新型锂离子电池三维结构泡沫NiO电极的制备及电化学性能

通过固相氧化方法,以三维结构泡沫镍为基体和金属镍源,制备了三维结构泡沫氧化镍负极。XRD和SEM结果表明,经500℃氧化处理,泡沫镍基体上形成了NiO微米级的致密活性氧化层。通过充放电测试和循环伏安测试研究了电极的电化学性能,结果表明,三维结构泡沫氧化镍在放电电位区间0.05～3.2VvsLi/Li+,0.2C倍率下充放电,初始容量损失为20%,且经40次循环后,质量比容量为950mAh·g-1,三维泡沫氧化镍电极具有优异的循环容量保持性能。三维泡沫氧化镍具有的大的活性表面积,降低了界面反应的极化,从而提高了NiO电极的倍率放电性能。     

Dislocation formation and twinning from the crack tip in Ni3Al: molecular dynamics simulations

The mechanism of low-temperature deformation in a fracture process of L12 Ni3Al is studied by molecular dynamic simulations.Owing to the unstable stacking energy,the [01ˉ1] superdislocation is dissociated into partial dislocations separated by a stacking fault.The simulation results show that when the crack speed is larger than a critical speed,the Shockley partial dislocations will break forth from both the crack tip and the vicinity of the crack tip;subsequently the super intrinsic stacking faults are formed in adjacent {111} planes,meanwhile the super extrinsic stacking faults and twinning also occur.Our simulation results suggest that at low temperatures the ductile fracture in L12 Ni3Al is accompanied by twinning,which is produced by super-intrinsic stacking faults formed in adjacent {111} planes.     

埋置量子点应力分布的有限元分析

通过衬底材料和外延材料的交替生长方式制备出多层排列的自组装量子点超晶格结构.这些埋置量子点的应力/应变场影响着它们的光电性能、压电性能以及力学稳定性.基于各向异性弹性理论的有限元方法,研究了埋置金字塔形应变自组织Ge/Si半导体量子点的应力/应变分布以及流体静应变和双轴应变分布,并与非埋置量子点的应力/应变分布做了比较,指出了它们之间的异同以及覆盖层对量子点应力/应变分布的影响. 关键词： 量子点 应力分布 应变分布     

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.