCL), is positioned under and close to the two BOX sections. In the split BOXes and the Si region above the BOXes, the blocking voltage(BV) is divided into two parts by the NPCL. The voltage in the NPCL is clamped to be nearly half of the drain voltage. When the drain voltage approaches a breakdown value, the voltage sustained by the source-section BOX and the Si region under the source are nearly the same as the voltage sustained by the drain-section BOX and the Si region under the drain. The vertical BV is therefore almost doubled. The effectiveness of this new structure was verified for a P-channel SOI lateral double-diffused metal-oxide semiconductor(LDMOS) and can be applied to other high-voltage SOI devices. The simulation results show that the BV in an NPCL P-channel SOI LDMOS is improved by 55% and the specific on-resistance(Ron,sp) is reduced by 69% in comparison to the conventional structure.     

概率统计中的“直觉-逻辑-仿真”闭环教学法

在概率论与数理统计授课中,学员的直觉常常与课程结果发生冲突.应对该问题,本文设计了“直觉判断-逻辑推理-仿真验证”的层层递进和回路闭环的教学方法,借助问卷调查引导学员融入博弈角色,将抽象的理论变成易于理解的案例和视觉直观的图像.教学实践表明,闭环教学法能够帮助学员化解本课程的学习困难,进而提高学员的实践能力.该方法的教学效果在多个教学班和多次教学大赛中得到验证,值得推广.     

乙酰化呋喃型糖基三唑羧酸酯及硫苷的立体选择性合成

自从发现糖酯及硫苷类化合物具有抗菌、抗肿瘤等广泛的生理活性以来,有关这两类化合物的合成及其性质研究已成为人们极为关注的课题。但具有某些生理活性的三唑羧酸类和巯基嘧啶类化合物与糖基形成糖酯和硫苷的有关合成尚未见文献报道。为了寻找高效低毒的化合物,本文通过相转移催化法,在温和的反应条件下,立体专一性地合成了吡喃型     

类石墨烯硼-磷单层材料的电子与光学性能的第一性原理计算研究

基于第一性原理计算,对硼-磷单层材料的电子结构和光学性质进行系统地理论研究. 全局结构搜索和第一性原理分子动力学模拟现实二维硼-磷单层材料能量最低的结构与石墨烯类似,具有很高的稳定性. 类石墨烯二维硼-磷单层是直接带隙半导体,带隙宽度1.37 eV,其带隙宽度随层数增加而减少. 硼-磷单层的带隙宽度受外界应力影响.硼-磷单层的载流子迁移率达到106 cm2/V. MoS2/BP二维异质结可用于光电器件,其理论光电转换效率为17.7%?19.7%. 表明类石墨烯硼-磷二维材料在纳米电子器件与光电子器件的潜在应用价值.     

温度/pH敏感性嵌段共聚物P(HEMA-co-DEAEMA)-b-PDEAM-b-P(DEAEMA-co-HEMA)的合成与性质研究

利用原子转移自由基聚合方法(ATRP)合成了组成递变的嵌段共聚物P(HEMA-co-DEAEMA)-b-PDEAM-b- P(DEAEMA-co-HEMA). 用FTIR, ¹H NMR和GPC技术表征了聚合物的组成、结构、分子量及其分布. 通过透光率测定、粘度、激光粒度分析和透射电镜研究了共聚物组成、温度及溶液pH对其溶液相行为和胶束化作用的影响. 结果表明: 所合成的嵌段共聚物具有温度和pH敏感性, 共聚物水溶液的低临界溶解温度(LCST)随HEMA量的增加而降低, 临界相变pH随HEMA量的增加而降低, 温度和pH诱导均可实现嵌段共聚物的胶束化. 控制HEMA量可以调控嵌段共聚物的LCST和pK_a.     

增益饱和反射型量子点半导体光放大器高通特性

反射型量子点半导体光放大器(R-QDSOA)相较于传统RSOA具有皮秒级的载流子恢复速率和几十GHz的调制带宽,将其应用在高速的波分复用无源光网络(WDM-PON)中具有巨大的潜力.根据R-QDOSA的载流子速率方程和光场传输方程,建立了R-QDSOA的仿真模型,对其在增益饱和情况下的高通特性进行研究.研究结果表明:通过增加输入光功率、最大模式增益、有源区长度和减小注入电流,可提高最大信号增益和3dB截止频率;通过合理的参数设置,R-QDSOA的3dB截止频率可高达10GHz以上.该研究在无色WDM-PON的再调制方面展现了巨大的优势,并对提高R-QDSOA调制带宽具有理论指导意义.